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Vishay Siliconix IRF730SPBF
- Part No.:
- IRF730SPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF730SPBF.pdf
- Description:
- MOSFET N-CH 400V 5.5A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,024
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Product details
Overview
IRF730SPBF from Vishay Siliconix is a 400 V, 5.5 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, optimized for high-voltage switching in offline SMPS, motor drives, and DC-DC converters with RDS(on) = 1.0 Ω at VGS = 10 V, Qg = 38 nC, and repetitive avalanche rating of 7.4 mJ.
For engineers reviewing the IRF730SPBF datasheet, IRF730SPBF pinout, IRF730SPBF application, or IRF730SPBF equivalent, this page delivers verified electrical parameters, thermal derating behavior, body diode recovery characteristics (trr = 270–530 ns), gate charge profile, and real-world mounting guidance for PCB-level thermal management.
Technical Context
This third-generation planar MOSFET employs ruggedized die construction with dynamic dV/dt capability up to 4.0 V/ns and supports unclamped inductive switching with EAS = 290 mJ (single-pulse) and IAR = 5.5 A (repetitive avalanche). Its low internal source/drain inductance (LS = 7.5 nH, LD = 4.5 nH) enables fast, clean switching transitions.
The device operates across -55 °C to +150 °C junction temperature range, features VGS(th) = 2.0–4.0 V, exhibits normalized RDS(on) drift of +0.54 V/°C, and maintains stable IDSS ≤ 25 μA at VDS = 400 V and TJ = 25 °C - confirming suitability for high-reliability industrial power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 400 V - supports 380 VAC rectified input rails with margin for surge and ringing |
| RDS(on) | 1.0 Ω @ VGS = 10 V - determines conduction loss in continuous-current applications |
| Qg | 38 nC - defines total gate drive energy required per switching cycle |
| tr/tf | 15 ns / 14 ns - enables >1 MHz switching in hard-switched topologies when driven properly |
| EAS | 290 mJ - allows safe operation under unclamped inductive load conditions without snubbers |
| RthJC | 1.7 °C/W - enables 74 W dissipation at TC = 25 °C with minimal heatsinking |
| ID (TC = 100 °C) | 3.5 A - usable current limit in thermally constrained surface-mount layouts |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) in standard SMD-220 outline per JEDEC TO-263AB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives 10 V logic-level drive; threshold 2.0–4.0 V; ±20 V absolute max rating |
| D (Drain) | High-side power output | Connected to exposed thermal pad; carries full load current and withstands 400 V transients |
| S (Source) | Power return reference | Common node for gate drive return and current sensing; tied to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 7.4 mJ - enables robust operation in inductive load switching without external clamping |
| Dynamic dV/dt immunity | 4.0 V/ns - prevents false turn-on during high-slew-rate voltage transients |
| Low gate charge (Qg) | 38 nC - reduces driver power loss and simplifies gate driver selection |
| Fast body diode recovery | trr = 270–530 ns - minimizes reverse recovery loss in synchronous or freewheeling configurations |
| Surface-mount D2PAK | Thermal resistance RthJC = 1.7 °C/W - supports high-power density without through-hole mounting |
Applications
| Offline AC-DC Adapters | Industrial Motor Drives |
|---|---|
|
Use Scenario: Primary-side switch in 30–60 W flyback converters operating from universal AC input (85–265 VAC). IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding; duty-cycle modulated by PWM controller. Use Value: 400 V VDS rating accommodates 380 VDC bus with safety margin; 1.0 Ω RDS(on) limits conduction loss at 5.5 A peak current. |
Use Scenario: Half-bridge leg in 100–500 W BLDC motor controllers for HVAC blowers and pumps. IC Role / Device Role / Timing Role: Low-side or high-side switching element in three-phase inverter stage; commutated at 10–20 kHz. Use Value: Repetitive avalanche capability handles inductive kickback during PWM dead-time; fast tr/tf enables efficient high-frequency operation. |
| DC-DC Boost Converters | UPS Inverters |
|
Use Scenario: Boost switch in 48 V input telecom rectifiers stepping up to 380 VDC intermediate bus. IC Role / Device Role / Timing Role: Main power switch in continuous-conduction-mode (CCM) boost topology; gated by digital controller. Use Value: Qg = 38 nC balances switching loss vs. gate drive complexity; low Coss (170 pF) reduces capacitive turn-off loss. |
Use Scenario: Output H-bridge switch in line-interactive UPS delivering 1 kVA sine-wave output. IC Role / Device Role / Timing Role: High-reliability power switch handling bidirectional energy flow and fault current interruption. Use Value: 290 mJ single-pulse avalanche energy absorbs short-circuit energy during overload; 150 °C max TJ ensures operation under sustained thermal stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK50ZFP | 500 V VDS, 4.0 A ID, RDS(on) = 1.4 Ω, Zener-protected gate | Higher voltage margin but lower current and higher on-resistance; less suitable for high-current 400 V designs | Prefer when overvoltage protection and 500 V headroom outweigh conduction loss concerns |
| FQP4N40 | 400 V VDS, 4.0 A ID, RDS(on) = 1.8 Ω, TO-220 package | Same voltage rating but lower current and higher RDS(on); through-hole only, no surface-mount thermal pad | Choose only if legacy TO-220 layout constraints prevent D2PAK adoption |
Compared with STP4NK50ZFP and FQP4N40, the IRF730SPBF delivers superior current capability (5.5 A), lowest RDS(on) (1.0 Ω), and surface-mount thermal performance - making it optimal for space-constrained, high-efficiency 400 V power stages where PCB area and thermal management are critical.
