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Infineon Technologies IRF7313TRPBF-1
- Part No.:
- IRF7313TRPBF-1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7313TRPBF-1.pdf
- Description:
- MOSFET 2N-CH 30V 6.5A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:5,947
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Product details
Overview
IRF7313TRPBF-1 from Infineon Technologies (formerly International Rectifier) is a dual N-channel MOSFET in SO-8 package, configured as two independent logic-level power switches with 30 V VDS, 6.5 A continuous drain current at 25°C, and 29 mΩ RDS(on) at VGS = 10 V. It is used in synchronous buck converters, battery protection circuits, and load switching in portable power management systems.
For engineers reviewing the IRF7313TRPBF-1 datasheet, IRF7313TRPBF-1 pinout, IRF7313TRPBF-1 application, or IRF7313TRPBF-1 equivalent, key selection criteria include gate threshold voltage compatibility with 3.3 V/5 V controllers, low gate charge (22 nC typical), thermal performance under pulsed load conditions, and SO-8 footprint reuse across multi-vendor designs.
Technical Context
This dual MOSFET integrates two matched N-channel enhancement-mode devices sharing a common source connection per channel (D1/S1/G1 and D2/S2/G2), enabling half-bridge or independent high-side/low-side switching. Its logic-level gate drive supports direct interfacing with microcontrollers and PWM controllers without level-shifting.
The device features 100% Rg tested, MSL1 moisture sensitivity rating, and industrial temperature qualification (−40°C to +150°C junction). Normalized RDS(on) remains ≤1.5× nominal up to 125°C, supporting stable conduction in thermally constrained PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 12 V input rail applications with margin against transients. |
| RDS(on) max @ VGS = 10 V | 29 mΩ - Enables ≤185 mW conduction loss at 6.5 A, critical for thermally limited DC-DC stages. |
| ID @ TA = 25°C | 6.5 A - Continuous current rating assuming adequate copper area and ambient cooling. |
| Qg typical | 22 nC - Determines gate driver power requirement and switching transition time in 500 kHz–1 MHz converters. |
| Package | SO-8 - Standard 8-pin surface-mount outline (JEDEC MS-012AA), compatible with automated placement and reflow. |
| Moisture Sensitivity Level | MSL1 - No floor life limitation; safe for standard SMT assembly without baking. |
Pinout & Package
SO-8 package (JEDEC MS-012AA), 5.0 mm × 4.0 mm body, 1.27 mm pitch, 1.75 mm max height. Lead-free, halogen-free, RoHS compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Logic-level control input; threshold ≈ 1.0–2.4 V; requires <22 nC charge for full turn-on. |
| 2 (S1) | Source of Channel 1 | Reference node for Channel 1; internally tied to Pin 3 (common source configuration not present). |
| 3 (D1) | Drain of Channel 1 | Main current output path; electrically isolated from Channel 2's drain (Pin 5). |
| 4 (G2) | Gate of Channel 2 | Independent gate input; identical drive requirements to Pin 1. |
| 5 (D2) | Drain of Channel 2 | Second independent high-current output; no internal connection to Pin 3. |
| 6 (S2) | Source of Channel 2 | Reference node for Channel 2; separate from Pin 2 - true dual independent MOSFETs. |
| 7, 8 | Thermal pad / exposed drain ties | Internally connected to respective drains (Pins 3 & 5); must be soldered to PCB copper for thermal relief. |
Key Features
| Feature | Design Value |
|---|---|
| Industry-standard SO-8 footprint | Enables drop-in replacement across multiple vendors without PCB redesign. |
| Logic-level gate drive (VGS(th) ≤ 2.4 V) | Direct interface with 3.3 V GPIO or PWM ICs; eliminates need for gate driver ICs in low-power apps. |
| Low Qg (22 nC typ.) | Reduces switching losses and gate driver stress in high-frequency DC-DC converters (>500 kHz). |
| MSL1 rating and industrial qualification | Supports zero-bake manufacturing and long-term reliability in automotive body electronics and industrial controls. |
Applications
| Battery Protection Circuit | Synchronous Buck Converter |
|---|---|
Use Scenario: Overcurrent and short-circuit protection in 2-cell Li-ion packs (8.4 V max). IC Role / Device Role / Timing Role: Dual N-MOSFET used as back-to-back switch to block reverse current and enable/disable charging/discharging paths. Use Value: 29 mΩ RDS(on) limits voltage drop to <185 mV at 6.5 A, preserving pack efficiency and thermal headroom. | Use Scenario: High-efficiency 5 V → 1.2 V point-of-load conversion in FPGA or SoC power rails. IC Role / Device Role / Timing Role: Upper and lower switches in synchronous rectification topology, driven by external controller. Use Value: Matched channel characteristics and low Qg reduce shoot-through risk and improve light-load efficiency vs. discrete single-FET solutions. |
| USB Power Delivery Switch | Motor Driver Half-Bridge |
