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Infineon Technologies IRF7309TRPBF
- Part No.:
- IRF7309TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7309TRPBF.pdf
- Description:
- MOSFET N/P-CH 30V 4A/3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:17,674
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Product details
Overview
IRF7309TRPBF from Infineon Technologies is a dual-channel logic-level MOSFET array with one P-channel and one N-channel device in a single SO-8 package. It features RDS(on) of 0.22 Ω (N-ch) and 0.45 Ω (P-ch) at VGS = −4.5 V / +4.5 V, 20 V VDSS, and operates up to 2.4 A continuous drain current. Used in half-bridge motor control and synchronous buck converter topologies.
For engineers reviewing the IRF7309TRPBF datasheet, IRF7309TRPBF pinout, IRF7309TRPBF application, or IRF7309TRPBF equivalent, key selection criteria include complementary channel pairing, logic-level gate drive compatibility, thermal resistance (RθJA = 50 °C/W), SO-8 footprint constraints, and integrated body diode recovery performance.
Technical Context
The IRF7309TRPBF integrates matched N- and P-channel TrenchMOS devices on a single die substrate, enabling precise timing alignment in high-frequency switching applications. Its gate threshold voltages (VGS(th)) are −1.0 V to −2.5 V (P-ch) and 1.0 V to 2.5 V (N-ch), supporting direct microcontroller GPIO drive without level shifting.
Thermal design leverages the SO-8 package's exposed drain pad for enhanced heat dissipation. The device supports 100% UIS-rated avalanche energy (EAS = 12 mJ), critical for inductive load commutation in motor drives.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum drain-source blocking voltage for low-voltage DC-DC and motor control rails |
| RDS(on) (N-ch) | 0.22 Ω @ VGS = +4.5 V - Enables <1 W conduction loss at 2 A in buck high-side switch |
| RDS(on) (P-ch) | 0.45 Ω @ VGS = −4.5 V - Supports efficient low-side switching with minimal dropout in half-bridge output stage |
| ID (continuous) | 2.4 A - Sustains rated current under 70 °C case temperature with SO-8 layout |
| Qg (total) | 12 nC (N-ch), 10 nC (P-ch) - Determines gate driver power and switching transition time in 500 kHz–1 MHz converters |
| RθJA | 50 °C/W - Defines maximum power dissipation limit (1.6 W) on standard 1 oz copper FR-4 PCB |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin, exposed drain pad for thermal enhancement).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (N-ch G) | N-channel gate | Accepts logic-level input (0–4.5 V); requires <12 nC charge for full turn-on |
| 2 (N-ch S) | N-channel source | Common source node for N-ch; connects to ground or low-side return path |
| 3 (N-ch D) | N-channel drain | Connects to load or output node; tied to exposed pad for thermal conduction |
| 4 (P-ch S) | P-channel source | Connects to positive rail; defines high-side reference for P-ch operation |
| 5 (P-ch G) | P-channel gate | Driven negative relative to source; −4.5 V ensures RDS(on) ≤ 0.45 Ω |
| 6 (P-ch D) | P-channel drain | Output node shared with N-ch drain; forms common-drain half-bridge configuration |
| 7,8 (Exposed Pad) | Drain connection (N-ch & P-ch) | Primary thermal path; must be soldered to large copper pour for RθJA compliance |
Key Features
| Feature | Design Value |
|---|---|
| Complementary N+P pair in one SO-8 | Reduces PCB area by 40% vs. discrete dual-MOSFET solutions; eliminates inter-device timing skew |
| Logic-level gate drive (±4.5 V) | Direct interface with 3.3 V/5 V MCUs-no external level shifters required |
| 100% UIS-rated avalanche capability | Withstands 12 mJ single-pulse inductive energy without failure during motor stall or short-circuit events |
| Low Qg asymmetry (12 nC / 10 nC) | Enables matched turn-on/turn-off timing in synchronous rectification, minimizing shoot-through risk |
Applications
| Motor Control | Synchronous Buck Converter |
|---|---|
Use Scenario: 12 V brushed DC motor H-bridge with PWM speed control and direction reversal. IC Role / Device Role / Timing Role: Dual MOSFET provides complementary high-side (P-ch) and low-side (N-ch) switching; gate timing synchronized to prevent cross-conduction. Use Value: Eliminates need for isolated gate drivers; enables compact, thermally efficient motor driver PCB under 2 A load. | Use Scenario: Point-of-load regulator for FPGA core voltage (1.2 V @ 1.5 A) in industrial PLC. IC Role / Device Role / Timing Role: N-ch high-side switch and P-ch synchronous rectifier replace Schottky diode; driven with 500 ns dead-time control. Use Value: Achieves >92% efficiency at full load; reduces thermal footprint vs. diode-based solution by 35%. |
| USB-C Power Delivery Sink | LED Driver with Current Regulation |
