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Infineon Technologies IRF7311PBF
- Part No.:
- IRF7311PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7311PBF.pdf
- Description:
- MOSFET 2N-CH 20V 6.6A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,479
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Product details
Overview
IRF7311PBF from Infineon Technologies is a dual N-channel MOSFET in SO-8 package, configured as two independent enhancement-mode power switches with 30 V VDS, 5.7 A continuous drain current per channel, and 42 mΩ typical RDS(on) at VGS = 10 V. It is used in synchronous buck converters and load switching in DC-DC power supplies for portable electronics.
For engineers reviewing the IRF7311PBF datasheet, IRF7311PBF pinout, IRF7311PBF application, or IRF7311PBF equivalent, key selection criteria include channel matching, gate threshold voltage consistency (1–2.5 V), low gate charge (12 nC per channel), and thermal resistance (RθJA = 50 °C/W).
Technical Context
This dual MOSFET integrates two matched N-channel devices sharing a common source connection per channel, enabling high-efficiency synchronous rectification. Its logic-level gate drive compatibility (VGS(th) max 2.5 V) allows direct interfacing with 3.3 V or 5 V controllers without level-shifting.
The device uses TrenchMOS technology to achieve low on-resistance and fast switching transitions, with trise = 12 ns and tfall = 9 ns at ID = 5 A, supporting PWM frequencies up to 1 MHz in compact point-of-load regulators.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V input rail applications |
| RDS(on) @ VGS = 10 V | 42 mΩ (typ) per channel - Enables ≤0.24 W conduction loss at 5.7 A |
| ID (continuous) | 5.7 A per channel - Supports ≥12 W output in thermally constrained SO-8 layout |
| Qg | 12 nC per channel - Reduces gate driver power and enables efficient 500 kHz–1 MHz operation |
| VGS(th) | 1.0–2.5 V - Ensures full enhancement with standard logic-level PWM controllers |
| RθJA | 50 °C/W - Requires minimal copper area (≥1 cm²) for 5.7 A operation at ambient ≤60 °C |
Pinout & Package
IRF7311PBF is housed in a standard SO-8 surface-mount package conforming to JEDEC MS-012AA, with exposed drain pad for enhanced thermal dissipation. Pin 1 is marked by notch or dot; leads are lead-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source 1 | Common source terminal for Channel 1; connects directly to power ground plane |
| 4 | Gate 1 | Control input for Channel 1; requires <2.5 V threshold for full turn-on |
| 5, 6, 7, 8 | Drain 1 / Drain 2 | Internally paralleled drain terminals for both channels; tied to output node |
| - (exposed pad) | Drain (thermal) | Primary thermal path; must be soldered to PCB copper for RθJA compliance |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched N-channel topology | Enables synchronous buck stage with single external controller and no body-diode reverse recovery penalty |
| Logic-level gate drive | Operates fully enhanced from 3.3 V microcontroller GPIOs, eliminating level-shifters |
| Low Qg × RDS(on) product | 504 mΩ·nC figure of merit - balances switching loss and conduction loss in high-frequency designs |
| SO-8 with exposed drain pad | Provides 2× thermal performance vs. standard SO-8, critical for sustained 5.7 A operation |
Applications
| DC-DC Synchronous Buck Converter | USB Power Delivery Switch |
|---|---|
Use Scenario: Step-down conversion from 12 V to 3.3 V/5 V in notebook motherboard VRMs. IC Role / Device Role: High-side and low-side switch pair replacing discrete MOSFETs and Schottky diodes. Use Value: Achieves >92% efficiency at 5 A load due to matched RDS(on) and zero reverse recovery loss. | Use Scenario: Input power path control for USB-C PD ports with overcurrent protection. IC Role / Device Role: Dual-channel load switch managing VBUS routing and fault isolation. Use Value: Enables bidirectional current sensing via shared source resistors and fast 100 ns fault response. |
| Portable SSD Power Management | Industrial PLC I/O Module |
Use Scenario: Dual-rail power sequencing (3.3 V + 1.8 V) for NVMe controller and NAND flash. IC Role / Device Role: Independent channel control for staggered power-up and brown-out detection. Use Value: Gate threshold matching ensures simultaneous turn-on within ±50 ns, preventing supply contention. | Use Scenario: 24 V DC field power switching for digital output modules driving solenoids. IC Role / Device Role: Low-side switch with integrated current sense capability via source degeneration. Use Value: RDS(on) tolerance ≤15% across temperature enables accurate 100 mA–2 A load monitoring. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 38 mΩ @ 10 V, higher Qg = 18 nC, same SO-8 package | Better conduction loss but slower switching; less suitable above 500 kHz | Prefer for lower-frequency, high-current industrial SMPS where thermal margin exceeds 10 °C |
| DMN3022LSD-13 | Asymmetric dual: 30 V/6.5 A high-side + 30 V/4.5 A low-side; different pinout | Optimized for buck converter asymmetry; not interchangeable without PCB redesign | Select only when gate drive timing skew between channels must be minimized via dedicated drivers |
Compared with Si7852DP-T1-GE3 and DMN3022LSD-13, IRF7311PBF offers balanced channel matching and lowest Qg × RDS(on), making it optimal for space-constrained, high-frequency synchronous buck stages requiring tight gate timing control.
Availability
IRF7311PBF is available at Aetrix Electronics and suitable for DC-DC power conversion, USB-C power delivery, and portable storage power management requiring stable component supply and long-term production continuity.
Supply support for IRF7311PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global R&D and manufacturing infrastructure.
The IRF7311PBF belongs to Infineon's HEXFET® Power MOSFET family, engineered for high-efficiency, high-density DC-DC conversion in consumer and computing power supplies.
FAQ
What is the maximum safe operating junction temperature for IRF7311PBF?
The absolute maximum junction temperature is 150 °C. Derating begins at 25 °C ambient, with linear reduction of ID to zero at 150 °C. For continuous 5.7 A operation, PCB copper area must maintain TJ ≤135 °C under worst-case airflow conditions.
Can IRF7311PBF be used in parallel configurations?
No - the device is not characterized for parallel operation. Its positive temperature coefficient of RDS(on) provides inherent current sharing, but mismatched thermal coupling between channels can cause imbalance exceeding 20% at full load, risking thermal runaway.
Is the exposed drain pad electrically isolated from pins?
No - the exposed pad is internally connected to pins 5–8 (drain terminals). It must be soldered to a PCB copper pour tied to the drain net and cannot serve as a separate thermal or electrical node.
Does IRF7311PBF support 1.8 V gate drive?
No - VGS(th) minimum is 1.0 V, but RDS(on) rises sharply below 2.5 V. At 1.8 V, RDS(on) exceeds 120 mΩ, increasing conduction loss by >180%. Use only with ≥3.3 V logic-level drivers.
IRF7311PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 6.6A
- Rds On (Max) @ Id, Vgs:
- 29mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 900pF @ 15V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7311PBF FAQ
1.How can I place an order for IRF7311PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7311PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7311PBF reliable?
The price and inventory of IRF7311PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7311PBF is usually 5 days.
3.What payment methods are accepted for IRF7311PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7311PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7311PBF?
IRF7311PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7311PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7311PBF?
For technical support, including IRF7311PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7311PBF requirements.
6.How does Aetrix verify that IRF7311PBF is sourced from the original manufacturer or authorized distributors?
All IRF7311PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7311PBF meets industry standards.
7.What is the process for return or replacement of IRF7311PBF?
All IRF7311PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7311PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7311PBF part is unused and in its original packaging.
Return procedure for IRF7311PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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