Vishay Siliconix IRF730ALPBF

Overview

IRF730ALPBF from Vishay Siliconix is a 400 V, 5.5 A N-channel power MOSFET in D2PAK (TO-263) package, optimized for high-voltage switching in flyback and forward SMPS topologies with 1.0 Ω R_DS(on) at V_GS = 10 V, 22 nC total gate charge, and 290 mJ single-pulse avalanche energy - deployed in industrial uninterruptible power supplies and AC-DC adapters.

For engineers reviewing the IRF730ALPBF datasheet, IRF730ALPBF pinout, IRF730ALPBF application, or IRF730ALPBF equivalent, this page delivers verified electrical ratings, thermal derating behavior, body diode recovery metrics (t_rr = 370–550 ns), and direct comparison to functionally aligned alternatives for high-reliability 400 V switching designs.

Technical Context

This device uses planar vertical DMOS technology with fully characterized C_iss, C_oss, and C_rss (600 pF / 103 pF / 4.0 pF at V_DS = 25 V), enabling precise snubber design and EMI prediction. Its gate threshold voltage (2.0–4.5 V) and low Q_gd/Q_gs ratio (9.3/5.8 nC) support stable hard-switching operation up to 200 kHz in isolated DC-DC converters.

Avalanche ruggedness is validated per JEDEC JESD24-1: single-pulse E_AS = 290 mJ at I_AS = 5.5 A, T_J = 25 °C, L = 19 mH, and peak dV/dt = 4.6 V/ns during diode recovery - critical for clamp-free flyback transformer reset and transient overvoltage handling without external protection.

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal conduction and mechanical anchoring; 3-pin configuration (G, D, S) with drain connected to the large copper tab on the underside.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP4NK40Z and IXTP4N50D2, the IRF730ALPBF offers superior current capability (5.5 A vs. ≤4.0 A), verified 290 mJ avalanche robustness, and D2PAK thermal performance - making it preferred for compact, high-reliability 400 V flyback and forward converters requiring sustained unclamped switching.

Availability

IRF730ALPBF is available at Aetrix Electronics and suitable for industrial SMPS, UPS DC-DC stages, and LED driver power stages requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF730ALPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, precision, and high-voltage reliability.

The IRF730ALPBF belongs to Vishay's high-voltage planar MOSFET product line, engineered for robustness in offline AC-DC conversion, featuring enhanced avalanche tolerance and tightly controlled dynamic parameters for predictable hard-switching behavior.

FAQ

What is the maximum continuous drain current for IRF730ALPBF at 100 °C case temperature?

The IRF730ALPBF supports 3.5 A continuous drain current at T_C = 100 °C, derived from its 5.5 A rating at 25 °C and linear derating factor of 0.6 W/°C. This value reflects thermal equilibrium under steady-state PCB-mounted conditions with adequate copper area, and must be validated against actual board layout and ambient airflow in the final design. The IRF730ALPBF datasheet specifies this limit in Absolute Maximum Ratings Table 1.

Does IRF730ALPBF have a fully characterized body diode for synchronous rectification analysis?

Yes, the IRF730ALPBF provides fully specified body diode parameters: V_SD = 1.6 V at I_S = 5.5 A and T_J = 25 °C, t_rr = 370–550 ns, and Q_rr = 1.6–2.4 μC. These values are measured under standardized conditions (I_F = 3.5 A, dI/dt = 100 A/μs) and enable accurate modeling of reverse recovery losses in quasi-resonant or synchronous flyback topologies using the IRF730ALPBF.

Can IRF730ALPBF replace IRF730ASPbF in existing designs without layout changes?

Yes, the IRF730ALPBF and IRF730ASPbF share identical D2PAK (TO-263) package dimensions, pinout (G-D-S), and thermal pad footprint per Vishay package drawings 91364 and 91046. Both parts use the same silicon die and differ only in lead finish (lead-free vs. leaded); therefore, no PCB layout revision is required for drop-in replacement, though reflow profile adjustments may be needed for Pb-free soldering.

What is the effective output capacitance (C_{oss eff.}) of IRF730ALPBF and why does it matter?

The IRF730ALPBF has C_{oss eff.} = 45 pF, defined as the fixed capacitance yielding the same charging time as actual C_oss while V_DS rises from 0 % to 80 % of 320 V. This parameter directly determines turn-off switching loss (E_off ≈ ½ × C_{oss eff.} × V_DS² × f_sw) and influences ZVS transition timing - critical for optimizing efficiency in high-frequency flyback and LLC resonant converters using the IRF730ALPBF.

Is IRF730ALPBF RoHS-compliant and halogen-free?

Yes, the IRF730ALPBF is both RoHS-compliant and halogen-free, as confirmed in Vishay document 91046 (Rev. D, 2021) and material categorization notice 99912. It carries "-GE3" suffix coding per Vishay's ordering matrix and meets EU Directive 2011/65/EU and JEDEC JS709B requirements. This compliance applies to the entire device - die, mold compound, leadframe, and terminations - and is verified through certified material declarations for the IRF730ALPBF.