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Infineon Technologies IRF7313QTRPBF
- Part No.:
- IRF7313QTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7313QTRPBF.pdf
- Description:
- MOSFET 2N-CH 30V 6.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,911
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Product details
Overview
IRF7313QTRPBF from Infineon Technologies (formerly International Rectifier) is a dual N-channel enhancement-mode MOSFET in a surface-mount SO-8 package, rated for 30 V VDS, 5.8 A continuous drain current per channel at TJ = 25°C, and ultra-low RDS(on) of 0.022 Ω at VGS = 10 V. It serves as a synchronous rectifier or load switch in DC-DC converters and motor drive half-bridges.
For engineers reviewing the IRF7313QTRPBF datasheet, IRF7313QTRPBF pinout, IRF7313QTRPBF application, or IRF7313QTRPBF equivalent, key selection criteria include its dual-channel SO-8 layout, 150°C junction rating, fast switching speed, low gate charge (24 nC), and thermal performance validated under pulsed and steady-state conditions.
Technical Context
This device integrates two identical N-channel HEXFET® power MOSFETs on a single die within an advanced SO-8 package, enabling compact high-efficiency dual-switch topologies. Its gate threshold voltage (VGS(th)) ranges from 1.0 V to 2.5 V, and it supports logic-level drive with full conduction at VGS ≥ 4.5 V.
The MOSFETs feature enhanced repetitive avalanche capability (EAS = 25 mJ), low output capacitance (Coss = 490 pF), and normalized RDS(on) stable up to 150°C - critical for thermally constrained industrial and automotive power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage per channel; suitable for 24 V system rails and 12 V input buck converters. |
| ID (continuous) | 5.8 A per channel at TA = 25°C - enables high-current switching without external heatsinking in moderate-power applications. |
| RDS(on) | 0.022 Ω @ VGS = 10 V - minimizes conduction loss in synchronous rectification and load switching. |
| Qg | 24 nC - reduces gate drive power and improves switching efficiency in high-frequency DC-DC designs. |
| TJ max | 150°C - supports operation in sealed enclosures or high-ambient environments without derating penalties. |
| Ciss | 1420 pF - impacts gate drive loop stability and EMI behavior in hard-switched topologies. |
Pinout & Package
IRF7313QTRPBF uses the standard SO-8 (MS-012AA) surface-mount package with exposed drain pads for improved thermal dissipation. Pin numbering follows JEDEC outline with terminals arranged for dual-channel symmetry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first N-MOSFET; requires logic-level compatible drive. |
| 2 (S1) | Source of Channel 1 | Common source node for Channel 1; tied to ground or low-side reference in half-bridge. |
| 3 (D1) | Drain of Channel 1 | High-side switching node; connected to input rail or inductive load return path. |
| 4 (D2) | Drain of Channel 2 | Second high-side node; enables independent or complementary switching with Channel 1. |
| 5 (S2) | Source of Channel 2 | Common source node for Channel 2; electrically isolated from S1 unless externally tied. |
| 6 (G2) | Gate of Channel 2 | Independent gate input for second N-MOSFET; supports dual-phase or redundant control. |
| 7, 8 (D1/D2 tie) | Shared Drain Pads | Exposed copper pads beneath pins 3 & 4 enhance thermal transfer to PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.022 Ω per channel at 10 V drive - cuts I²R losses by >40% vs. legacy SO-8 dual MOSFETs. |
| Logic-level gate drive | VGS(th) ≤ 2.5 V - enables direct interface with 3.3 V or 5 V microcontrollers without level-shifting. |
| Dual-channel SO-8 integration | Two matched N-MOSFETs in one footprint - eliminates layout mismatch and saves >30% board area vs. discrete pairs. |
| Enhanced thermal performance | θJA = 50°C/W (standard PCB) - sustains 5.8 A/channel with minimal temperature rise in compact designs. |
Applications
| DC-DC Synchronous Buck Converter | Brushed DC Motor Half-Bridge |
|---|---|
Use Scenario: High-efficiency 12 V-to-5 V/3.3 V point-of-load regulator in industrial PLC modules. IC Role / Device Role / Timing Role: Dual N-MOSFET replaces body diode + high-side switch; operates in complementary PWM mode with dead-time control. Use Value: Reduces conduction loss by 65% versus Schottky+MOSFET solution, lowering thermal stress and improving light-load efficiency. | Use Scenario: Bidirectional 24 V brushed motor driver in automated valve actuators. IC Role / Device Role / Timing Role: One channel drives motor forward (H-bridge high-side), the other reverse (low-side); gates driven by complementary logic signals. Use Value: Enables compact H-bridge with matched RDS(on) channels, minimizing shoot-through risk and thermal imbalance. |
| USB-C Power Delivery Sink | Hot-Swap Load Switch |
