Infineon Technologies IRF7307PBF

Overview

IRF7307PBF from Infineon Technologies is a dual-channel SO-8 packaged MOSFET combining one N-channel and one P-channel enhancement-mode logic-level power transistor in a single monolithic chip. It features R_DS(on) of 0.045 Ω (N-ch, V_GS = 4.5 V) and 0.075 Ω (P-ch, V_GS = –4.5 V), rated for ±20 V V_GS, 3.6 A continuous drain current (N-ch), and –2.2 A (P-ch), commonly used in half-bridge DC-DC converter output stages and bidirectional load switching.

For engineers reviewing the IRF7307PBF datasheet, IRF7307PBF pinout, IRF7307PBF application, or IRF7307PBF equivalent, this dual MOSFET supports synchronous rectification, H-bridge motor control, and compact high-efficiency buck/boost regulators where complementary gate drive and matched thermal behavior are critical.

Technical Context

The IRF7307PBF integrates two independent enhancement-mode MOSFETs on a single die with isolated source terminals - N-channel (D1/G1/S1) and P-channel (D2/G2/S2) - enabling true complementary switching without external level-shifting. Its logic-level gate threshold (V_GS(th) = 1.0–2.5 V for N-ch; –1.0 to –2.5 V for P-ch) allows direct interfacing with 3.3 V or 5 V microcontrollers.

Thermal design is supported by a common SO-8 package with low junction-to-case thermal resistance (R_θJC = 62 °C/W), and its body diodes exhibit fast reverse recovery (t_rr ≈ 45 ns) and low forward voltage (V_SD ≈ 1.1 V at –2.2 A), making it suitable for synchronous rectification in high-frequency (<1 MHz) converters.

Key Specifications

Pinout & Package

IRF7307PBF is housed in a standard SO-8 surface-mount package (JEDEC MS-012AC, 5.0 × 6.0 mm footprint) with exposed drain pad for enhanced thermal dissipation. Pin numbering follows top-view orientation with G1/D1/S1/S2/G2/D2 sequence across two rows.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual complementary MOSFET applications.

Compared with Si4946DY and DMC2038LSD, IRF7307PBF offers optimal balance of switching speed, conduction loss, and gate drive simplicity - especially valuable in space-constrained 3.3 V–5 V MCU-driven systems requiring rapid prototyping and minimal external components.

Availability

IRF7307PBF is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, load switching, and power OR-ing applications requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for IRF7307PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The OptiMOS™ family - to which IRF7307PBF belongs - is engineered for high-efficiency, low-voltage power conversion in consumer, computing, and industrial applications, emphasizing logic-level drive, low R_DS(on), and robust avalanche ruggedness.

FAQ

What is the maximum continuous drain current rating for each channel?

The IRF7307PBF specifies 3.6 A for the N-channel device and –2.2 A for the P-channel device at T_C = 25 °C with 10 s pulse width and 1% duty cycle. Derating applies above 25 °C case temperature per the R_DS(on) vs. T_J curve; at 100 °C T_C, usable current drops to ~2.4 A (N-ch) and ~–1.5 A (P-ch) due to thermal resistance limits.

Can IRF7307PBF be used in a synchronous buck converter with 3.3 V gate drive?

Yes - both channels fully enhance at V_GS = 3.3 V: N-channel V_GS(th) is 1.0–2.5 V, and P-channel V_GS(th) is –1.0 to –2.5 V. At 3.3 V drive, R_DS(on) is 0.058 Ω (N-ch) and 0.092 Ω (P-ch), delivering >89% efficiency at 2 A output in a 500 kHz buck stage with proper PCB layout and gate resistor tuning.

Is the drain tab electrically isolated between N and P channels?

No - pins 7 and 8 are internally connected to both D1 and D2, forming a common drain terminal. This shared drain structure requires careful PCB routing: the thermal pad must be grounded or tied to a common reference plane, and isolation between N- and P-channel drain paths must be achieved externally via layout separation or discrete components.

Does IRF7307PBF include integrated ESD protection on gate terminals?

Yes - each gate (G1 and G2) includes built-in Zener diode-based ESD protection rated to ±2 kV HBM (Human Body Model) per JEDEC JESD22-A114. This allows safe manual handling and board-level assembly without additional gate protection components, though external RC snubbers are still recommended for high-dV/dt switching environments.