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Infineon Technologies IRF7313PBF
- Part No.:
- IRF7313PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7313PBF.pdf
- Description:
- MOSFET 2N-CH 30V 6.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,922
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Product details
Overview
IRF7313PBF from Infineon Technologies is a dual N-channel MOSFET in SO-8 package, configured as two independent logic-level power switches with RDS(on) = 24 mΩ @ VGS = 4.5 V and 19 mΩ @ VGS = 10 V per channel, rated for 30 V VDS and 5.8 A continuous drain current (TJ = 150°C), commonly used in synchronous buck converters and dual low-side motor drive stages.
For engineers reviewing the IRF7313PBF datasheet, IRF7313PBF pinout, IRF7313PBF application, or IRF7313PBF equivalent, key selection criteria include channel independence, gate threshold compatibility with 3.3 V/5 V controllers, thermal resistance (RθJA = 50 °C/W), avalanche energy rating (EAS = 25 mJ), and SO-8 footprint compatibility with space-constrained DC-DC designs.
Technical Context
This device integrates two discrete N-channel enhancement-mode MOSFETs in a single SO-8 package, sharing no internal connection between channels - terminals G1/S1/D1 and G2/S2/D2 are fully isolated. Each channel exhibits a typical gate threshold voltage of 1.7 V and maximum of 2.5 V, enabling direct drive from standard logic outputs without level-shifting.
The MOSFETs feature optimized body diode recovery (trr = 35 ns) and low gate charge (Qg = 12 nC @ VGS = 10 V), supporting high-frequency switching up to 1 MHz in PWM-regulated power stages while maintaining low conduction and switching losses under 150°C junction operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-to-source blocking voltage; supports 24 V rail systems with margin. |
| RDS(on) @ 4.5 V | 24 mΩ - Enables ≥92% efficiency at 5 A load in 5 V gate-driven half-bridge output stage. |
| ID (continuous) | 5.8 A @ TJ = 150°C - Sustains full-rated current in thermally constrained PCB layouts with 1-in² 2-oz copper. |
| Qg | 12 nC @ VGS = 10 V - Reduces gate driver power loss and enables fast turn-on (<15 ns) with 1 Ω source impedance. |
| RθJA | 50 °C/W - Predicts ~75°C junction rise above ambient at 2 W dissipation on standard FR-4 with no heatsink. |
| EAS | 25 mJ - Withstands single-pulse inductive energy from 100 µH choke discharging at 5 A without failure. |
Pinout & Package
IRF7313PBF uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AA), 4.9 × 6.0 mm footprint, 1.27 mm lead pitch, with exposed drain pad for enhanced thermal performance. Pin numbering follows top-view orientation with Pin 1 at bottom-left corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Controls first N-MOSFET; accepts 0–15 V logic-compatible input; requires <12 nC charge for full enhancement. |
| 2 (S1) | Source of Channel 1 | Reference node for Channel 1; tied to local ground or low-side switch node; carries full 5.8 A load current. |
| 3 (D1) | Drain of Channel 1 | High-side connection point for Channel 1; electrically isolated from D2; connects to input rail or inductor node. |
| 4 (D2) | Drain of Channel 2 | Independent high-side terminal for second MOSFET; not internally connected to D1; supports dual-switch topology. |
| 5 (S2) | Source of Channel 2 | Separate return path for Channel 2; enables independent current sensing or floating configuration when S2 is not grounded. |
| 6 (G2) | Gate of Channel 2 | Second logic-input terminal; identical electrical characteristics to G1; allows asynchronous or synchronized dual-gate control. |
| 7, 8 (D1/D2 tab) | Common Drain Thermal Pad | Exposed copper pad beneath package ties both drains electrically and thermally; must be soldered to PCB pour for RθJA compliance. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel MOSFETs | Eliminates need for two discrete SO-8 devices; saves 30% board area vs. discrete implementation. |
| Logic-level gate drive (VGS(th) ≤ 2.5 V) | Direct interface with 3.3 V microcontrollers and PWM ICs without external level shifters or gate drivers. |
| Low RDS(on) at 4.5 V (24 mΩ) | Reduces conduction loss by >40% vs. standard 30 V MOSFETs at 5 V gate drive in portable power applications. |
| Enhanced body diode dV/dt immunity | Prevents spurious turn-on during high-slew-rate commutation in half-bridge configurations. |
| Lead-free and RoHS-compliant | Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1); suitable for reflow assembly without baking. |
Applications
| DC-DC Synchronous Buck Converter | USB-C Power Delivery Load Switch |
|---|---|
Use Scenario: Step-down conversion from 12 V to 5 V/3.3 V in compact embedded power supplies. IC Role / Device Role: Dual low-side switch replacing discrete N-MOSFET pair; one channel drives main power FET, second handles auxiliary rail or enable path. Use Value: Achieves >94% efficiency at 3 A load with minimal thermal derating due to shared thermal pad and matched RDS(on). | Use Scenario: Inrush current limiting and hot-swap protection for USB-C PD sink ports. IC Role / Device Role: Dual-channel load switch where G1/S1/D1 controls VBUS path and G2/S2/D2 manages CC logic line power sequencing. Use Value: Independent gate control enables staggered turn-on to limit peak inrush; SO-8 footprint fits tight Type-C connector spacing. |
