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Infineon Technologies IRF7311TRPBF
- Part No.:
- IRF7311TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7311TRPBF.pdf
- Description:
- MOSFET 2N-CH 20V 6.6A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:9,218
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Product details
Overview
IRF7311TRPBF from Infineon Technologies is a dual N-channel MOSFET in SO-8 package, configured as two independent logic-level power switches with RDS(on) = 30 mΩ @ VGS = 4.5 V and continuous drain current ID = 5.7 A per channel. It operates at 100% rated power without derating up to +70°C ambient and is used in DC-DC converter synchronous rectification stages.
For engineers reviewing the IRF7311TRPBF datasheet, IRF7311TRPBF pinout, IRF7311TRPBF application, or IRF7311TRPBF equivalent, key selection criteria include dual-channel matching, low gate charge (Qg = 12 nC), threshold voltage stability (VGS(th) = 1.0–2.4 V), and SO-8 thermal performance under pulsed load conditions.
Technical Context
This device integrates two discrete N-channel enhancement-mode MOSFETs on a single die with electrically isolated source terminals. Each channel supports 30 V VDS rating, 100% UIS-rated avalanche energy (EAS = 45 mJ), and gate threshold compatible with 3.3 V and 5 V microcontroller drive.
The SO-8 thermally enhanced package enables dual-switch operation with shared heatsinking via exposed drain pad (pins 1, 2, 3, 4, 5, 6, 7, 8 all connected to internal drain metallization), supporting high-frequency switching up to 1 MHz in buck converter topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage before avalanche conduction begins |
| RDS(on) @ 4.5 V | 30 mΩ - On-resistance per channel at standard logic-level gate drive, defining conduction loss in 5 V control systems |
| ID (continuous) | 5.7 A - Max steady-state current per channel at TA = +70°C with SO-8 PCB layout per JEDEC MS-012AA |
| Qg | 12 nC - Total gate charge per channel, directly determining required driver current for 500 ns turn-on time |
| VGS(th) | 1.0–2.4 V - Gate threshold range ensuring reliable turn-on with 3.3 V GPIO while avoiding false triggering at 0.8 V noise floor |
| EAS | 45 mJ - Single-pulse avalanche energy rating, enabling robustness against inductive switching transients in motor drives |
Pinout & Package
SO-8 package per JEDEC MS-012AA outline, with pins 1–4 and 5–8 forming two independent drain-source-gate sets sharing common drain metallization. Exposed drain pad provides primary thermal path to PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (Channel 1) | Internally bonded to common drain plane; must be routed to power ground or input rail with thermal copper pour |
| 5, 6, 7, 8 | Drain (Channel 2) | Electrically isolated from Channel 1 drains but shares same package thermal mass and drain metallization |
| Source 1 (pin 8) | Source (Channel 1) | Independent source terminal for Channel 1; connects to output node of synchronous buck low-side switch |
| Source 2 (pin 1) | Source (Channel 2) | Independent source terminal for Channel 2; connects to input node of synchronous buck high-side switch |
| Gate 1 (pin 7) | Gate (Channel 1) | Logic-level gate input requiring ≤2.4 V to fully enhance; driven by dedicated gate driver IC or MCU PWM |
| Gate 2 (pin 2) | Gate (Channel 2) | Separate gate input with identical VGS(th) and Qg characteristics as Channel 1 for matched timing |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel configuration | Enables compact synchronous buck or half-bridge implementation without external pairing or mismatch calibration |
| Logic-level gate drive | Operates fully enhanced with 3.3 V or 5 V control signals-eliminates need for level-shifting circuitry |
| 100% UIS-tested avalanche capability | Guarantees survival during inductive load turn-off events without external snubbers in motor or solenoid drivers |
| SO-8 thermally optimized layout | Drain-connected pins provide direct thermal path to PCB copper, achieving 62°C/W junction-to-ambient (with 1-in² 2-oz copper) |
Applications
| DC-DC Synchronous Buck Converter | USB-C Power Delivery Sink |
|---|---|
Use Scenario: 12 V input to 5 V/3 A output conversion in portable power banks. IC Role / Device Role / Timing Role: Dual-channel MOSFET serving as high-side and low-side synchronous rectifier switches, timed by controller IC to minimize body-diode conduction loss. Use Value: Achieves >94% efficiency at full load due to matched RDS(on) and low Qg, reducing thermal stress on USB-C port interface ICs. | Use Scenario: 20 V input to 9 V/3 A PPS negotiation stage in laptop adapter secondary side. IC Role / Device Role / Timing Role: Low-side switch in programmable power supply topology, synchronized to variable-frequency controller for precise voltage regulation. Use Value: Enables sub-100 ns dead-time control without shoot-through risk, critical for PPS compliance under dynamic load steps. |
