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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF730APBF-BE3

Name: IRF730APBF-BE3
Brand: Vishay Siliconix
SKU: IRF730APBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF730APBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF730APBF-BE3.pdf

Description:: MOSFET N-CH 400V 5.5A TO220AB

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Product details

Overview

IRF730APBF-BE3 from Vishay Siliconix is a 400 V, 5.5 A N-channel power MOSFET in TO-220AB package, featuring 1.0 Ω R_DS(on) at V_GS = 10 V, 22 nC total gate charge, and 290 mJ single-pulse avalanche energy - designed for high-voltage switching in flyback and forward SMPS topologies.

For engineers reviewing the IRF730APBF-BE3 datasheet, IRF730APBF-BE3 pinout, IRF730APBF-BE3 application, or IRF730APBF-BE3 equivalent, key selection criteria include its 400 V V_DS, rugged dV/dt capability (4.6 V/ns), low Q_g/Q_gd ratio, and validated unclamped inductive switching performance under TJ ≤ 150 °C.

Technical Context

This device implements a planar vertical DMOS structure optimized for high-voltage hard-switching applications. Its gate charge profile (Q_gs = 5.8 nC, Q_gd = 9.3 nC) supports predictable turn-on/turn-off timing with minimal Miller plateau sensitivity, while the specified C_{oss eff.} = 45 pF enables accurate snubber design for 320 V bus operation.

The integral body diode exhibits t_rr = 370–550 ns and Q_rr = 1.6–2.4 μC at I_F = 3.5 A, dI/dt = 100 A/μs, making it suitable for non-synchronous rectification where controlled reverse recovery is required without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - supports 320 V DC bus with 25 % margin for line transients in offline SMPS
R_DS(on)	1.0 Ω @ V_GS = 10 V - delivers ≤ 30 W conduction loss at 5.5 A continuous drain current
Q_g	22 nC - enables simple gate drive with <1 W average power at 100 kHz switching
E_AS	290 mJ - withstands unclamped inductive energy during startup/fault without failure
dV/dt rating	4.6 V/ns - ensures robustness against parasitic turn-on in high-dV/dt environments
T_J range	−55 to +150 °C - qualified for industrial ambient and thermally constrained enclosures

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, 1.70 °C/W junction-to-case thermal resistance, and 10 lbf·in (1.1 N·m) maximum mounting torque.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; 5.8 nC Q_gs enables fast turn-on with minimal overshoot
D (Drain)	High-side switch node	Connected to TO-220 tab; electrically isolated mount required for floating topologies
S (Source)	Reference return path	Common return for gate drive and load current; defines local ground reference for driver IC

Key Features

Feature	Design Value
Low Q_g/Q_gd ratio	2.36 - reduces Miller-induced switching delay and improves controllability in hard-switched converters
Specified C_{oss eff.}	45 pF - enables accurate calculation of turn-off losses and snubber sizing for 320 V operation
Characterized avalanche performance	290 mJ E_AS, 5.5 A I_AR - eliminates need for external clamping in transformer reset circuits
Body diode Q_rr & t_rr	1.6–2.4 μC / 370–550 ns - allows predictable commutation behavior in non-synchronous flyback designs

Applications

Offline Flyback SMPS	Uninterruptible Power Supply
Use Scenario: Primary-side switch in 50–200 W AC/DC adapters with universal input (85–265 VAC). IC Role / Device Role / Timing Role: High-voltage N-channel switch controlling transformer energy transfer during duty cycle; operates at 65–130 kHz. Use Value: 400 V V_DS and 290 mJ E_AS ensure reliable operation across full input range and transient surges without snubber overdesign.	Use Scenario: DC-DC boost stage in line-interactive UPS converting battery voltage to regulated 380–400 V DC bus. IC Role / Device Role / Timing Role: Main power switch in high-efficiency boost converter; handles bidirectional current during battery charging/discharging cycles. Use Value: Low R_DS(on) (1.0 Ω) minimizes conduction loss at 5.5 A continuous, while rugged dV/dt rating prevents false triggering during grid transients.
Forward Converter Reset	Industrial Motor Drive Snubber
Use Scenario: Single-transistor forward converter with transformer reset winding, operating at US line input only (100–120 VAC). IC Role / Device Role / Timing Role: Primary switch conducting during main duty cycle; subjected to transformer reset voltage spikes up to 2× V_in. Use Value: Validated repetitive avalanche rating (7.4 mJ EAR) and 4.6 V/ns dV/dt immunity enable stable reset without auxiliary clamping circuitry.	Use Scenario: RC snubber switch in IGBT-based 3-phase motor drives protecting against inductive kickback during PWM transitions. IC Role / Device Role / Timing Role: Fast-turning snubber element absorbing stored inductive energy during IGBT turn-off events. Use Value: 22 nC Q_g and 16 ns fall time allow precise timing alignment with IGBT gate signals, minimizing overlap loss and thermal stress.

Offline Flyback SMPS

Uninterruptible Power Supply

Use Scenario: Primary-side switch in 50–200 W AC/DC adapters with universal input (85–265 VAC).

IC Role / Device Role / Timing Role: High-voltage N-channel switch controlling transformer energy transfer during duty cycle; operates at 65–130 kHz.

