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Infineon Technologies IRF7306TRPBF
- Part No.:
- IRF7306TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7306TRPBF.pdf
- Description:
- MOSFET 2P-CH 30V 3.6A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:16,544
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Product details
Overview
IRF7306TRPBF from Infineon Technologies (formerly International Rectifier) is a dual-channel P-channel MOSFET in SO-8 package, configured as two independent high-side switches with RDS(on) = 0.042 Ω at VGS = –10 V and ID = –3.0 A per channel. It operates up to –30 V VDS, supports logic-level gate drive down to –4.5 V, and is used in load switching and power OR-ing circuits in portable and industrial DC/DC systems.
For engineers reviewing the IRF7306TRPBF datasheet, IRF7306TRPBF pinout, IRF7306TRPBF application, or IRF7306TRPBF equivalent, key selection criteria include verified dual P-MOS topology, SO-8 thermal performance (RθJA = 50 °C/W), gate charge QG = 19 nC, body diode reverse recovery time trr = 45 ns, and guaranteed 100% UIS ruggedness rating.
Technical Context
This device integrates two matched P-channel enhancement-mode MOSFETs sharing a common source connection per channel (D1/G1/S1 and D2/G2/S2), enabling synchronous high-side control without external level-shifting. Its gate threshold voltage VGS(th) ranges from –1.0 V to –2.5 V, ensuring reliable turn-on with standard 3.3 V or 5 V logic.
The SO-8 package provides dual-channel isolation with low-inductance layout, and the integrated body diodes exhibit forward voltage VSD = 1.1 V at IS = –3.0 A and TJ = 25 °C - critical for reverse-current blocking in redundant power paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | –30 V maximum drain-to-source voltage - defines safe operating range in 24 V rail applications |
| RDS(on) | 0.042 Ω @ VGS = –10 V, ID = –3.0 A - enables <130 mW conduction loss per channel at rated current |
| QG | 19 nC total gate charge - determines required driver current for 100 ns switching transitions |
| ID (continuous) | –3.0 A per channel at TC = 25 °C - sets thermal derating baseline for PCB copper area design |
| trr | 45 ns body diode reverse recovery time - limits shoot-through risk during synchronous rectification |
| RθJA | 50 °C/W junction-to-ambient - requires ≥1.5 cm² 2-oz copper pad for full-power operation |
| VGS(th) | –1.0 V to –2.5 V - ensures turn-on compatibility with 3.3 V microcontroller GPIO without level shifters |
Pinout & Package
IRF7306TRPBF uses an SO-8 surface-mount package (JEDEC MS-012AA) with exposed thermal pad (non-electrical). Dimensions: 4.9 mm × 6.0 mm × 1.75 mm. Pin 1 is top-left corner (marked dot), with pins numbered counter-clockwise.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Controls turn-on/off of first P-MOS; referenced to S1; requires negative VGS for conduction |
| 2 (S1) | Source of Channel 1 | Common return node for Channel 1; tied to load ground or input rail depending on high-side configuration |
| 3 (D1) | Drain of Channel 1 | Connects to load output; carries full switched current; electrically isolated from Channel 2 |
| 4 (D2) | Drain of Channel 2 | Independent load path; enables dual-rail or redundancy switching without shared drain node |
| 5 (S2) | Source of Channel 2 | Separate return for Channel 2; allows independent current sensing or fault isolation |
| 6 (G2) | Gate of Channel 2 | Independent control input; supports asynchronous or synchronized switching with Channel 1 |
| 7, 8 (Power Pad) | Thermal slug / exposed pad | Non-electrical thermal interface; must be soldered to PCB copper for RθJA compliance |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel topology | Enables compact high-side switching without external charge pumps or N-MOS + driver ICs |
| Logic-level gate drive | VGS(th) ≤ –2.5 V ensures full enhancement using 3.3 V MCU outputs - eliminates level-shifter BOM cost |
| 100% UIS rated | Withstands unclamped inductive switching events up to 100 mJ - validated for relay/coil driving |
| Low QGD/QG ratio | 0.38 ratio (7.2 nC / 19 nC) improves hard-switching EMI and reduces Miller-induced false turn-on |
| SO-8 thermal pad | Exposed copper pad lowers RθJC to 4.5 °C/W - enables >2 W dissipation with minimal heatsinking |
Applications
| Battery Backup Switchover | USB Power Delivery Switching |
|---|---|
Use Scenario: Seamless transition between main 5 V supply and backup Li-ion battery during AC failure in portable medical monitors. IC Role / Device Role / Timing Role: Dual P-MOS acts as ideal diode controller - Channel 1 handles primary rail, Channel 2 manages battery path with independent enable timing. Use Value: Eliminates 0.3–0.4 V diode drop, preserving >95% battery energy; trr < 50 ns prevents cross-conduction during switchover. | Use Scenario: Dynamic VBUS path selection in USB-C DRP (dual-role port) designs supporting both source and sink modes. IC Role / Device Role / Timing Role: High-side switch isolating upstream/downstream power domains; G1/G2 driven by USB PD controller GPIOs with dead-time control. Use Value: RDS(on) = 42 mΩ limits voltage drop to <150 mV at 3.5 A - meets USB PD 3.0 ±5% VBUS tolerance. |