Use Scenario: Load switching for USB-C PD sink applications requiring 5–20 V input and 3 A continuous current. IC Role / Device Role / Timing Role: Independent channel control enables programmable current limiting and hot-swap sequencing. Use Value: SO-8 layout allows compact dual-switch implementation with shared thermal pad, reducing board area vs. two SO-8 singles. | Use Scenario: Low-voltage brushed DC motor control in robotics and portable tools (≤12 V supply). IC Role / Device Role / Timing Role: One channel drives high-side, the other low-side in H-bridge configuration with external bootstrap or level-shift circuitry. Use Value: 30 V VDS withstands inductive kickback; 6.5 A rating supports peak stall currents up to 10 A with pulse-width derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 23 mΩ @ 10 V; Qg = 20 nC; same SO-8, but higher ID (7.5 A) | Better conduction loss at high current; tighter gate charge spec improves switching consistency. | Preferred when minimizing conduction loss dominates over cost or legacy footprint constraints. |
| DMN3025LSD-13 | RDS(on) = 25 mΩ @ 10 V; Qg = 24 nC; SO-8, but only rated to 125°C TJ(max) | Limited thermal margin in sustained high-temp environments vs. IRF7313TRPBF-1's 150°C rating. | Suitable for consumer-grade applications where ambient stays below 70°C and cost is primary driver. |
Compared with Si7852DP-T1-GE3 and DMN3025LSD-13, the IRF7313TRPBF-1 offers balanced trade-offs: industrial temperature rating and proven reliability in power management, while maintaining competitive RDS(on) and gate drive simplicity without requiring gate resistors or external level shifters.
Availability
IRF7313TRPBF-1 is available at Aetrix Electronics and suitable for battery protection circuits, synchronous buck converters, USB power delivery switches, and motor driver half-bridges requiring stable component supply and long-lifecycle support.
Supply support for IRF7313TRPBF-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired International Rectifier in 2015 and maintains its power MOSFET product lines with full technical documentation, reliability data, and application support.
The HEXFET® family - to which IRF7313TRPBF-1 belongs - was originally designed for high-efficiency, high-reliability power conversion in computing, industrial, and automotive subsystems, emphasizing low RDS(on), fast switching, and rugged avalanche capability.
FAQ
What is the maximum continuous drain current for each channel at 100°C case temperature?
At TC = 100°C, the maximum continuous drain current per channel is 4.0 A, based on the SO-8 package's thermal resistance (RθJA ≈ 62°C/W) and 150°C maximum junction temperature. Derating curves confirm 4.0 A is the safe limit with 2 oz copper and 1 in² thermal pad.
Is IRF7313TRPBF-1 suitable for use in a high-side switch configuration?
Yes - each channel operates as an independent N-channel MOSFET. For high-side switching, a gate driver capable of providing VGS ≥ 10 V above the source (i.e., bootstrap or floating supply) is required. The device itself has no integrated level shifter or charge pump.
Does the SO-8 package include an exposed thermal pad, and how should it be connected?
Yes - Pins 7 and 8 are internally connected to the respective drain terminals (Pin 3 and Pin 5). They must be soldered to a dedicated PCB copper pour tied to the corresponding drain net to achieve specified RθJA and power dissipation ratings.
What is the typical gate threshold voltage range, and how does it affect 3.3 V logic compatibility?
VGS(th) is specified from 1.0 V to 2.4 V. At 3.3 V drive, both channels fully enhance with >4 A ID capability, though RDS(on) rises to ~45 mΩ. For optimal efficiency, 4.5–10 V gate drive is recommended per datasheet characterization curves.
IRF7313TRPBF-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 6.5A (Ta)
- Rds On (Max) @ Id, Vgs:
- 29mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 650pF @ 25V
- Power - Max:
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
IRF7313TRPBF-1 FAQ
1.How can I place an order for IRF7313TRPBF-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7313TRPBF-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7313TRPBF-1 reliable?
The price and inventory of IRF7313TRPBF-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7313TRPBF-1 is usually 5 days.
3.What payment methods are accepted for IRF7313TRPBF-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7313TRPBF-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7313TRPBF-1?
IRF7313TRPBF-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7313TRPBF-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7313TRPBF-1?
For technical support, including IRF7313TRPBF-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7313TRPBF-1 requirements.
6.How does Aetrix verify that IRF7313TRPBF-1 is sourced from the original manufacturer or authorized distributors?
All IRF7313TRPBF-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7313TRPBF-1 meets industry standards.
7.What is the process for return or replacement of IRF7313TRPBF-1?
All IRF7313TRPBF-1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7313TRPBF-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7313TRPBF-1 part is unused and in its original packaging.
Return procedure for IRF7313TRPBF-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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