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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF730BPBF

Name: IRF730BPBF
Brand: Vishay Siliconix
SKU: IRF730BPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF730BPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF730BPBF.pdf

Description:: MOSFET N-CH 400V 6A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF730BPBF from Vishay Siliconix is a 400 V, 6 A N-channel power MOSFET in TO-220AB package, featuring 1.0 Ω max R_DS(on) at V_GS = 10 V, 18 nC total gate charge, and 104 mJ single-pulse avalanche energy-designed for high-voltage switching in SMPS, motor drives, and induction heating circuits.

For engineers reviewing the IRF730BPBF datasheet, IRF730BPBF pinout, IRF730BPBF application, or IRF730BPBF equivalent, key selection criteria include its 400 V V_DS, 1.0 Ω on-resistance, 18 nC Q_g, TO-220AB thermal performance (R_thJC = 1.2 °C/W), and avalanche-rated ruggedness for reliable operation in hard-switched industrial power stages.

Technical Context

This discrete N-channel MOSFET uses planar silicon technology with optimized cell layout to achieve low area-specific on-resistance and reduced capacitive switching losses. Its gate threshold voltage (3–5 V) and low input capacitance (311 pF C_iss) support simple 10 V gate drive while maintaining fast switching (t_r = 11–22 ns, t_f = 8–16 ns).

The device integrates a robust body diode rated for 6 A continuous source-drain current and 236 ns reverse recovery time, enabling use in freewheeling and synchronous rectification roles where unclamped inductive switching occurs. Its 104 mJ E_AS rating confirms suitability for energy-absorbing applications without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	400 V - supports primary-side switching in offline 380 V DC bus and 230 V AC-input SMPS
R_DS(on) max	1.0 Ω at V_GS = 10 V - limits conduction loss to ≤9 W at 3 A continuous drain current
Q_g max	18 nC - enables efficient 100 kHz+ switching with standard 1 A gate drivers
E_AS	104 mJ - withstands unclamped inductive turn-off events in motor control and welding inverters
P_D max	104 W at T_C = 25 °C - requires heatsink for >4 A continuous operation in ambient air
R_thJC	1.2 °C/W - allows direct mounting to aluminum heatsinks for thermal management in industrial enclosures
V_GS(th)	3–5 V - ensures full enhancement with standard logic-level gate drivers, no level-shifting needed

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin vertical mounting configuration. Mounting hole centered 0.160" (4.06 mm) from top edge; lead spacing 0.200" (5.08 mm).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V gate drive signal; low 311 pF C_iss minimizes driver power and propagation delay
D (Drain)	High-voltage power terminal	Connected to heatsink tab; carries full load current and absorbs avalanche energy during inductive turn-off
S (Source)	Reference node / return path	Provides ground reference for gate drive; connects to low-side shunt or controller ground plane

Key Features

Feature	Design Value
Avalanche energy rated (UIS)	104 mJ single-pulse - eliminates need for external clamping in flyback and resonant converters
Low figure-of-merit (R_on × Q_g)	18 Ω·nC - balances conduction and switching losses for optimal efficiency in 50–200 kHz SMPS
High body diode ruggedness	236 ns t_rr, 1.1 μC Q_rr - sustains repetitive commutation in motor drive half-bridges without thermal runaway
Reduced capacitive switching losses	C_oss = 38 pF, C_rss = 7 pF - lowers Miller-induced shoot-through risk and improves dV/dt immunity (24 V/ns)
Lead (Pb)-free termination	RoHS-compliant Pb-free plating - meets IPC/JEDEC J-STD-020 reflow profile requirements

Applications

Server Power Supply	Induction Heating Inverter
Use Scenario: Primary-side switch in 80+ Gold-rated 1 kW telecom rectifier operating at 100 kHz. IC Role / Device Role / Timing Role: High-voltage N-channel switching transistor handling 380 V DC bus and 6 A peak current. Use Value: 400 V V_DS margin and 104 mJ E_AS ensure reliability under line surges and transformer leakage spikes.	Use Scenario: Half-bridge switch in 20 kHz domestic induction cooktop driving 15 μH resonant tank. IC Role / Device Role / Timing Role: Fast-switching power stage element managing 400 V DC link and 12 A pulsed load current. Use Value: Low Q_g (18 nC) and fast t_r/t_f enable precise zero-voltage switching timing control.
Motor Drive Output Stage	Welding Power Inverter
Use Scenario: Low-side switch in 3-phase 400 V industrial servo drive with regenerative braking. IC Role / Device Role / Timing Role: N-channel MOSFET conducting bidirectional current via integrated body diode during PWM dead-time. Use Value: 236 ns t_rr and 6 A I_S rating prevent diode failure during high-dI/dt regeneration.	Use Scenario: Inverter switch in 100 kHz arc-welding power supply delivering 200 A output. IC Role / Device Role / Timing Role: Hard-switched main power device absorbing repetitive inductive energy during arc interruption. Use Value: 104 mJ E_AS and 1.2 °C/W R_thJC sustain 100% duty cycle bursts without thermal derating.

Server Power Supply

Induction Heating Inverter

Use Scenario: Primary-side switch in 80+ Gold-rated 1 kW telecom rectifier operating at 100 kHz.

