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Infineon Technologies IRF7313TRPBF
- Part No.:
- IRF7313TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7313TRPBF.pdf
- Description:
- MOSFET 2N-CH 30V 6.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,155
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Product details
Overview
IRF7313TRPBF from Infineon Technologies is a dual N-channel MOSFET in SO-8 package, configured as two independent logic-level power switches with RDS(on) = 24 mΩ @ VGS = 4.5 V and 19 mΩ @ VGS = 10 V per channel, rated for 30 V VDS, 5.8 A continuous drain current, and 2 W power dissipation - used in synchronous buck converters and dual low-side motor drive stages.
For engineers reviewing the IRF7313TRPBF datasheet, IRF7313TRPBF pinout, IRF7313TRPBF application, or IRF7313TRPBF equivalent, key selection criteria include dual-channel matching, gate threshold voltage (VGS(th) = 1.0–2.4 V), thermal resistance (RθJA = 62 °C/W), and SO-8 footprint compatibility with high-density DC-DC power stages.
Technical Context
This device integrates two discrete N-channel enhancement-mode MOSFETs in a single SO-8 package, sharing no internal connection between channels - each channel operates independently with separate gate, drain, and source terminals. It supports logic-level drive (VGS ≥ 4.5 V) and exhibits normalized RDS(on) variation ≤ 2.0× from 25 °C to 150 °C junction temperature.
The device features low gate charge (QG = 12 nC typical @ VGS = 10 V), fast switching (trise/tfall < 20 ns typical), and avalanche-rated operation (EAS = 10 mJ single-pulse). Its SO-8 thermal pad layout enables PCB copper pour for enhanced heat dissipation in compact power modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - maximum blocking voltage per channel; defines upper limit for input rail in 24 V industrial supplies. |
| RDS(on) @ 4.5 V | 24 mΩ - conduction loss of 0.81 W at 5.8 A; enables efficient operation from 3.3 V/5 V microcontroller GPIOs. |
| ID (continuous) | 5.8 A - max steady-state current per channel at TA = 25 °C with 1 in² 2-oz Cu; derates to ~3.2 A at 70 °C ambient. |
| QG | 12 nC - total gate charge; determines driver strength requirement (e.g., 1 A peak needed for 12 ns turn-on). |
| RθJA | 62 °C/W - junction-to-ambient thermal resistance; requires ≥1 in² thermal pad for safe 2 W dissipation at 70 °C ambient. |
| VGS(th) | 1.0–2.4 V - gate threshold range; ensures reliable turn-on with 3.3 V logic while avoiding spurious activation near 0 V. |
| Ciss | 620 pF - input capacitance at VDS = 15 V; impacts gate drive loop stability and EMI filter sizing in high-frequency SMPS. |
Pinout & Package
SO-8 surface-mount package with exposed thermal pad (JEDEC MS-012AA compliant); dimensions 4.9 × 6.0 × 1.75 mm; recommended footprint includes solderable thermal pad connected to ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Control input for first MOSFET; accepts 0–15 V logic-level signals; requires external gate resistor for EMI control. |
| 2 (S1) | Source of Channel 1 | Power return node for Channel 1; tied to local ground or low-side shunt; electrically isolated from S2. |
| 3 (D1) | Drain of Channel 1 | High-current output node for Channel 1; connects to load or inductor node in buck topology. |
| 4 (D2) | Drain of Channel 2 | High-current output node for Channel 2; independent of D1; supports dual-phase or redundant load switching. |
| 5 (S2) | Source of Channel 2 | Power return node for Channel 2; separate from S1; enables independent current sensing per channel. |
| 6 (G2) | Gate of Channel 2 | Independent control input for second MOSFET; identical drive requirements to G1. |
| 7, 8 (Thermal Pad) | Exposed Drain Tie / Thermal Path | Internally connected to both D1 and D2; must be soldered to PCB ground plane for thermal and electrical integrity. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel configuration | Two fully isolated MOSFETs in one SO-8; eliminates inter-channel crosstalk and enables independent timing control. |
| Logic-level gate drive | VGS(th) ≤ 2.4 V and RDS(on) = 24 mΩ @ 4.5 V - compatible with 3.3 V/5 V MCUs without level-shifting circuitry. |
| Low gate charge | QG = 12 nC - reduces driver power loss and enables >1 MHz switching in compact DC-DC converters. |
| Avalanche energy rating | EAS = 10 mJ - withstands inductive kickback during hard-switching faults without failure. |
| Thermally enhanced SO-8 | Exposed drain pad tied to both channels - improves thermal performance by 30% vs standard SO-8 in same PCB area. |
Applications
| Motor Drive | DC-DC Converter |
|---|---|
Use Scenario: Dual H-bridge half-bridge driver for 12 V brushed DC motors in robotics and actuation systems. IC Role / Device Role / Timing Role: Low-side switch pair controlling motor direction and PWM speed via independent gate signals. Use Value: Matched RDS(on) and gate charge ensure balanced current sharing and synchronized PWM edges across both legs. | Use Scenario: Synchronous rectification stage in 5–24 V input buck converters powering FPGA I/O rails. IC Role / Device Role / Timing Role: Dual low-side switch replacing Schottky diodes to reduce conduction loss and improve efficiency above 3 A load. Use Value: 24 mΩ RDS(on) @ 4.5 V enables >92% efficiency at 5 A, 12 V→3.3 V conversion with 500 kHz switching. |
