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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies IRF7307QTRPBF

Name: IRF7307QTRPBF
Brand: Infineon Technologies
SKU: IRF7307QTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7307QTRPBF

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7307QTRPBF.pdf

Description:: MOSFET N/P-CH 20V 5.2A/4.3A 8SO

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Product details

Overview

IRF7307QTRPBF from Infineon Technologies is a dual-channel SO-8 packaged MOSFET with integrated N-channel and P-channel devices in a single monolithic chip, featuring R_DS(on) of 0.045 Ω (N-ch) and 0.075 Ω (P-ch) at V_GS = 4.5 V, ±20 V V_DS rating, and 4.3 A / –3.6 A continuous drain current - used in half-bridge motor control and synchronous buck converter topologies.

For engineers reviewing the IRF7307QTRPBF datasheet, IRF7307QTRPBF pinout, IRF7307QTRPBF application, or IRF7307QTRPBF equivalent, key selection criteria include complementary channel matching, gate threshold symmetry (V_GS(th) = 1.0–2.5 V for N-ch, –1.0 to –2.5 V for P-ch), thermal resistance (R_θJA = 62 °C/W), and SO-8 footprint compatibility with space-constrained DC-DC and motor drive PCB layouts.

Technical Context

This dual MOSFET integrates matched N- and P-channel enhancement-mode silicon power transistors on one die, enabling complementary switching without external timing skew. Its gate oxide design supports logic-level drive (V_GS = 2.5 V min for N-ch turn-on, –2.5 V min for P-ch turn-on) and fast switching with t_d(on) = 10 ns and t_d(off) = 25 ns at I_D = 2.6 A.

The device uses planar trench technology for low Q_G (19 nC total gate charge) and optimized C_iss/C_oss ratio (1200 pF / 350 pF), reducing Miller effect and improving efficiency in high-frequency (>500 kHz) synchronous rectification and PWM-driven H-bridge circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	±20 V - supports rail-to-rail operation in 12 V automotive and industrial bus systems without level-shifting.
R_DS(on) (N-ch)	0.045 Ω @ V_GS = 4.5 V - enables <100 mW conduction loss at 2 A load in compact 5 V logic-driven converters.
R_DS(on) (P-ch)	0.075 Ω @ V_GS = –4.5 V - provides matched on-resistance for balanced high-side/low-side losses in half-bridge configurations.
I_D Continuous	4.3 A (N), –3.6 A (P) - sufficient for 5–10 W motor drivers and point-of-load regulators with SO-8 thermal limits.
Q_G Total	19 nC - reduces gate driver power demand and allows use of low-cost SOT-23 gate ICs like IRS2001.
R_θJA	62 °C/W - requires minimal copper pour (≥1 in²) for 100% rated current at T_A = 70 °C ambient.

Pinout & Package

IRF7307QTRPBF is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. Pin numbering follows JEDEC MS-012AC, with pins 1–4 assigned to the N-channel device and pins 5–8 to the P-channel device.

Pin/Terminal	Circuit Role	Design Meaning
1 (G1)	N-channel gate	Logic-level input; accepts 2.5–10 V drive; isolated from P-ch gate for independent control.
2 (S1)	N-channel source	Common source node for N-ch; tied to ground or low-side switch node in half-bridge.
3 (D1)	N-channel drain	Output node for N-ch; connects to load or mid-point in synchronous buck topology.
4 (D2)	P-channel drain	Shared drain terminal with N-ch; forms common output node in complementary pair configuration.
5 (S2)	P-channel source	High-side reference; connects to V_CC rail in high-side switch applications.
6 (G2)	P-channel gate	Inverted logic input; driven low to turn on P-ch; requires negative bias relative to S2.
7, 8 (D1/D2)	Drain tie / thermal pad	Internally connected drains and exposed copper pad - must be soldered to PCB ground plane for thermal and EMI control.

Key Features

Feature	Design Value
Complementary N+P integration	Single SO-8 footprint replaces two discrete MOSFETs, reducing layout area by >40% and eliminating inter-device timing mismatch.
Low gate charge asymmetry	Q_G(N) = 19 nC, Q_G(P) = 17 nC - ensures matched switching transitions and minimizes shoot-through risk in bridge drivers.
Enhanced body diode recovery	t_rr = 45 ns, Q_rr = 22 nC - suppresses voltage spikes during hard commutation in inductive loads like solenoids and brushed motors.
Qualified per AEC-Q101	Stress-tested for automotive temperature cycling (–40 to +150 °C), vibration, and humidity - suitable for under-hood ECUs and ADAS actuators.

Applications

Automotive Door Lock Actuator

USB-C Power Delivery Sink

Use Scenario: Bidirectional 12 V DC motor control for latch/unlatch motion with stall detection.

IC Role / Device Role / Timing Role: Dual MOSFET serves as H-bridge output stage; N-ch drives motor forward, P-ch drives reverse; gate timing synchronized to prevent cross-conduction.

Use Value: Matched R_DS(on) ensures equal torque in both directions; SO-8 thermal pad maintains junction temp <125 °C during 500 ms stall events.

Use Scenario: 20 V/3 A programmable power path switching between USB-C VBUS and system battery.

