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Infineon Technologies IRF7313TRPBFXTMA1
- Part No.:
- IRF7313TRPBFXTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7313TRPBFXTMA1.pdf
- Description:
- MOSFET 2N-CH 30V 6.5A 8DSO-902
- Quantity:
- Payment:
- Shipping:
Inventory:5,818
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Product details
Overview
IRF7313TRPBFXTMA1 from Infineon Technologies is a dual N-channel MOSFET in SO-8 package, configured as two independent enhancement-mode power switches with 30 V VDS, 5.8 A continuous drain current per channel at TJ = 25°C, and 24 mΩ typical RDS(on) at VGS = 10 V. It is used in synchronous buck converters and high-side/low-side switching in DC-DC power supplies for portable electronics.
For engineers reviewing the IRF7313TRPBFXTMA1 datasheet, IRF7313TRPBFXTMA1 pinout, IRF7313TRPBFXTMA1 application, or IRF7313TRPBFXTMA1 equivalent, key selection criteria include dual-channel RDS(on) matching, gate charge (QG = 16 nC max), thermal resistance (RθJA = 50°C/W), and SO-8 footprint compatibility with board-level thermal management.
Technical Context
This device integrates two discrete N-channel MOSFETs in a single SO-8 package with shared source terminals (S1/S2) and isolated gates (G1/G2) and drains (D1/D2), enabling half-bridge or dual-switch topologies without external isolation. Its logic-level gate threshold (VGS(th) = 1.0–2.5 V) supports direct drive from 3.3 V or 5 V microcontrollers.
The MOSFETs feature fast switching characteristics (trise = 12 ns, tfall = 10 ns typ. at VGS = 10 V), low reverse recovery charge (Qrr = 12 nC), and avalanche-rated operation (EAS = 25 mJ), making it suitable for hard-switched and synchronous rectification applications up to 1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-to-source blocking voltage; defines upper limit of input voltage in buck or half-bridge stages. |
| RDS(on) @ VGS=10 V | 24 mΩ (typ) - Conduction loss per channel at full gate drive; determines I²R heating under 5.8 A DC load. |
| ID (continuous) | 5.8 A per channel at TA = 25°C - Steady-state current capability before thermal derating begins. |
| QG | 16 nC (max) - Total gate charge; directly impacts driver strength requirement and switching loss at 500 kHz–1 MHz. |
| RθJA | 50°C/W - Junction-to-ambient thermal resistance in standard SO-8 PCB layout; sets temperature rise under 1.5 W dissipation. |
| VGS(th) | 1.0–2.5 V - Gate threshold range; ensures reliable turn-on with 3.3 V logic-level controllers without level-shifting. |
| EAS | 25 mJ - Single-pulse avalanche energy rating; enables robustness against inductive switching transients in motor or solenoid drives. |
Pinout & Package
IRF7313TRPBFXTMA1 is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), 4.9 × 6.0 mm footprint, 1.75 mm height, with gull-wing leads and lead-free finish. Thermal pad is not present; heat dissipation relies on copper pour under drain pads (D1/D2).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Controls conduction of first N-MOSFET; requires <16 nC charge for full turn-on at 10 V. |
| 2 (S1) | Source of Channel 1 | Common source node for Channel 1; tied internally to S2 for dual-source configuration. |
| 3 (D2) | Drain of Channel 2 | High-current output terminal for second MOSFET; electrically isolated from D1. |
| 4 (S2) | Source of Channel 2 | Common source node for Channel 2; bonded to S1 - forms shared source pair. |
| 5 (D1) | Drain of Channel 1 | High-current output terminal for first MOSFET; independent of D2 for half-bridge use. |
| 6 (G2) | Gate of Channel 2 | Independent control input for second MOSFET; enables asynchronous or complementary drive. |
| 7 (S1/S2) | Shared Source Terminal | Single external pin connecting both internal sources; simplifies PCB routing in synchronous rectifiers. |
| 8 (D1/D2) | Drain Pair (not connected) | Not internally connected - D1 and D2 are isolated; pin 3 and pin 5 are separate drain outputs. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel topology | Enables compact half-bridge or dual-switch implementation without discrete pairing or layout mismatch. |
