UMW IRF7311TR

Overview

IRF7311 from International Rectifier is a dual N-channel enhancement-mode MOSFET in SO-8 package, rated for 20 V V_DS, 6.6 A continuous drain current at 25°C, and 0.029 Ω R_DS(on) at V_GS = 4.5 V. It features fully avalanche-rated ruggedness, fast switching (t_r = 17–25 ns), and integrated body diodes with 52–77 ns reverse recovery time-used in synchronous buck converters, load switches, and battery protection circuits.

For engineers reviewing the IRF7311 datasheet, IRF7311 pinout, IRF7311 application, or IRF7311 equivalent, key selection criteria include low R_DS(on) at 2.7 V gate drive, dual-die thermal coupling in SO-8, avalanche energy rating (E_AS = 100 mJ), and compatibility with vapor-phase and IR reflow soldering.

Technical Context

The IRF7311 integrates two identical N-channel MOSFETs sharing a common source connection per channel (D1/S1/G1 and D2/S2/G2), enabling half-bridge or dual-switch topologies without discrete pairing. Its gate threshold voltage (V_GS(th) = 0.7 V min) supports logic-level drive from 2.7 V microcontrollers, while the 18–27 nC total gate charge ensures efficient PWM control up to several hundred kHz.

Thermal design leverages the modified SO-8 leadframe for improved R_θJA = 62.5°C/W on 1-in² copper, and its 150°C max junction temperature supports operation in industrial ambient environments. The device's 5.0 V/ns di/dt-rated body diode enables reliable freewheeling in high-dv/dt DC-DC stages.

Key Specifications

Pinout & Package

IRF7311 uses an SO-8 surface-mount package with exposed thermal pad (JEDEC MS-012AA compliant), optimized for enhanced thermal dissipation and dual-die integration. Leadframe modifications improve board-level heat spreading and support multiple devices in compact layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with Si7852DP and DMN3025LSD, IRF7311 uniquely balances low gate-threshold drive, proven avalanche ruggedness, and SO-8 thermal performance-making it optimal for industrial DC-DC and battery safety designs where reliability under transient stress is mandatory.

Availability

IRF7311 is available at Aetrix Electronics and suitable for DC-DC converters, USB-C load switching, and industrial battery protection circuits requiring stable component supply across multi-year production cycles.

Supply support for IRF7311 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) was a pioneer in power MOSFET design, specializing in high-efficiency, ruggedized silicon solutions for industrial and automotive markets.

The HEXFET® Fifth Generation product line-including IRF7311-was engineered specifically for high-density, thermally constrained power management in DC-DC regulation, motor control, and battery interface applications.

FAQ

What is the maximum continuous drain current for each channel at 70°C ambient?

Each channel supports 5.3 A continuous drain current at T_A = 70°C with SO-8 mounting on 1 in² copper. This reflects thermal derating from 6.6 A at 25°C, based on R_θJA = 62.5°C/W and T_J(max) = 150°C. Actual current depends on PCB copper area and airflow.

Can IRF7311 be used in a back-to-back configuration for AC switching?

No-IRF7311 is a dual N-channel MOSFET with no integrated body-diode blocking in reverse direction. For AC solid-state relay applications, discrete N+P pairs or purpose-built AC switches (e.g., Infineon BCR402) are required. Its body diodes conduct only from source to drain.

Is the exposed pad electrically isolated or internally connected?

The exposed pad (pins 7 and 8) is internally connected to both S1 and S2 terminals. It must be soldered to a PCB thermal pad tied to system ground or low-side reference to ensure proper thermal transfer and EMI suppression-floating the pad degrades R_θJA by >40%.

Does IRF7311 require gate resistors for stability in high-frequency PWM?

Yes-a 5–10 Ω series gate resistor is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 200 pF) and PCB inductance. Without it, overshoot exceeding ±15 V may occur during 20+ ns edge transitions, risking gate oxide damage at V_GS > ±12 V absolute maximum.