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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF730S

Name: IRF730S
Brand: Vishay Siliconix
SKU: IRF730S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF730S

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF730S.pdf

Description:: MOSFET N-CH 400V 5.5A D2PAK

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Product details

Overview

IRF730S from Vishay Siliconix is a 400 V, 5.5 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, featuring 1.0 Ω R_DS(on) at V_GS = 10 V, 38 nC total gate charge, and repetitive avalanche rating up to 7.4 mJ - designed for high-voltage DC-DC converters and offline SMPS primary-side switching.

For engineers reviewing the IRF730S datasheet, IRF730S pinout, IRF730S application, or IRF730S equivalent, key selection criteria include its 400 V V_DS, 1.0 Ω on-resistance at 10 V drive, 22 nC Q_gd, 290 mJ single-pulse avalanche energy, and D2PAK thermal performance with 1.7 °C/W R_thJC.

Technical Context

The IRF730S employs a third-generation silicon process optimized for rugged high-voltage operation, with dynamic dV/dt rating of 4.0 V/ns and intrinsic body diode recovery time (t_rr) of 270–530 ns at 100 A/μs dI/dt. Its gate threshold voltage (2.0–4.0 V) ensures reliable turn-on with standard 10 V logic-level drivers.

Thermally, it delivers 74 W maximum power dissipation at T_C = 25 °C and maintains safe operating area (SOA) up to 5.5 A at 400 V in single-pulse mode. The device is rated for junction temperatures from –55 °C to +150 °C and supports PCB-mount derating of 0.025 W/°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - supports primary-side switching in 380 V DC bus and universal-input offline flyback/forward converters
R_DS(on) @ V_GS = 10 V	1.0 Ω - enables low conduction loss at 3.3 A continuous drain current, reducing I²R heating in high-duty-cycle applications
Q_g	38 nC - determines gate drive power requirement; compatible with standard MOSFET drivers delivering ≥1 A peak current
E_AS	290 mJ - allows unclamped inductive switching without external snubbers in hard-switched topologies
t_r/t_f	15 ns / 14 ns - supports >100 kHz switching frequencies with minimal overlap loss in PWM control stages
R_thJC	1.7 °C/W - enables efficient heat transfer to heatsink via exposed drain pad, critical for thermally constrained SMD layouts
I_D @ T_C = 100 °C	3.5 A - defines usable continuous current under real-world board-level thermal conditions with moderate heatsinking

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad (pin 2), 3-terminal configuration (G-D-S), and 1.7 mm profile - optimized for high-power density PCB designs requiring >3 W dissipation in SMD form factor.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input	Receives 10 V logic-level signal; 5.7 nC Q_gs ensures fast turn-on with minimal Miller effect
Drain (D)	High-side power output	Exposed metal pad (pin 2) serves as primary thermal path and high-current return; connects directly to PCB copper pour
Source (S)	Reference node	Low-inductance source connection (L_S = 7.5 nH) minimizes ringing during fast switching transitions

Key Features

Feature	Design Value
Repetitive avalanche rated	7.4 mJ EAR enables robustness against transient overloads in inductive load switching without external protection
Dynamic dV/dt immunity	4.0 V/ns rating prevents false turn-on during high-slew-rate voltage transients in high-noise SMPS environments
Fast switching	10 ns t_d(on), 38 ns t_d(off) and 14 ns fall time support high-frequency operation with low switching loss
Low internal inductance	L_D = 4.5 nH and L_S = 7.5 nH reduce voltage overshoot and EMI generation during hard switching
RoHS-compliant lead-free	IRF730STRRPbF variant meets JEDEC J-STD-609 Category 1a marking and Pb-free soldering requirements (300 °C peak)

Applications

AC-DC Power Supplies	DC-DC Converters
Use Scenario: Primary-side switch in 65–100 W offline flyback converters with universal AC input (85–265 V_AC). IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary winding during PWM on-time. Use Value: 400 V V_DS withstands reflected output voltage plus leakage spike; 290 mJ E_AS absorbs unclamped inductive energy without failure.	Use Scenario: Isolated forward converter primary switch in industrial 48 V input systems driving 12 V/5 V outputs. IC Role / Device Role / Timing Role: Main power switch synchronizing with transformer reset and duty cycle modulation. Use Value: 1.0 Ω R_DS(on) limits conduction loss at 3.3 A load; 38 nC Q_g enables efficient gate drive at 200 kHz switching.
Motor Drive Stages	Lighting Ballasts
Use Scenario: Half-bridge upper-leg switch in 100–200 W BLDC motor controllers for HVAC blowers and pumps. IC Role / Device Role / Timing Role: High-side switching element handling back-EMF and regenerative currents during commutation. Use Value: Body diode t_rr = 270–530 ns and Q_rr = 1.8–2.2 μC minimize reverse recovery losses during freewheeling.	Use Scenario: Resonant half-bridge switch in electronic CFL and LED driver ballasts operating above 25 kHz. IC Role / Device Role / Timing Role: Hard-switched resonant tank driver requiring stable dV/dt immunity and low Q_gd/Q_gs ratio. Use Value: 22 nC Q_gd and 4.0 V/ns dV/dt rating prevent spurious turn-on during zero-crossing transitions in resonant circuits.

AC-DC Power Supplies

DC-DC Converters

Use Scenario: Primary-side switch in 65–100 W offline flyback converters with universal AC input (85–265 V_AC).

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary winding during PWM on-time.

Use Value: 400 V V_DS withstands reflected output voltage plus leakage spike; 290 mJ E_AS absorbs unclamped inductive energy without failure.

Use Scenario: Isolated forward converter primary switch in industrial 48 V input systems driving 12 V/5 V outputs.