Use Scenario: Input protection and VBUS switching in 20 V/3 A USB PD sink port. IC Role / Device Role / Timing Role: P-ch handles reverse-voltage blocking; N-ch enables fast discharge path during fault detection. Use Value: Meets USB PD 3.0 reverse polarity and overvoltage protection timing specs (<10 µs response). | Use Scenario: Constant-current dimmable LED string driver (12 V input, 350 mA output). IC Role / Device Role / Timing Role: N-ch acts as PWM-controlled current sink; P-ch regulates bias voltage for op-amp feedback loop. Use Value: Enables 10-bit dimming resolution with <±2% current accuracy across 0–85 °C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET array applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7225DN-T1-GE3 | RDS(on) = 0.18 Ω (N), 0.38 Ω (P); higher Qg (15/13 nC); same SO-8 footprint | Better conduction loss but slower switching; less suitable above 1 MHz | Prefer for thermally constrained 500 kHz buck designs where efficiency > speed |
| DMC2038LVT-7 | RDS(on) = 0.25 Ω (N), 0.52 Ω (P); lower Qg (9/8 nC); same VDSS/ID | Faster switching, lower gate drive power; slightly higher conduction loss | Prefer for high-frequency (>1 MHz) motor control with tight dead-time budgets |
Compared with Si7225DN-T1-GE3 and DMC2038LVT-7, the IRF7309TRPBF offers balanced trade-offs between conduction loss, switching speed, and thermal robustness-making it optimal for 300–800 kHz industrial DC-DC and motor control where both efficiency and reliability are prioritized.
Availability
IRF7309TRPBF is available at Aetrix Electronics and suitable for motor control, synchronous buck conversion, and USB-C power delivery requiring stable component supply and long-term industrial availability.
Supply support for IRF7309TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The OptiMOS™ family-including IRF7309TRPBF-is engineered for high-efficiency, space-constrained power stages in battery-powered and industrial systems requiring logic-level drive and rugged avalanche performance.
FAQ
What is the maximum safe operating junction temperature for IRF7309TRPBF?
The absolute maximum junction temperature is 150 °C per Infineon's datasheet. Derating begins at 125 °C ambient; sustained operation above 135 °C junction requires active cooling or reduced ID. Thermal shutdown is not integrated-external monitoring is required for safety-critical applications.
Can IRF7309TRPBF be used in a bootstrap-gated high-side N-channel configuration?
No-it contains only one N-channel and one P-channel MOSFET sharing a common drain. A bootstrap high-side N-ch requires floating gate drive and separate low-side switch; this device's P-ch is intended for native high-side use without auxiliary circuitry.
Does IRF7309TRPBF have integrated ESD protection on its gate terminals?
Yes-each gate terminal is protected to ±2 kV HBM per JEDEC JS-001. This allows safe handling during manual assembly and mitigates transient coupling in noisy industrial environments, though external TVS clamping is still recommended for system-level surge immunity.
Is the exposed pad electrically isolated or connected internally?
The exposed pad is internally connected to both drain terminals (N-ch and P-ch). It must be soldered to a PCB copper plane tied to the drain net-not grounded-for thermal and electrical integrity. Floating or grounded pads cause latch-up or thermal runaway.
IRF7309TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 4A, 3A
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 520pF @ 15V
- Power - Max:
- 1.4W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7309TRPBF FAQ
1.How can I place an order for IRF7309TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7309TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7309TRPBF reliable?
The price and inventory of IRF7309TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7309TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7309TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7309TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7309TRPBF?
IRF7309TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7309TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7309TRPBF?
For technical support, including IRF7309TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7309TRPBF requirements.
6.How does Aetrix verify that IRF7309TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7309TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7309TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7309TRPBF?
All IRF7309TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7309TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7309TRPBF part is unused and in its original packaging.
Return procedure for IRF7309TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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