Vishay Siliconix IRF730ASPBF
- Part No.:
- IRF730ASPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF730ASPBF.pdf
- Description:
- MOSFET N-CH 400V 5.5A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:1,497
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Product details
Overview
IRF730ASPBF from Vishay Siliconix is a 400 V, 5.5 A N-channel power MOSFET in D2PAK (TO-263) package, optimized for high-voltage switching in flyback and forward SMPS topologies with low gate charge (22 nC), 1.0 Ω RDS(on) at 10 V, and robust avalanche energy rating (290 mJ). It serves as the primary high-side switch in offline AC/DC converters requiring reliable unclamped inductive switching.
For engineers reviewing the IRF730ASPBF datasheet, IRF730ASPBF pinout, IRF730ASPBF application, or IRF730ASPBF equivalent, key selection criteria include its 400 V VDS, 1.7 °C/W RthJC, 4.6 V/ns peak diode recovery dV/dt, body diode trr of 370–550 ns, and suitability for 22 A pulsed drain current in uninterruptible power supplies and industrial SMPS designs.
Technical Context
This MOSFET employs a planar vertical DMOS structure with fully characterized Ciss (600 pF), Coss (103 pF), and Crss (4.0 pF) to support precise snubber design and EMI control in hard-switched topologies. Its gate threshold voltage range (2.0–4.5 V) ensures stable turn-on under wide input voltage conditions while maintaining noise immunity.
The device integrates an intrinsic body diode rated for 5.5 A continuous and 22 A pulsed conduction, with specified Qrr (1.6–2.4 μC) and trr (370–550 ns) enabling predictable reverse recovery behavior in transformer-reset circuits. Avalanche ruggedness is validated per JEDEC JESD24-1 with single-pulse EAS = 290 mJ at TJ = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 400 V - supports 230 VAC mains with ≥2× safety margin in flyback designs |
| RDS(on) max | 1.0 Ω at VGS = 10 V - enables <1.2 W conduction loss at 3.5 A DC |
| Qg max | 22 nC - reduces gate driver power requirement and simplifies 5–12 V logic-level drive |
| EAS | 290 mJ - sustains unclamped inductive switching in transformer reset without failure |
| RthJC | 1.7 °C/W - allows 74 W dissipation with ≤125 °C case-to-junction rise at 25 °C ambient |
| trr | 370–550 ns - defines minimum dead-time in synchronous rectification and ZVS designs |
| ID cont. | 5.5 A at TC = 25 °C - sets thermal limit for PCB-mounted operation with 1" FR-4 copper area |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) compatible with standard reflow profiles and IPC-7351B land pattern AN826.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts 10 V drive to achieve full enhancement; 5.8 nC Qgs defines Miller plateau timing |
| D (Drain) | High-voltage power terminal | Connected to transformer primary or bus rail; electrically tied to thermal pad for heat sinking |
| S (Source) | Power return and reference | Common node for gate drive return and current sensing; referenced to ground in low-side configurations |
Key Features
| Feature | Design Value |
|---|---|
| Low Qg | 22 nC total gate charge enables efficient drive with low-power controllers like UC384x |
| Avalanche ruggedness | 290 mJ single-pulse rating verified per JEDEC JESD24-1 for transformer reset reliability |
| Body diode characterization | Qrr = 1.6–2.4 μC and trr = 370–550 ns enable accurate dead-time calculation in quasi-resonant SMPS |
| Effective Coss | 45 pF Coss eff. improves soft-switching predictability in LLC resonant converters |
| dV/dt immunity | 4.6 V/ns peak diode recovery dV/dt withstand prevents spurious turn-on in high-noise environments |
Applications
| Offline Flyback Converter | Uninterruptible Power Supply |
|---|---|
Use Scenario: Primary-side switch in 50–200 W universal-input AC/DC adapters with transformer reset via RCD clamp. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer during duty cycle; operates at 65–130 kHz with hard-switched turn-off. Use Value: 400 V VDS and 290 mJ EAS prevent failure during transient overloads and startup surges. | Use Scenario: DC-DC boost stage in line-interactive UPS converting battery voltage to regulated 380–400 VDC bus. IC Role / Device Role / Timing Role: Main power switch in two-transistor forward topology; handles 22 A pulsed current during battery discharge peaks. Use Value: 22 A IDM rating and 1.7 °C/W RthJC sustain short-term overload without thermal runaway. |
| Industrial SMPS | High-Voltage DC-DC Converter |
Use Scenario: Primary switch in DIN-rail mounted 24 V/48 V output power supply for PLCs and motor drives. IC Role / Device Role / Timing Role: Hard-switched MOSFET in single-transistor forward converter with active clamp; operates continuously at 100 °C case temperature. Use Value: RDS(on) = 1.0 Ω at 100 °C ensures stable efficiency across industrial temperature range. | Use Scenario: Isolated DC-DC stage stepping up 24 V to 380 V for PoE++ or LED driver front-end. IC Role / Device Role / Timing Role: High-side switch in asymmetrical half-bridge; requires fast body diode recovery for freewheeling path. Use Value: trr = 370–550 ns and Qrr = 1.6–2.4 μC minimize switching losses and voltage spikes during commutation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK40ZFP | 400 V, 3.5 A, RDS(on) = 1.4 Ω, Qg = 12 nC, TO-220FP package | Lower current rating and higher RDS(on); smaller package limits thermal performance | Preferred where space-constrained board layout favors through-hole mounting and lower gate drive power is critical |