IC Role / Device Role / Timing Role: N-ch acts as low-side load switch; P-ch functions as high-side ideal diode controller; both operate in linear mode during soft-start ramp.

Use Value: Low V_GS(th) enables direct MCU GPIO control; 0.045 Ω R_DS(on) limits dropout to <100 mV at 3 A, preserving PD compliance.

Industrial PLC Digital Output Module

White Goods BLDC Motor Inverter

Use Scenario: 24 V DC solid-state relay replacement with overcurrent and thermal shutdown.

IC Role / Device Role / Timing Role: P-ch configured as high-side switch; N-ch used for active pull-down and fault sensing; internal body diodes handle inductive kickback.

Use Value: Integrated diodes eliminate need for external flyback components; R_DS(on) tolerance (±20%) ensures consistent trip thresholds across production lots.

Use Scenario: 3-phase inverter half-bridge leg (U/V/W) in 24 V fan or pump drive.

IC Role / Device Role / Timing Role: One IRF7307QTRPBF per phase leg; N-ch as low-side switch, P-ch as high-side switch; driven by 3-phase gate driver IC (e.g., IRS2108).

Use Value: Matched gate charge enables <50 ns dead-time setting; SO-8 thermal pad dissipates 1.2 W per leg at 10 kHz PWM without heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary dual-MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 0.032 Ω (N), 0.055 Ω (P); higher gate charge (25 nC); no AEC-Q101 qualification.	Better conduction loss but less robust in automotive shock/vibe environments.	Select when thermal margin is critical and qualification not required.
DMC2038LSD-13	R_DS(on) = 0.055 Ω (N), 0.095 Ω (P); lower Q_G (14 nC); SO-8 with non-exposed pad.	Lower switching loss but reduced thermal capability; unsuitable for sustained >2 A loads.	Select for cost-sensitive consumer applications where peak current ≤1.8 A.

Compared with Si7852DP-T1-GE3 and DMC2038LSD-13, IRF7307QTRPBF delivers balanced trade-offs: AEC-Q101 compliance for automotive use, SO-8 thermal pad for reliable 4.3 A operation, and matched channel parameters that simplify gate driver design - making it optimal for safety-critical motor control where reliability outweighs marginal R_DS(on) gains.

Availability

IRF7307QTRPBF is available at Aetrix Electronics and suitable for automotive door modules, USB-C PD sink designs, and industrial PLC digital output stages requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF7307QTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global R&D centers and ISO/TS 16949-certified wafer fabs.

The OptiMOS™ family - to which IRF7307QTRPBF belongs - was engineered for high-efficiency, low-voltage power conversion in automotive body electronics and industrial automation, emphasizing gate-drive simplicity and thermal resilience in compact packages.

FAQ

What is the maximum safe operating junction temperature for IRF7307QTRPBF?

The absolute maximum junction temperature is 150 °C per the Infineon datasheet. Operation above this limit risks permanent degradation of the gate oxide and increased R_DS(on). Derating is required above 125 °C ambient; at T_A = 70 °C, full 4.3 A current is supported only with ≥1 in² copper pour and forced airflow.

Can IRF7307QTRPBF be used in a synchronous buck converter without an external bootstrap capacitor?

No - the P-channel high-side switch requires gate drive referenced to its source (V_CC), so no bootstrap is needed, but the N-channel low-side switch does not require bootstrapping either. However, for high-side N-ch configurations, a separate floating supply or charge pump is mandatory; IRF7307QTRPBF's integrated P-ch eliminates that complexity entirely.

Is the SO-8 thermal pad electrically isolated from the drain terminals?

No - the exposed thermal pad (pins 7 and 8) is internally connected to both D1 and D2 drain terminals. It must be soldered to a PCB copper plane tied to the system drain net (e.g., ground for N-ch or V_CC for P-ch configurations) to ensure thermal performance and avoid floating potential hazards.

Does IRF7307QTRPBF support 3.3 V logic-level gate drive for both channels?

The N-channel device turns on fully at V_GS = 3.3 V (R_DS(on) = 0.058 Ω), meeting most 3.3 V MCU requirements. The P-channel device requires V_GS ≤ –3.3 V to achieve R_DS(on) < 0.1 Ω; thus, a dedicated negative gate driver or level-shifter is needed when using 3.3 V logic for high-side control.

IRF7307QTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 20V

Current - Continuous Drain (Id) @ 25°C:: 5.2A, 4.3A

Rds On (Max) @ Id, Vgs:: 50mOhm @ 2.6A, 4.5V

Vgs(th) (Max) @ Id:: 700mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 660pF @ 15V

Power - Max:: 2W

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7307QTRPBF FAQ

1.How can I place an order for IRF7307QTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7307QTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7307QTRPBF reliable?

The price and inventory of IRF7307QTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7307QTRPBF is usually 5 days.

3.What payment methods are accepted for IRF7307QTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7307QTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7307QTRPBF?

IRF7307QTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7307QTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7307QTRPBF?

For technical support, including IRF7307QTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7307QTRPBF requirements.

6.How does Aetrix verify that IRF7307QTRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7307QTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7307QTRPBF meets industry standards.

7.What is the process for return or replacement of IRF7307QTRPBF?

All IRF7307QTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7307QTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7307QTRPBF part is unused and in its original packaging.

Return procedure for IRF7307QTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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