IC Role / Device Role / Timing Role: High-voltage N-channel switching transistor handling 380 V DC bus and 6 A peak current.

Use Value: 400 V V_DS margin and 104 mJ E_AS ensure reliability under line surges and transformer leakage spikes.

Use Scenario: Half-bridge switch in 20 kHz domestic induction cooktop driving 15 μH resonant tank.

IC Role / Device Role / Timing Role: Fast-switching power stage element managing 400 V DC link and 12 A pulsed load current.

Use Value: Low Q_g (18 nC) and fast t_r/t_f enable precise zero-voltage switching timing control.

Motor Drive Output Stage

Welding Power Inverter

Use Scenario: Low-side switch in 3-phase 400 V industrial servo drive with regenerative braking.

IC Role / Device Role / Timing Role: N-channel MOSFET conducting bidirectional current via integrated body diode during PWM dead-time.

Use Value: 236 ns t_rr and 6 A I_S rating prevent diode failure during high-dI/dt regeneration.

Use Scenario: Inverter switch in 100 kHz arc-welding power supply delivering 200 A output.

IC Role / Device Role / Timing Role: Hard-switched main power device absorbing repetitive inductive energy during arc interruption.

Use Value: 104 mJ E_AS and 1.2 °C/W R_thJC sustain 100% duty cycle bursts without thermal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK50ZFP	500 V V_DS, 3.8 Ω R_DS(on), 12 nC Q_g, TO-220FP package (isolated drain)	Higher voltage rating but higher on-resistance; lower thermal mass due to FP package	Select when 500 V margin is required and lower gate charge outweighs higher conduction loss
IXTP4N50D2	500 V V_DS, 2.4 Ω R_DS(on), 14 nC Q_g, TO-220AB package, enhanced avalanche rating (220 mJ)	Superior avalanche capability and lower R_DS(on), but higher cost and longer lead time	Select for mission-critical welder or UPS inverters requiring extended UIS endurance

Compared with STP4NK50ZFP and IXTP4N50D2, the IRF730BPBF offers best-in-class balance of 400 V rating, 1.0 Ω on-resistance, and 104 W power dissipation in standard TO-220AB-making it optimal for cost-sensitive, thermally constrained industrial SMPS where 400 V operation is sufficient.

Availability

IRF730BPBF is available at Aetrix Electronics and suitable for server power supplies, induction heating systems, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IRF730BPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and power applications.

The D Series power MOSFETs-including IRF730BPBF-are engineered for high-voltage switching in SMPS, motor controls, and welding equipment, emphasizing avalanche ruggedness, low FOM, and thermal stability.

FAQ

What is the maximum continuous drain current for IRF730BPBF at 100 °C case temperature?

The IRF730BPBF supports 4 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and must be verified against actual heatsink performance and ambient conditions in the final design. The IRF730BPBF datasheet specifies linear derating beyond 100 °C at 0.8 W/°C.

Does IRF730BPBF have a RoHS-compliant version?

Yes, IRF730BPBF is the lead (Pb)-free, RoHS-compliant variant of the IRF730B, as confirmed by Vishay's ordering information and material categorization note. It uses matte tin-plated leads and complies with JEDEC J-STD-020 moisture sensitivity level 1 for reflow soldering.

What is the gate threshold voltage range for IRF730BPBF?

The IRF730BPBF has a gate-source threshold voltage (V_GS(th)) range of 3 V to 5 V at T_J = 25 °C and I_D = 250 μA, ensuring reliable turn-on with standard 10 V gate drivers while avoiding spurious conduction near 0 V.

Can IRF730BPBF be used in avalanche mode repeatedly?

The IRF730BPBF is rated for single-pulse avalanche energy (E_AS) of 104 mJ, but not for repetitive avalanche operation. Repetitive unclamped inductive switching exceeds safe operating area limits and may cause cumulative junction damage. For such applications, consider devices explicitly rated for repetitive UIS or add external clamping.

What is the typical reverse recovery time of the body diode in IRF730BPBF?

The IRF730BPBF body diode exhibits a typical reverse recovery time (t_rr) of 236 ns at T_J = 25 °C, I_F = 3 A, dI/dt = 100 A/μs, and V_R = 20 V. This value is critical for evaluating commutation losses in half-bridge and synchronous rectifier topologies using the IRF730BPBF.

IRF730BPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1Ohm @ 3A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 311 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF730BPBF FAQ

1.How can I place an order for IRF730BPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF730BPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF730BPBF reliable?

The price and inventory of IRF730BPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF730BPBF is usually 5 days.

3.What payment methods are accepted for IRF730BPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF730BPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF730BPBF?

IRF730BPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF730BPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF730BPBF?

For technical support, including IRF730BPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF730BPBF requirements.

6.How does Aetrix verify that IRF730BPBF is sourced from the original manufacturer or authorized distributors?

All IRF730BPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF730BPBF meets industry standards.

7.What is the process for return or replacement of IRF730BPBF?

All IRF730BPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF730BPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF730BPBF part is unused and in its original packaging.

Return procedure for IRF730BPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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