| Brushed DC Motor H-Bridge Driver | LED Matrix Row Driver |
Use Scenario: Bidirectional 24 V motor control in battery-powered tools and robotics. IC Role / Device Role: Two low-side switches in H-bridge configuration; paired with external high-side P-MOSFETs or bootstrap drivers. Use Value: Matched channel parameters ensure balanced forward/reverse torque; 150°C rating supports intermittent 10 A stall currents. | Use Scenario: Multiplexed driving of 8×8 red/green LED matrix in industrial status panels. IC Role / Device Role: Row-select switch array where each channel sinks current from 4–8 parallel LEDs (max 5.8 A total). Use Value: Low RDS(on) minimizes voltage drop across row lines, preserving brightness uniformity across 64-LED grid. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 18 mΩ @ 4.5 V (lower), Qg = 14.5 nC (higher), SO-8 package with same pinout. | Better conduction loss but higher gate drive demand; less suitable for 3.3 V-only controllers. | Prefer when efficiency > gate drive simplicity; verify controller VOH ≥ 4.5 V. |
| DMN3028LSD-13 | RDS(on) = 28 mΩ @ 4.5 V (higher), EAS = 18 mJ (lower), same SO-8 footprint and pinout. | Lower avalanche robustness; acceptable only in non-inductive or clamped loads. | Select only if cost-sensitive and system lacks unclamped inductive transients. |
Compared with Si7852DP-T1-GE3 and DMN3028LSD-13, IRF7313PBF offers the best balance of gate drive compatibility, thermal performance, and ruggedness for general-purpose dual-switching - especially where 3.3 V logic control and 25 mJ avalanche capability are required.
Availability
IRF7313PBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and USB-C load switching requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for IRF7313PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
The HEXFET® Power MOSFET product line - including IRF7313PBF - was designed for high-efficiency, high-reliability switching in consumer, industrial, and computing power supplies where thermal density and gate drive simplicity are critical.
FAQ
Is IRF7313PBF suitable for 3.3 V microcontroller gate drive?
Yes. Its maximum gate threshold voltage is 2.5 V, and it delivers RDS(on) = 24 mΩ at VGS = 4.5 V and 35 mΩ at VGS = 3.3 V - sufficient for most 3.3 V logic outputs driving ≤2 A loads. For full 5.8 A rating, 4.5 V or higher gate drive is recommended.
What is the maximum safe operating temperature for continuous use?
The absolute maximum junction temperature is 150°C. Continuous operation at this temperature requires PCB layout with ≥1 in² of 2-oz copper connected to the exposed drain pad and ambient ≤75°C. Derating to 125°C junction is advised for >10-year reliability in industrial environments.
Can the two channels be paralleled to increase current capacity?
No. The channels are electrically isolated but not matched for current sharing - differences in VGS(th) and RDS(on) cause uneven current distribution. Paralleling risks thermal runaway. Use a single higher-current MOSFET instead.
Does IRF7313PBF have integrated ESD protection on gate terminals?
Yes. It includes on-chip gate protection diodes rated to ±2 kV HBM per JEDEC JESD22-A114. However, handling precautions (grounded wrist strap, anti-static mat) remain mandatory during assembly to prevent latent damage below visible failure thresholds.
IRF7313PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 6.5A
- Rds On (Max) @ Id, Vgs:
- 29mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 650pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7313PBF FAQ
1.How can I place an order for IRF7313PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7313PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7313PBF reliable?
The price and inventory of IRF7313PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7313PBF is usually 5 days.
3.What payment methods are accepted for IRF7313PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7313PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7313PBF?
IRF7313PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7313PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7313PBF?
For technical support, including IRF7313PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7313PBF requirements.
6.How does Aetrix verify that IRF7313PBF is sourced from the original manufacturer or authorized distributors?
All IRF7313PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7313PBF meets industry standards.
7.What is the process for return or replacement of IRF7313PBF?
All IRF7313PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7313PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7313PBF part is unused and in its original packaging.
Return procedure for IRF7313PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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