IC Role / Device Role / Timing Role: Main power switch synchronizing with transformer reset and duty cycle modulation.

Use Value: 1.0 Ω R_DS(on) limits conduction loss at 3.3 A load; 38 nC Q_g enables efficient gate drive at 200 kHz switching.

Motor Drive Stages

Lighting Ballasts

Use Scenario: Half-bridge upper-leg switch in 100–200 W BLDC motor controllers for HVAC blowers and pumps.

IC Role / Device Role / Timing Role: High-side switching element handling back-EMF and regenerative currents during commutation.

Use Value: Body diode t_rr = 270–530 ns and Q_rr = 1.8–2.2 μC minimize reverse recovery losses during freewheeling.

Use Scenario: Resonant half-bridge switch in electronic CFL and LED driver ballasts operating above 25 kHz.

IC Role / Device Role / Timing Role: Hard-switched resonant tank driver requiring stable dV/dt immunity and low Q_gd/Q_gs ratio.

Use Value: 22 nC Q_gd and 4.0 V/ns dV/dt rating prevent spurious turn-on during zero-crossing transitions in resonant circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK40Z	400 V V_DS, 3.5 A I_D, 1.5 Ω R_DS(on), Zener-protected gate, TO-220 package	Lower current rating and higher on-resistance; requires through-hole mounting and external gate protection	Preferred where gate robustness against overvoltage is prioritized over SMD integration and thermal performance
IXTP4N50D2	500 V V_DS, 4.0 A I_D, 1.4 Ω R_DS(on), TO-220FP package, no avalanche rating	Higher voltage margin but no repetitive avalanche capability; lower thermal conductivity than D2PAK	Selected when system requires >400 V headroom and avalanche stress is mitigated by circuit design

Compared with STP4NK40Z and IXTP4N50D2, the IRF730S offers superior SMD thermal management (1.7 °C/W R_thJC), verified repetitive avalanche operation (7.4 mJ EAR), and lower R_DS(on) (1.0 Ω), making it optimal for space-constrained, high-reliability high-voltage switching where board-level thermal resistance must be minimized.

Availability

IRF730S is available at Aetrix Electronics and suitable for AC-DC power supplies, DC-DC converters, and motor drive stages requiring stable component supply with full RoHS compliance and traceable manufacturing history.

Supply support for IRF730S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability across industrial and automotive markets.

The IRF730S belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for primary-side switching in offline power conversion systems demanding high dV/dt immunity, avalanche robustness, and SMD thermal scalability.

FAQ

What is the maximum continuous drain current for IRF730S at 100 °C case temperature?

The IRF730S supports 3.5 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects practical thermal limits under PCB-mounted conditions and must be validated with actual board layout and heatsinking. The IRF730S achieves this while maintaining 1.0 Ω R_DS(on) at V_GS = 10 V, ensuring predictable conduction loss in thermally constrained designs.

Does IRF730S have avalanche capability, and is it rated for repetitive operation?

Yes, the IRF730S is explicitly rated for repetitive avalanche operation with E_AR = 7.4 mJ and I_AR = 5.5 A, per the Absolute Maximum Ratings table. It also supports single-pulse avalanche energy up to 290 mJ. These ratings are validated under defined test conditions (V_DD = 50 V, L = 16 mH, R_g = 25 Ω) and apply directly to the IRF730S, not just the broader family. The IRF730S leverages this capability in unclamped inductive switching without external snubbers.

What is the gate threshold voltage range for IRF730S, and how does it affect drive requirements?

The IRF730S has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA, ensuring reliable turn-on with standard 10 V gate drivers. This range avoids unintended conduction at low noise margins while enabling full enhancement at nominal drive. The IRF730S does not require logic-level (≤5 V) drive, distinguishing it from lower-voltage variants - its 10 V drive optimizes R_DS(on) and switching speed simultaneously.

How is thermal performance characterized for IRF730S in surface-mount applications?

The IRF730S specifies R_thJC = 1.7 °C/W (junction-to-case) and R_thJA = 40 °C/W (junction-to-ambient, PCB mount), measured on a 1" square FR-4 board. Its D2PAK package uses the exposed drain pad as the primary thermal path, enabling direct thermal coupling to inner-layer copper pours or external heatsinks. This makes the IRF730S suitable for applications where >3 W dissipation must be managed in SMD format - a key differentiator versus TO-220 alternatives.

What are the body diode characteristics of IRF730S, and how do they impact hard-switched applications?

The IRF730S body diode exhibits t_rr = 270–530 ns and Q_rr = 1.8–2.2 μC at T_J = 25 °C, I_F = 3.5 A, and dI/dt = 100 A/μs. Its V_SD = 1.6 V at I_S = 5.5 A ensures low forward loss during freewheeling. These parameters directly influence switching loss and EMI in hard-switched topologies like half-bridges - the IRF730S's controlled recovery behavior reduces voltage overshoot and improves efficiency compared to non-optimized MOSFETs.

IRF730S Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1Ohm @ 3.3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF730S FAQ

1.How can I place an order for IRF730S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF730S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF730S reliable?

The price and inventory of IRF730S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF730S is usually 5 days.

3.What payment methods are accepted for IRF730S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF730S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF730S?

IRF730S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF730S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF730S?

For technical support, including IRF730S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF730S requirements.

6.How does Aetrix verify that IRF730S is sourced from the original manufacturer or authorized distributors?

All IRF730S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF730S meets industry standards.

7.What is the process for return or replacement of IRF730S?

All IRF730S units undergo pre-shipment inspection (PSI). If there is an issue with IRF730S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF730S part is unused and in its original packaging.

Return procedure for IRF730S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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