Use Value: 400 V V_DS and 290 mJ E_AS ensure reliable operation across full input range and transient surges without snubber overdesign.

Use Scenario: DC-DC boost stage in line-interactive UPS converting battery voltage to regulated 380–400 V DC bus.

IC Role / Device Role / Timing Role: Main power switch in high-efficiency boost converter; handles bidirectional current during battery charging/discharging cycles.

Use Value: Low R_DS(on) (1.0 Ω) minimizes conduction loss at 5.5 A continuous, while rugged dV/dt rating prevents false triggering during grid transients.

Forward Converter Reset

Industrial Motor Drive Snubber

Use Scenario: Single-transistor forward converter with transformer reset winding, operating at US line input only (100–120 VAC).

IC Role / Device Role / Timing Role: Primary switch conducting during main duty cycle; subjected to transformer reset voltage spikes up to 2× V_in.

Use Value: Validated repetitive avalanche rating (7.4 mJ EAR) and 4.6 V/ns dV/dt immunity enable stable reset without auxiliary clamping circuitry.

Use Scenario: RC snubber switch in IGBT-based 3-phase motor drives protecting against inductive kickback during PWM transitions.

IC Role / Device Role / Timing Role: Fast-turning snubber element absorbing stored inductive energy during IGBT turn-off events.

Use Value: 22 nC Q_g and 16 ns fall time allow precise timing alignment with IGBT gate signals, minimizing overlap loss and thermal stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK50ZFP	500 V V_DS, 3.5 A I_D, 1.8 Ω R_DS(on), Zener-protected gate	Higher voltage margin but lower current rating and higher on-resistance	Preferred where enhanced overvoltage protection is critical and peak current ≤ 3.5 A
IXTP1R2N50D	500 V V_DS, 1.2 A I_D, 4.5 Ω R_DS(on), ultra-low Q_g (8.5 nC)	Lower current/power capability but superior high-frequency switching efficiency	Selected for low-power, high-frequency resonant converters where gate drive simplicity outweighs conduction loss

Compared with STP4NK50ZFP and IXTP1R2N50D, the IRF730APBF-BE3 offers balanced 400 V/5.5 A capability with industry-standard gate charge and proven avalanche ruggedness - making it optimal for cost-sensitive, medium-power SMPS where reliability under transient stress is prioritized over extreme frequency or voltage margin.

Availability

IRF730APBF-BE3 is available at Aetrix Electronics and suitable for offline flyback converters, uninterruptible power supplies, and forward converter reset circuits requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF730APBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and application-specific characterization.

The IRF730A series targets high-voltage switching applications in industrial power conversion, offering fully characterized avalanche, dV/dt, and capacitance parameters to simplify robust SMPS design without iterative prototyping.

FAQ

What is the maximum continuous drain current for IRF730APBF-BE3 at 100 °C case temperature?

The IRF730APBF-BE3 supports 3.5 A continuous drain current at T_C = 100 °C, derating linearly from 5.5 A at 25 °C using a 0.6 W/°C factor. This value is verified per Absolute Maximum Ratings table and reflects thermal limits of the TO-220AB package under real heatsink conditions.

Does IRF730APBF-BE3 have a built-in gate protection diode?

No, the IRF730APBF-BE3 does not integrate a gate protection Zener diode. Its gate-source voltage rating is ±30 V, and external gate clamping (e.g., 15 V Zener) is recommended in noisy environments. This differs from protected variants like STP4NK50ZFP, which include integrated gate protection.

What is the typical body diode forward voltage of IRF730APBF-BE3 at 5.5 A and 25 °C?

The typical body diode forward voltage (V_SD) of IRF730APBF-BE3 is 1.6 V at I_S = 5.5 A and T_J = 25 °C with V_GS = 0 V. This value is measured per the Drain-Source Body Diode Characteristics table and impacts conduction loss in non-synchronous rectifier configurations.

Can IRF730APBF-BE3 be used in synchronous rectification topologies?

No, IRF730APBF-BE3 is not optimized for synchronous rectification due to its relatively high R_DS(on) (1.0 Ω) and slow body diode recovery (t_rr = 370–550 ns). It is intended for primary-side switching; secondary-side synchronous rectification requires lower R_DS(on), faster t_rr, and logic-level gate drive compatibility.

What is the effective output capacitance C_{oss eff.} of IRF730APBF-BE3 and why is it specified?

The effective output capacitance C_{oss eff.} of IRF730APBF-BE3 is 45 pF, defined as the fixed capacitance yielding the same charging time as actual C_oss while V_DS rises from 0 % to 80 % of 320 V. This parameter enables accurate estimation of turn-off energy and snubber design in hard-switched applications.

IRF730APBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 1Ohm @ 3.3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF730APBF-BE3 FAQ

1.How can I place an order for IRF730APBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF730APBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF730APBF-BE3 reliable?

The price and inventory of IRF730APBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF730APBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRF730APBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF730APBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF730APBF-BE3?

IRF730APBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF730APBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF730APBF-BE3?

For technical support, including IRF730APBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF730APBF-BE3 requirements.

6.How does Aetrix verify that IRF730APBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRF730APBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF730APBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRF730APBF-BE3?

All IRF730APBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF730APBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF730APBF-BE3 part is unused and in its original packaging.

Return procedure for IRF730APBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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