Availability
IRF730SPBF is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial motor drives, and DC-DC boost converters requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.
Supply support for IRF730SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal efficiency.
The IRF730SPBF belongs to Vishay's third-generation power MOSFET family designed specifically for high-voltage, medium-current industrial and consumer power conversion systems demanding avalanche robustness and surface-mount thermal scalability.
FAQ
What is the maximum continuous drain current for IRF730SPBF at 100 °C case temperature?
The IRF730SPBF supports a continuous drain current of 3.5 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the D2PAK package under sustained high-temperature operation and must be validated against actual PCB layout and ambient conditions. The IRF730SPBF datasheet confirms this rating applies with proper heatsinking and airflow.
Does IRF730SPBF have avalanche capability, and how is it rated?
Yes, the IRF730SPBF is repetitively avalanche rated with EAR = 7.4 mJ and IAR = 5.5 A, and single-pulse avalanche energy EAS = 290 mJ. These values are measured under defined test conditions (VDD = 50 V, L = 16 mH, Rg = 25 Ω) and enable reliable operation in inductive switching circuits without external clamping. The IRF730SPBF specification sheet documents these ratings in Section "Absolute Maximum Ratings".
What is the gate threshold voltage range for IRF730SPBF, and how does it affect drive requirements?
The IRF730SPBF has a gate-source threshold voltage VGS(th) ranging from 2.0 V to 4.0 V at ID = 250 μA, confirming compatibility with standard 10 V gate drivers. This range ensures reliable turn-on while avoiding unintended conduction from noise. Drive circuits must supply ≥10 V to achieve full RDS(on) = 1.0 Ω; the IRF730SPBF does not support logic-level (≤5 V) gate drive.
How does the body diode performance of IRF730SPBF impact its use in synchronous rectification or freewheeling?
The IRF730SPBF body diode exhibits trr = 270–530 ns and Qrr = 1.8–2.2 μC at TJ = 25 °C, enabling moderate-frequency freewheeling with manageable reverse recovery loss. However, its VSD = 1.6 V at IS = 5.5 A indicates higher forward drop than dedicated Schottky diodes - so the IRF730SPBF is best suited for non-synchronous or low-duty-cycle freewheeling rather than high-efficiency synchronous rectification.
What thermal resistance values apply to IRF730SPBF in surface-mount applications?
In surface-mount applications, the IRF730SPBF has RthJC = 1.7 °C/W (junction-to-case) and RthJA = 40 °C/W (junction-to-ambient, PCB mount). These values assume mounting on a 1" square FR-4 PCB per Vishay's recommended footprint. The low RthJC enables effective heat transfer to an external heatsink or copper pour, while the RthJA guides thermal design for standalone board-level operation. The IRF730SPBF thermal data is confirmed in the "Thermal Resistance Ratings" section of its datasheet.
IRF730SPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1Ohm @ 3.3A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 74W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF730SPBF FAQ
1.How can I place an order for IRF730SPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF730SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF730SPBF reliable?
The price and inventory of IRF730SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF730SPBF is usually 5 days.
3.What payment methods are accepted for IRF730SPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF730SPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF730SPBF?
IRF730SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF730SPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF730SPBF?
For technical support, including IRF730SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF730SPBF requirements.
6.How does Aetrix verify that IRF730SPBF is sourced from the original manufacturer or authorized distributors?
All IRF730SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF730SPBF meets industry standards.
7.What is the process for return or replacement of IRF730SPBF?
All IRF730SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF730SPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF730SPBF part is unused and in its original packaging.
Return procedure for IRF730SPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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