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Infineon Technologies IRF7306TR
- Part No.:
- IRF7306TR
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7306TR.pdf
- Description:
- MOSFET 2P-CH 30V 3.6A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,090
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Product details
Overview
IRF7306TR from Infineon Technologies (formerly International Rectifier) is a dual P-channel enhancement-mode MOSFET in SO-8 package, rated for -30 V VDS, 0.10 Ω RDS(on) at VGS = -10 V and ID = -1.8 A, with fast switching (tr = 17 ns, tf = 18 ns) and integrated body diodes. It is used in high-efficiency DC-DC load switches and dual-rail power management circuits.
For engineers reviewing the IRF7306TR datasheet, IRF7306TR pinout, IRF7306TR application, or IRF7306TR equivalent, key selection criteria include verified dual P-channel topology, SO-8 thermal performance (RθJA = 62.5 °C/W), -30 V breakdown rating, ultra-low on-resistance, and dynamic dv/dt robustness (-5.0 V/ns).
Technical Context
This dual P-channel MOSFET integrates two identical HEXFET cells in a single SO-8 leadframe-modified package optimized for thermal conduction and board-space efficiency. Each channel supports independent gate control, enabling synchronous buck high-side switching or complementary load switching without external level-shifting.
Its fifth-generation silicon features enhanced ruggedness against repetitive avalanche and fast diode recovery (trr = 53–80 ns, Qrr = 66–99 µC), making it suitable for hard-switched topologies where body-diode conduction occurs during dead-time intervals.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum reverse drain-source blocking voltage; defines safe operating range in negative-rail applications. |
| RDS(on) | 0.10 Ω @ VGS = -10 V, ID = -1.8 A - Enables <180 mW conduction loss per channel at 1.8 A, critical for thermally constrained PCBs. |
| ID (continuous) | -3.6 A @ TA = 25°C - Sustained current capability per channel under standard ambient conditions. |
| Qg | 25 nC - Total gate charge determines driver strength requirement; enables efficient 1 MHz-class switching with moderate gate drive. |
| tr/tf | 17 ns / 18 ns - Fast edge rates reduce switching losses and EMI generation in compact power stages. |
| dv/dt rating | -5.0 V/ns - Confirmed peak diode recovery dv/dt immunity; prevents spurious turn-on during high-slew transients. |
| TJ range | -55 to +150 °C - Supports operation in automotive under-hood and industrial motor-control environments. |
Pinout & Package
IRF7306TR uses the JEDEC MS-012AA-compliant SO-8 surface-mount package with exposed thermal pad (non-electrical). The modified leadframe enhances thermal dissipation and supports dual-die integration without die stacking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first P-MOSFET; requires negative VGS relative to source for turn-on. |
| 2 (S1) | Source of Channel 1 | Common source node for Channel 1; tied to negative rail or local ground reference in high-side switch configuration. |
| 3 (D1) | Drain of Channel 1 | Power output node for Channel 1; connects to load or inductor in buck/switching regulator stage. |
| 4 (D2) | Drain of Channel 2 | Power output node for Channel 2; enables dual-load or phase-split operation without additional packaging. |
| 5 (S2) | Source of Channel 2 | Common source node for Channel 2; may be tied to same rail as S1 or isolated for differential switching. |
| 6 (G2) | Gate of Channel 2 | Independent control input for second P-MOSFET; supports asynchronous or complementary gate timing. |
| 7, 8 | Thermal Pad / Source Tie | Internally connected to both S1 and S2; must be soldered to copper pour for RθJA ≤ 62.5 °C/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.10 Ω per channel at -10 V gate drive - reduces conduction loss by >35% vs. prior-gen P-channel SO-8 MOSFETs at 1.8 A. |
| Dual-channel integration | Two matched P-MOSFETs in one SO-8 - eliminates layout mismatch, halves footprint vs. discrete dual-device solutions. |
| Enhanced thermal leadframe | Custom SO-8 frame with internal thermal pad - achieves 2.0 W power dissipation on FR-4, exceeding standard SO-8 limits. |
| Fast body diode recovery | trr = 53 ns (typ), Qrr = 66 µC - minimizes reverse-recovery energy loss in synchronous rectification and half-bridge dead-time conduction. |
| Dynamic dv/dt immunity | -5.0 V/ns rated - ensures stable operation in noisy motor-drive or inverter applications without false triggering. |
Applications
| Load Switch for Dual-Rail Systems | High-Side Switch in Automotive Body Control |
|---|---|
Use Scenario: Independent ON/OFF control of two separate 12 V or 24 V subsystems (e.g., infotainment + lighting) from a common microcontroller with open-drain outputs. IC Role / Device Role / Timing Role: Dual P-channel load switch providing low-loss, logic-level-compatible power gating with integrated reverse-polarity protection. Use Value: Eliminates need for external level shifters or N-channel high-side drivers; RDS(on) ≤ 0.10 Ω ensures <360 mW total loss at 3 A combined load. | Use Scenario: Power distribution to door modules, seat controls, or mirror actuators in 12 V automotive systems requiring short-circuit and overtemperature protection. IC Role / Device Role / Timing Role: High-side power switch with built-in thermal shutdown margin and fast fault response via gate-controlled turn-off. Use Value: Withstands 150 °C junction temperature and supports 100 µs pulse overload per JEDEC SO-8 derating curves. |
