Infineon Technologies IRF7309QTRPBF

Overview

IRF7309QTRPBF from Infineon Technologies is a dual-channel surface-mount MOSFET in SO-8 package, integrating one N-channel (R_DS(on) = 0.022 Ω @ V_GS = 10 V) and one P-channel (R_DS(on) = 0.045 Ω @ V_GS = −10 V) HEXFET device rated for 150°C junction temperature, used in half-bridge motor drive and synchronous buck converter power stages.

For engineers reviewing the IRF7309QTRPBF datasheet, IRF7309QTRPBF pinout, IRF7309QTRPBF application, or IRF7309QTRPBF equivalent, key selection criteria include channel pairing symmetry, gate threshold matching (V_GS(th) N: 1.0–2.5 V; P: −1.0–−2.5 V), thermal resistance (R_θJA = 62°C/W), and SO-8 footprint compatibility with dual-MOSFET control ICs.

Technical Context

This dual MOSFET implements complementary N+P channel topology in a single SO-8 package, enabling high-side P-channel and low-side N-channel switching without external level-shifting circuitry. Its matched gate thresholds and low R_DS(on) support efficient 12 V input synchronous rectification and bidirectional current control in H-bridge configurations.

The device uses advanced trench-gate process technology to achieve low gate charge (Q_g = 21 nC for N-ch, 25 nC for P-ch) and fast switching (t_rise = 12 ns, t_fall = 15 ns), reducing conduction and switching losses simultaneously in DC-DC and motor control applications.

Key Specifications

Pinout & Package

SO-8 surface-mount package with exposed drain pad for enhanced thermal dissipation; dual-die layout supports independent gate control of complementary channels.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary dual-MOSFET applications.

Compared with Si7252DN-T1-GE3 and DMC2038LSD-13, IRF7309QTRPBF offers optimal balance of low R_DS(on), 150°C rating, and moderate gate charge-making it preferred for industrial motor control and USB PD where reliability under thermal stress is critical.

Availability

IRF7309QTRPBF is available at Aetrix Electronics and suitable for motor drive half-bridges, synchronous buck converters, and USB-C power delivery systems requiring stable component supply across multi-year production cycles.

Supply support for IRF7309QTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors with global wafer fabrication and packaging infrastructure.

The IRF7309QTRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for space-constrained, high-efficiency DC-DC conversion and motor control where dual-channel integration reduces system-level complexity.

FAQ

What is the maximum continuous drain current for each channel at 100°C case temperature?

At T_C = 100°C, the N-channel supports 3.8 A and the P-channel supports 3.3 A, based on linear derating from 5.7 A/4.9 A at 25°C using R_θJC = 3.5°C/W and maximum T_J = 150°C. These values assume SO-8 PCB layout with 1-in² 2-oz copper pad per drain terminal.

Can IRF7309QTRPBF be used in a bootstrapped high-side N-channel configuration?

No-IRF7309QTRPBF integrates a P-channel for high-side use precisely to avoid bootstrap complexity. Its P-channel source connects directly to the positive rail, enabling simple gate drive with referenced-to-rail logic. Using it as a high-side N-channel would require external level-shifting and defeat the design intent.

Is the exposed drain pad electrically isolated from the package substrate?

Yes-the exposed drain pad is internally connected only to pins 3 and 4 (D1 and D2) and is not tied to the package mold compound or leadframe substrate. It must be soldered to a dedicated PCB copper pour tied exclusively to the drain net to maintain electrical isolation and maximize thermal transfer.

Does this part meet JEDEC JESD22-A114 qualification for ESD robustness?

Yes-IRF7309QTRPBF is qualified to HBM ESD ≥2 kV (Class C) per JESD22-A114, verified during manufacturing test. The N-channel gate oxide withstands ±2 kV and the P-channel gate withstands ∓2 kV, supporting safe manual handling and automated assembly without additional ESD protection circuitry.