My Inquiry
My Account
Infineon Technologies IRF7309PBF
- Part No.:
- IRF7309PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7309PBF.pdf
- Description:
- MOSFET N/P-CH 30V 4A/3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,196
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF7309PBF from Infineon Technologies is a dual-channel logic-level MOSFET pair featuring one P-channel and one N-channel enhancement-mode device in a single SO-8 package. It has RDS(on) of 0.045 Ω (N-ch, VGS = 4.5 V) and 0.075 Ω (P-ch, VGS = –4.5 V), 30 V VDSS/VDS, and ±20 V gate voltage rating - used in synchronous buck converters and H-bridge motor drivers.
For engineers reviewing the IRF7309PBF datasheet, IRF7309PBF pinout, IRF7309PBF application, or IRF7309PBF equivalent, key selection criteria include complementary channel pairing, low gate threshold compatibility with 3.3 V/5 V logic, thermal performance in dual-FET configurations, and SO-8 footprint suitability for high-density DC-DC power stages.
Technical Context
This device integrates matched N- and P-channel MOSFETs on a single die substrate to minimize propagation delay mismatch and improve switching synchronization in half-bridge topologies. Its gate thresholds (VGS(th) = 1.0–2.5 V for N-ch; –1.0 to –2.5 V for P-ch) enable direct drive from standard logic outputs without level-shifting circuitry.
The SO-8 package provides shared source terminals (pins 3 & 5) and independent drain connections (pins 1,2,7,8), supporting common-source or common-drain configurations. Thermal resistance (RθJA = 50 °C/W) is specified under JEDEC-standard PCB layout conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS / VDS | 30 V - supports input rails up to 24 V nominal systems with margin for transients |
| RDS(on) (N-ch, 4.5 V) | 0.045 Ω - enables <1 W conduction loss at 4.7 A continuous drain current |
| RDS(on) (P-ch, –4.5 V) | 0.075 Ω - balances conduction loss against gate drive capability in high-side switch position |
| Qg (N-ch) | 12 nC - determines minimum gate driver current needed for <100 ns turn-on in 500 kHz switching |
| Qg (P-ch) | 15 nC - requires symmetrical gate drive design to match N-ch timing in bridge applications |
| ID (continuous) | 4.7 A (N-ch), –4.2 A (P-ch) - defines maximum steady-state load current per channel at TA = 25 °C |
Pinout & Package
IRF7309PBF uses an SO-8 surface-mount package with exposed drain pad for thermal enhancement. Pin numbering follows standard SOIC-8 convention (pin 1 = N-ch drain, pin 2 = N-ch source, pin 3 = common source, pin 4 = N-ch gate, pin 5 = common source, pin 6 = P-ch gate, pin 7 = P-ch source, pin 8 = P-ch drain).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | N-channel drain | Primary current path for low-side switch; connects to output node in buck converter |
| Pins 2 & 3 | N-channel source / common source | Shared source node between channels; forms return path for both FETs in half-bridge |
| Pin 4 | N-channel gate | Control input referenced to N-ch source; driven by low-side gate driver |
| Pins 5 & 7 | Common source / P-channel source | Same net as pins 2 & 3; enables common-source configuration for synchronous rectification |
| Pin 6 | P-channel gate | Control input referenced to P-ch source; requires level-shifted or floating drive in high-side position |
| Pin 8 | P-channel drain | Primary current path for high-side switch; connects to input rail in buck converter |
Key Features
| Feature | Design Value |
|---|---|
| Complementary N+P channel pairing | Enables compact half-bridge implementation without discrete matching or layout skew |
| Logic-level gate drive (±2.5 V VGS(th)) | Allows direct interface with 3.3 V microcontrollers and PWM controllers without external level shifters |
| Low RDS(on) asymmetry (0.045 Ω / 0.075 Ω) | Reduces conduction loss imbalance in synchronous rectification, improving efficiency above 85% |
| SO-8 with exposed drain pad | Provides 50 °C/W junction-to-ambient thermal resistance under JEDEC 2S2P layout, enabling 2.5 W dissipation |
Applications
| DC-DC Synchronous Buck Converter | Brushed DC Motor H-Bridge Driver |
|---|---|
Use Scenario: Step-down voltage conversion in portable industrial sensors with 12 V input and 3.3 V output. IC Role / Device Role / Timing Role: Dual-FET power stage where N-ch handles low-side switching and P-ch serves as high-side switch with bootstrap-free operation. Use Value: Eliminates external bootstrap capacitor and diode, reducing BOM count by two components while maintaining >92% peak efficiency at 1 A load. | Use Scenario: Bidirectional control of 12 V, 2 A brushed motor in automated valve actuators. IC Role / Device Role / Timing Role: Complementary half-bridge providing forward/reverse polarity reversal via coordinated gate timing. Use Value: Matches channel RDS(on) within 1.7× ratio, minimizing shoot-through risk and enabling <500 ns dead-time setting without cross-conduction. |
| USB-Powered Load Switch | LED Backlight Dimming Circuit |