| Synchronous Buck Converter Top-Switch | Redundant Power Path Selector |
Use Scenario: Upper switch in 3.3 V or 5 V point-of-load converters where low-side FET is N-channel and gate drive is bootstrap-based. IC Role / Device Role / Timing Role: Complementary high-side switch enabling zero-voltage switching transitions and minimizing shoot-through risk via matched RDS(on) and Qg. Use Value: 25 nC Qg and 17 ns tr allow clean 500 kHz–1 MHz operation with minimal gate-drive power overhead. | Use Scenario: Automatic failover between primary and backup 5 V supplies in telecom line cards or industrial PLC backplanes. IC Role / Device Role / Timing Role: OR-ing controller implemented using dual P-MOSFETs with independent gate bias to prevent backfeed and ensure seamless switchover. Use Value: Matched channel parameters guarantee balanced voltage drop (<5 mV difference at 2 A), eliminating circulating current and thermal imbalance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7851DP-T1-GE3 | VDS = -30 V, RDS(on) = 0.095 Ω @ -10 V but higher Qg = 32 nC; SO-8 with exposed drain pad. | Higher gate charge increases driver loss; better thermal resistance (RθJA = 50 °C/W) suits higher-power continuous use. | Select when thermal headroom is critical and gate drive strength allows extra 7 nC charge. |
| DMC3025LSD-13 | VDS = -30 V, RDS(on) = 0.032 Ω @ -10 V but only single-channel; requires two devices for dual function. | Lower on-resistance improves efficiency at >2 A, but doubles footprint and gate drive complexity. | Select when ultra-low conduction loss dominates over board area and component count. |
Compared with Si7851DP and DMC3025LSD, IRF7306TR offers optimal balance of dual-channel integration, proven SO-8 thermal reliability, and moderate gate charge-making it preferred for space-constrained, medium-current (>1.5 A/channel) applications where layout simplicity and supply-chain maturity matter.
Availability
IRF7306TR is available at Aetrix Electronics and suitable for automotive body electronics, industrial power distribution, and consumer DC-DC converter designs requiring stable component supply and long-lifecycle support.
Supply support for IRF7306TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive MCUs, and sensor solutions, with core expertise in silicon and wide-bandgap device physics.
The IRF7306TR belongs to Infineon's legacy HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-reliability discrete power switching in automotive, industrial, and computing power supplies.
FAQ
What is the maximum continuous drain current per channel at 70°C ambient?
The IRF7306TR supports -2.9 A continuous drain current per channel at TA = 70°C with standard FR-4 mounting and no forced airflow. This value derives directly from its 2.0 W power dissipation limit and 0.016 W/°C linear derating factor above 25°C ambient, confirmed in the Absolute Maximum Ratings table.
Can IRF7306TR be used in a synchronous rectifier configuration?
Yes - its fast body diode (trr = 53 ns typ, Qrr = 66 µC) and low RDS(on) make it suitable for synchronous rectification in low-voltage DC-DC converters. However, gate timing must ensure the P-channel is turned on only after the inductor current reverses, avoiding cross-conduction with the main switch.
Is the thermal pad electrically isolated?
No - pins 7 and 8 (the thermal pad) are internally connected to both source terminals (S1 and S2). It must be soldered to a common source-plane copper pour and cannot be used as an isolated heat sink. This connection is explicitly shown in the SO-8 outline and confirmed in the device's internal construction diagram.
Does IRF7306TR support logic-level gate drive?
It operates with VGS = -4.5 V, delivering RDS(on) = 0.16 Ω - sufficient for many 3.3 V logic-driven applications. However, full specification (0.10 Ω) requires -10 V gate drive; designers should verify voltage margin and worst-case RDS(on) at system minimum VGS across temperature and tolerance.
IRF7306TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 1.8A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 440pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7306TR FAQ
1.How can I place an order for IRF7306TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7306TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7306TR reliable?
The price and inventory of IRF7306TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7306TR is usually 5 days.
3.What payment methods are accepted for IRF7306TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7306TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7306TR?
IRF7306TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7306TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7306TR?
For technical support, including IRF7306TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7306TR requirements.
6.How does Aetrix verify that IRF7306TR is sourced from the original manufacturer or authorized distributors?
All IRF7306TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7306TR meets industry standards.
7.What is the process for return or replacement of IRF7306TR?
All IRF7306TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7306TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7306TR part is unused and in its original packaging.
Return procedure for IRF7306TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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