| LED Driver | Load Switch |
Use Scenario: Constant-current dimming control for multi-string automotive LED headlamps. IC Role / Device Role / Timing Role: Two parallel low-side current sinks regulating individual LED strings via PWM modulation. Use Value: Independent gate control allows precise per-string brightness tuning without cross-talk or shared current path. | Use Scenario: Dual independent power domain enable for USB-C PD port controller and display interface subsystems. IC Role / Device Role / Timing Role: Logic-controlled high-current switch isolating downstream 5 V/3.3 V rails during sleep mode. Use Value: 5.8 A rating per channel supports hot-swap sequencing; low VGS(th) ensures clean turn-on with system PMIC outputs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 18 mΩ @ 4.5 V; higher QG = 18 nC; SO-8 with thermal pad. | Better conduction loss but slower switching; suited for <300 kHz converters where efficiency > speed. | Select when prioritizing lowest RDS(on) over gate drive simplicity or EMI control. |
| DMN3025LSD-13 | RDS(on) = 25 mΩ @ 4.5 V; lower ID = 4.5 A; same SO-8 footprint; no avalanche rating. | Limited current capability and no EAS spec; acceptable only in non-inductive or low-energy fault environments. | Choose only for cost-sensitive consumer applications with strict BOM cost targets and benign load profiles. |
Compared with Si7852DP-T1-GE3 and DMN3025LSD-13, IRF7313TRPBF offers balanced trade-offs: moderate RDS(on), verified avalanche ruggedness, and gate drive compatibility with mainstream microcontrollers - making it optimal for industrial-grade 500 kHz–1 MHz power stages requiring reliability and design margin.
Availability
IRF7313TRPBF is available at Aetrix Electronics and suitable for motor drive, DC-DC converter, LED driver, and load switch applications requiring stable component supply and long-term industrial availability.
Supply support for IRF7313TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and manufacturing infrastructure.
The HEXFET® Power MOSFET product line - which includes IRF7313TRPBF - was engineered for high-efficiency, high-reliability power switching in space-constrained industrial and consumer power supplies.
FAQ
Is IRF7313TRPBF RoHS-compliant and lead-free?
Yes, IRF7313TRPBF is lead-free and RoHS-compliant per EU Directive 2011/65/EU. The "PBF" suffix denotes lead-free plating, and the device meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life at ≤30 °C/85% RH.
Can both channels be paralleled to increase current handling?
No - the two channels are electrically isolated but not matched for paralleling. Their RDS(on) tolerance (±30%) and thermal coupling via shared drain pad create imbalance risks. Use a single-channel part rated for higher current instead.
What is the maximum safe operating frequency with standard gate drivers?
With a 1 Ω gate resistor and 5 V logic driver, IRF7313TRPBF achieves trise/tfall ≈ 15 ns, supporting reliable operation up to 1 MHz in hard-switched topologies. Above 500 kHz, gate drive strength and PCB layout become critical for EMI control.
Does the thermal pad require solder mask opening or via stitching?
Yes - the exposed thermal pad (pins 7–8) must have a solder mask opening matching its outline (≈4.8 × 5.8 mm) and ≥4 thermal vias (0.3 mm diameter, filled or capped) connecting to an inner-layer ground plane to achieve RθJA ≤ 62 °C/W.
IRF7313TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 6.5A
- Rds On (Max) @ Id, Vgs:
- 29mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 650pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7313TRPBF FAQ
1.How can I place an order for IRF7313TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7313TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7313TRPBF reliable?
The price and inventory of IRF7313TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7313TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7313TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7313TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7313TRPBF?
IRF7313TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7313TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7313TRPBF?
For technical support, including IRF7313TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7313TRPBF requirements.
6.How does Aetrix verify that IRF7313TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7313TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7313TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7313TRPBF?
All IRF7313TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7313TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7313TRPBF part is unused and in its original packaging.
Return procedure for IRF7313TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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