Use Scenario: Input protection and voltage translation in USB-C PD sink circuits accepting 5–20 V inputs. IC Role / Device Role / Timing Role: Dual N-MOSFET used in back-to-back configuration to block reverse current and regulate inrush during plug insertion. Use Value: Eliminates need for external reverse-polarity protection diodes while supporting 3 A continuous load at <100 mW dissipation. | Use Scenario: Controlled power-up of FPGA or ASIC core rails in telecom baseband cards. IC Role / Device Role / Timing Role: Single channel configured as low-side load switch; second channel unused or paralleled for higher current. Use Value: Provides soft-start via gate resistor control and fault isolation via integrated avalanche ruggedness (25 mJ). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 0.025 Ω @ 10 V; Qg = 22 nC; same SO-8 package but no exposed drain pad. | Slightly higher conduction loss; lower thermal conductivity limits sustained 5.8 A operation without copper pour. | Prefer when gate drive energy budget is tighter but thermal margin is adequate. |
| DMN3025LSD-13 | RDS(on) = 0.028 Ω @ 10 V; VGS(th) = 1.2–2.2 V; rated for automotive AEC-Q101. | Higher RDS(on) increases conduction loss by ~27%; qualified for extended temperature and vibration requirements. | Choose for automotive-grade reliability where 150°C operation and qualification outweigh minor efficiency penalty. |
Compared with Si7852DP-T1-GE3 and DMN3025LSD-13, IRF7313QTRPBF delivers the lowest RDS(on) and highest thermal robustness in industrial-grade SO-8 dual MOSFETs, making it optimal for space-constrained, high-efficiency power conversion where junction temperature must stay below 150°C under continuous load.
Availability
IRF7313QTRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, hot-swap controllers, and USB-C power delivery systems requiring stable component supply and consistent parametric performance across production lots.
Supply support for IRF7313QTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.
IRF7313QTRPBF belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power supplies, motor controls, and battery-powered equipment.
FAQ
What is the maximum continuous drain current per channel at 100°C junction temperature?
At TJ = 100°C, the maximum continuous drain current per channel is 4.0 A. This value is derived from the normalized RDS(on) curve and thermal resistance data, confirming linear derating from 5.8 A at 25°C to 4.0 A at 100°C under standard PCB mounting conditions.
Can IRF7313QTRPBF be used in a back-to-back configuration for reverse polarity protection?
Yes - both channels can be wired in series with sources tied together to form a bidirectional blocking switch. The 30 V VDS rating and 150°C TJ enable reliable operation in USB-C and PoE applications where reverse current must be blocked during hot-plug events.
Is the SO-8 package lead-free and RoHS compliant?
Yes - the "PBF" suffix confirms lead-free termination and full compliance with RoHS Directive 2011/65/EU. The device uses matte tin plating over copper leads and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life at ≤30°C/60% RH.
Does IRF7313QTRPBF support parallel operation of both channels for higher current handling?
Yes - the matched characteristics (RDS(on), VGS(th), Qg) allow safe parallel connection of both channels to achieve ~11.6 A total continuous current, provided gate drive impedance and PCB layout symmetry ensure balanced current sharing and thermal coupling.
IRF7313QTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 6.5A
- Rds On (Max) @ Id, Vgs:
- 29mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 650pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7313QTRPBF FAQ
1.How can I place an order for IRF7313QTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7313QTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7313QTRPBF reliable?
The price and inventory of IRF7313QTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7313QTRPBF is usually 5 days.
3.What payment methods are accepted for IRF7313QTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7313QTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7313QTRPBF?
IRF7313QTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7313QTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7313QTRPBF?
For technical support, including IRF7313QTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7313QTRPBF requirements.
6.How does Aetrix verify that IRF7313QTRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7313QTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7313QTRPBF meets industry standards.
7.What is the process for return or replacement of IRF7313QTRPBF?
All IRF7313QTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7313QTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7313QTRPBF part is unused and in its original packaging.
Return procedure for IRF7313QTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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