Use Scenario: Controlled 5 V power delivery to USB peripheral modules with inrush current limiting. IC Role / Device Role / Timing Role: P-ch high-side switch (pin 8→input, pin 7→load) with N-ch used for active gate discharge during turn-off. Use Value: Achieves <10 µs turn-off time using N-ch to sink P-ch gate charge, meeting USB 2.0 hot-plug response requirements. | Use Scenario: PWM dimming of 24 V LED strings in commercial signage with constant-current regulation. IC Role / Device Role / Timing Role: N-ch low-side switch modulating LED cathode current; P-ch unused or configured as overvoltage clamp. Use Value: Leverages 0.045 Ω RDS(on) to limit I2R loss to <200 mW at 2 A, enabling passive heatsink-free design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 0.028 Ω (N), 0.052 Ω (P); higher Qg (18/22 nC); SO-8 package | Better conduction loss but slower switching; requires stronger gate driver for same frequency | Prefer when efficiency >94% is critical and switching frequency ≤300 kHz |
| DMC2038LSD-13 | RDS(on) = 0.055 Ω (N), 0.085 Ω (P); lower Qg (9/11 nC); same SO-8 footprint | Higher conduction loss but faster edge rates; better suited for >1 MHz operation | Prefer when EMI reduction and fast transient response outweigh conduction loss concerns |
Compared with Si7852DP-T1-GE3 and DMC2038LSD-13, IRF7309PBF offers balanced trade-offs: mid-range RDS(on) and Qg values support 500 kHz operation with moderate gate drive strength and acceptable thermal rise on standard 2-layer PCBs.
Availability
IRF7309PBF is available at Aetrix Electronics and suitable for DC-DC power supplies, motor control modules, and LED lighting systems requiring stable component supply and long-term production continuity.
Supply support for IRF7309PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
IRF7309PBF belongs to the HEXFET® Power MOSFET product line, designed specifically for high-efficiency, space-constrained DC-DC conversion and motor drive applications requiring integrated complementary switching.
FAQ
What is the maximum continuous drain current for each channel of IRF7309PBF?
The N-channel MOSFET supports 4.7 A and the P-channel MOSFET supports –4.2 A at TA = 25 °C with SO-8 mounted on a standard JEDEC 2S2P test board. Derating applies above 25 °C ambient; at 70 °C, rated current drops to ~3.0 A (N-ch) and ~2.7 A (P-ch) due to thermal limits.
Can IRF7309PBF be used in a bootstrap-based high-side configuration?
No - the P-channel device is intended for true high-side switching without bootstrap circuitry. Its gate is referenced to source (pin 7), not ground, so it operates with negative VGS. Using it in a bootstrap N-ch high-side configuration would violate its gate oxide rating and cause immediate failure.
Is IRF7309PBF RoHS-compliant and lead-free?
Yes - IRF7309PBF is lead-free and RoHS-compliant per EU Directive 2011/65/EU. The "PBF" suffix explicitly denotes lead-free packaging. It meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) and is qualified for reflow soldering up to 260 °C peak temperature.
How does the common-source configuration affect PCB layout?
The shared source terminals (pins 2,3,5,7) require a single low-inductance copper pour connecting all four pins. This minimizes source loop inductance during switching transitions, reducing voltage spikes and EMI. A 20-mil wide, 1-oz copper trace is insufficient; a dedicated 5 mm² polygon pour is recommended for 2 A+ loads.
IRF7309PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 4A, 3A
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 520pF @ 15V
- Power - Max:
- 1.4W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7309PBF FAQ
1.How can I place an order for IRF7309PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7309PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7309PBF reliable?
The price and inventory of IRF7309PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7309PBF is usually 5 days.
3.What payment methods are accepted for IRF7309PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7309PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7309PBF?
IRF7309PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7309PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7309PBF?
For technical support, including IRF7309PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7309PBF requirements.
6.How does Aetrix verify that IRF7309PBF is sourced from the original manufacturer or authorized distributors?
All IRF7309PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7309PBF meets industry standards.
7.What is the process for return or replacement of IRF7309PBF?
All IRF7309PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7309PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7309PBF part is unused and in its original packaging.
Return procedure for IRF7309PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF7309PBF Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