| IXTP4N40P | 400 V, 4.0 A, RDS(on) = 1.2 Ω, Qg = 14 nC, TO-220 package | Higher RthJA (62 °C/W vs. 40 °C/W), no avalanche rating published | Selected when cost sensitivity outweighs need for avalanche ruggedness and high-current capability |
Compared with IRF730ASPBF, STP4NK40ZFP offers lower gate charge but sacrifices 1.0 A continuous current and thermal robustness, while IXTP4N40P lacks documented avalanche energy rating and delivers inferior thermal resistance-making IRF730ASPBF the preferred choice for mission-critical SMPS with unclamped inductive loads.
Availability
IRF730ASPBF is available at Aetrix Electronics and suitable for offline flyback converters, uninterruptible power supplies, and industrial SMPS requiring stable component supply, long-term lifecycle support, and RoHS-compliant lead-free assembly.
Supply support for IRF730ASPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF730A family was engineered for high-voltage, medium-current switching in offline power conversion, emphasizing avalanche ruggedness, low gate charge, and repeatable body diode performance in transformer-reset topologies.
FAQ
What is the maximum continuous drain current for IRF730ASPBF at 100 °C case temperature?
The IRF730ASPBF supports 3.5 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures junction temperature remains within the -55 to +150 °C operating range. At 25 °C case temperature, the rating increases to 5.5 A, with linear derating applied between these points using the 0.6 W/°C factor.
Does IRF730ASPBF have a specified avalanche energy rating?
Yes, the IRF730ASPBF has a single-pulse avalanche energy rating of 290 mJ, measured under standardized test conditions (TJ = 25 °C, L = 19 mH, Rg = 25 Ω, IAS = 5.5 A). This value is validated per JEDEC JESD24-1 and applies directly to the IRF730ASPBF variant, confirming its suitability for unclamped inductive switching in flyback and forward converter transformer reset circuits.
What is the gate-source threshold voltage range for IRF730ASPBF?
The gate-source threshold voltage (VGS(th)) for IRF730ASPBF is specified from 2.0 V to 4.5 V at TJ = 25 °C and ID = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing noise margin against false triggering in electrically noisy power supply environments. The parameter is fully characterized and tested across production lots.
Is IRF730ASPBF RoHS-compliant and halogen-free?
Yes, IRF730ASPBF is both RoHS-compliant and halogen-free, as confirmed by Vishay's material categorization documentation (www.vishay.com/doc?99912). The "PbF" suffix denotes lead-free termination, and the device meets EU Directive 2011/65/EU requirements. Full compliance data, including substance declarations and test reports, are available upon request from Aetrix Electronics.
What is the typical reverse recovery time of the body diode in IRF730ASPBF?
The body diode reverse recovery time (trr) for IRF730ASPBF is specified as 370–550 ns under test conditions of TJ = 25 °C, IF = 3.5 A, and dI/dt = 100 A/μs. This value is measured on the actual IRF730ASPBF device and is critical for determining minimum dead-time in quasi-resonant and synchronous rectification topologies where the intrinsic diode conducts during switching transitions.
IRF730ASPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1Ohm @ 3.3A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 600 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 74W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF730ASPBF FAQ
1.How can I place an order for IRF730ASPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF730ASPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF730ASPBF reliable?
The price and inventory of IRF730ASPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF730ASPBF is usually 5 days.
3.What payment methods are accepted for IRF730ASPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF730ASPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF730ASPBF?
IRF730ASPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF730ASPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF730ASPBF?
For technical support, including IRF730ASPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF730ASPBF requirements.
6.How does Aetrix verify that IRF730ASPBF is sourced from the original manufacturer or authorized distributors?
All IRF730ASPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF730ASPBF meets industry standards.
7.What is the process for return or replacement of IRF730ASPBF?
All IRF730ASPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF730ASPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF730ASPBF part is unused and in its original packaging.
Return procedure for IRF730ASPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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