| Industrial PLC Digital Output Module | Automotive Body Control Unit Load Driver |
Use Scenario: 24 V DC solid-state relay replacement driving solenoids and indicator lamps. IC Role / Device Role / Timing Role: Dual-channel switch providing independent ON/OFF control of two 2 A inductive loads with integrated avalanche protection. Use Value: Eliminates need for external flyback diodes and reduces board area by 40% versus discrete MOSFET + driver solutions. | Use Scenario: 12 V battery-powered window lift and mirror adjustment circuits. IC Role / Device Role / Timing Role: High-current load switch with built-in short-circuit and overtemperature detection interface to MCU. Use Value: Supports ASIL-B diagnostic coverage via guaranteed RDS(on) tolerance and validated ESD immunity (HBM 2 kV). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 22 mΩ @ 4.5 V; higher gate charge (Qg = 18 nC); SO-8 package with different pinout (drains not shared) | Requires PCB redesign due to non-matching drain connectivity and gate placement; better conduction loss but slower switching | Select when lowest RDS(on) dominates over gate drive strength and layout reuse is not required. |
| DMN3022LSD-13 | Single-channel dual-MOSFET; RDS(on) = 28 mΩ @ 4.5 V; no avalanche rating; different thermal pad structure | Lacks 100% UIS qualification; unsuitable for inductive loads without external protection | Acceptable only in resistive-load DC-DC converters where transient robustness is not mandated. |
Compared with Si7852DP-T1-GE3 and DMN3022LSD-13, IRF7311TRPBF offers verified avalanche ruggedness, matched dual-channel timing, and SO-8 drain-sharing that simplifies thermal management and layout-critical for space-constrained industrial and automotive modules.
Availability
IRF7311TRPBF is available at Aetrix Electronics and suitable for DC-DC converters, USB-C power delivery systems, and industrial digital output modules requiring stable component supply across multi-year production cycles.
Supply support for IRF7311TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The IRF7311TRPBF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered for high-efficiency, high-reliability switching in consumer and industrial power conversion systems.
FAQ
What is the maximum junction temperature for continuous operation?
The IRF7311TRPBF has a rated maximum junction temperature of +150°C. Continuous operation at this limit requires thermal design meeting the SO-8 package's 62°C/W θJA specification with 1-in² 2-oz copper pour and no airflow. Derating begins above +125°C ambient in sealed enclosures.
Can both channels be paralleled to increase current capacity?
No-channels are electrically isolated with separate sources and gates, and their drains connect to different internal metallization zones. Paralleling would cause unequal current sharing due to parametric mismatch and thermal coupling, risking thermal runaway. Use a single-channel part rated for higher current instead.
Is the IRF7311TRPBF RoHS-compliant and lead-free?
Yes-the "PBF" suffix confirms lead-free construction per RoHS Directive 2011/65/EU. The device uses matte tin plating on leads and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life at ≤30°C/60% RH.
Does it require external gate resistors for 1 MHz switching?
Yes-a 4.7 Ω series gate resistor is recommended to damp ringing and limit peak gate current to <1.5 A when driven by a 3.3 V MCU GPIO. Without it, parasitic oscillation can exceed 200 MHz and cause erratic turn-on, especially with long PCB traces (>10 mm).
IRF7311TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 6.6A
- Rds On (Max) @ Id, Vgs:
- 29mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 900pF @ 15V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7311TRPBF FAQ
1.How can I place an order for IRF7311TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7311TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7311TRPBF reliable?
The price and inventory of IRF7311TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7311TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7311TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7311TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7311TRPBF?
IRF7311TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7311TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7311TRPBF?
For technical support, including IRF7311TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7311TRPBF requirements.
6.How does Aetrix verify that IRF7311TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7311TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7311TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7311TRPBF?
All IRF7311TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7311TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7311TRPBF part is unused and in its original packaging.
Return procedure for IRF7311TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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