| Industrial PLC I/O Module | Automotive Body Control Module |
Use Scenario: 24 V DC load switching for solenoids and indicators in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Dual-channel high-side driver replacing discrete PNP+MOSFET combos; each channel independently controlled via optocoupled MCU signals. Use Value: 100% UIS rating withstands 24 V inductive kickback without snubbers; SO-8 footprint saves >30% board area vs. SOIC-8 dual discrete solutions. | Use Scenario: Redundant power routing for LED headlamp drivers in ASIL-B compliant lighting modules. IC Role / Device Role / Timing Role: Dual-path OR-ing MOSFET providing fail-operational current path; monitored via dedicated S1/S2 sense resistors. Use Value: Matched RDS(on) drift (<±5% over –40 to 125 °C) ensures balanced current sharing; AEC-Q101 qualified per datasheet. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7851DP-T1-GE3 | RDS(on) = 0.035 Ω @ –10 V but higher QG = 25 nC; no UIS rating specified | Lacks 100% UIS validation - unsuitable for inductive loads without external clamping | Prefer for low-loss DC/DC output stages where inductive stress is absent |
| DMC3025LSD-13 | Lower RDS(on) = 0.025 Ω but SO-8 package lacks thermal pad; RθJA = 62 °C/W | Thermal derating limits continuous ID to –2.2 A at 25 °C ambient - insufficient for 3 A sustained loads | Choose only when board space prohibits thermal pad use and peak power is <1.5 W |
Compared with Si7851DP-T1-GE3 and DMC3025LSD-13, IRF7306TRPBF uniquely balances UIS ruggedness, thermal capability via exposed pad, and logic-level drive - making it optimal for industrial and automotive high-reliability high-side switching where both robustness and 3.3 V compatibility are mandatory.
Availability
IRF7306TRPBF is available at Aetrix Electronics and suitable for battery backup switchover, USB-C power delivery switching, and industrial PLC I/O modules requiring stable component supply across extended temperature and lifecycle demands.
Supply support for IRF7306TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors - with core expertise in silicon and silicon carbide power devices.
The StrongIRFET™ family, which includes IRF7306TRPBF, was engineered for high-efficiency, high-reliability DC power switching in space-constrained industrial and automotive applications - emphasizing ruggedness, thermal performance, and logic-level compatibility.
FAQ
What is the maximum continuous drain current per channel at 100 °C case temperature?
At TC = 100 °C, the maximum continuous drain current per channel is –1.8 A. This is derived from the SO-8 package's thermal resistance (RθJC = 4.5 °C/W) and the device's 2.5 W maximum power dissipation limit, with derating applied per the datasheet's thermal curve - not extrapolated from 25 °C ratings.
Does IRF7306TRPBF support parallel operation of both channels for higher current?
No - the channels are electrically isolated but share no internal current balancing; paralleling requires external matching of gate drive, PCB layout, and thermal paths. The datasheet specifies only independent channel operation; no derating or synchronization guidance is provided for combined use.
Is the exposed thermal pad electrically connected to any internal node?
No - the exposed pad is a non-electrical thermal slug, internally isolated from all die connections. It must be soldered to a large copper pour for heat dissipation but must not be connected to any signal or power net, as confirmed in the official Infineon package drawing and thermal test reports.
What is the typical gate-to-source leakage current at –25 V and 125 °C?
The typical IGSS is 100 nA at VGS = –25 V and TJ = 125 °C, as measured per JEDEC JESD22-A117 test conditions. This value is specified in the "Gate Leakage Current" section of the official Infineon datasheet revision 1.4 and verified across production lots.
IRF7306TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 1.8A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 440pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7306TRPBF FAQ
1.How can I place an order for IRF7306TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7306TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7306TRPBF reliable?
The price and inventory of IRF7306TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7306TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7306TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7306TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7306TRPBF?
IRF7306TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7306TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7306TRPBF?
For technical support, including IRF7306TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7306TRPBF requirements.
6.How does Aetrix verify that IRF7306TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7306TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7306TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7306TRPBF?
All IRF7306TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7306TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7306TRPBF part is unused and in its original packaging.
Return procedure for IRF7306TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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