| Logic-level gate drive | VGS(th) ≤ 2.5 V allows direct interface with 3.3 V MCUs or PWM controllers without gate drivers. |
| Matched RDS(on) channels | Typical 24 mΩ per channel with tight process control ensures balanced current sharing in parallel or sync-rectifier modes. |
| Low Qgd/Qg ratio | 0.28 (typ) minimizes Miller-induced shoot-through risk during high-dv/dt transitions in bridge circuits. |
| SO-8 thermal performance | RθJA = 50°C/W with 1-in² 2-oz copper improves reliability over discrete SOT-23 alternatives in space-constrained DC-DC modules. |
Applications
| Portable USB-C PD Adapters | Synchronous Buck Converters |
|---|---|
Use Scenario: 20–65 W AC-DC adapters using active clamp flyback or buck-boost with secondary-side synchronous rectification. IC Role / Device Role / Timing Role: Dual N-MOSFET replaces Schottky diodes in rectifier stage; G1/G2 driven by dedicated SR controller with adaptive timing. Use Value: Reduces conduction loss by >40% vs. 40 V Schottky, enabling >94% efficiency at 3 A output with 5.8 A per-channel rating. | Use Scenario: Point-of-load (POL) converter supplying core voltage to FPGA or SoC in industrial edge devices. IC Role / Device Role / Timing Role: High-side and low-side switch in 300 kHz–1 MHz buck stage; D1/G1 = high-side, D2/G2 = low-side. Use Value: Matched RDS(on) and QG minimize dead-time losses and improve duty-cycle accuracy at light loads. |
| Motor Drive Half-Bridges | LED Driver Current Sinks |
Use Scenario: 12 V BLDC fan or small pump driver with integrated gate control and current sensing. IC Role / Device Role / Timing Role: One channel as high-side switch, other as low-side; S1/S2 tied to current-sense resistor. Use Value: Shared source enables Kelvin sense path; 24 mΩ RDS(on) limits sense resistor power loss to <0.3 W at 5 A. | Use Scenario: Constant-current LED string driver for architectural lighting with dimming via PWM. IC Role / Device Role / Timing Role: Low-side current sink for each LED channel; G1/G2 driven independently for multi-string control. Use Value: 5.8 A rating supports up to 6 strings of 1 A LEDs; low VGS(th) ensures stable dimming down to 0.5% duty cycle. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 18 mΩ @ 10 V (lower), QG = 22 nC (higher), SO-8 with exposed thermal pad. | Better conduction loss but higher switching loss; requires thermal pad layout for full rating. | Select when board has thermal pad and efficiency >95% is critical; avoid if using standard SO-8 land pattern. |
| DMN3028LSD-13 | RDS(on) = 28 mΩ @ 10 V (higher), QG = 12 nC (lower), same SO-8, no thermal pad. | Lower gate drive demand but higher conduction loss; better for 500 kHz+ switching where QG dominates. | Select when gate driver is weak or switching frequency exceeds 1 MHz; accept 5–8% higher conduction loss. |
Compared with Si7852DP-T1-GE3 and DMN3028LSD-13, IRF7313TRPBFXTMA1 offers balanced trade-off: mid-range RDS(on) and QG, no thermal pad dependency, and proven reliability in consumer-grade power stages - ideal for cost-sensitive, thermally constrained designs.
Availability
IRF7313TRPBFXTMA1 is available at Aetrix Electronics and suitable for portable power adapters, POL converters, motor drive half-bridges, and LED current sinks requiring stable component supply across production ramps and long-life programs.
Supply support for IRF7313TRPBFXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global R&D and manufacturing infrastructure.
IRF7313TRPBFXTMA1 belongs to Infineon's HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-density DC-DC conversion and motor control in consumer and industrial power systems.
FAQ
What is the maximum continuous drain current per channel at 100°C junction temperature?
At TJ = 100°C, the continuous drain current per channel is derated to 3.2 A, based on the normalized RDS(on) curve and thermal resistance (RθJA = 50°C/W). This value assumes SO-8 mounting on 1-in² 2-oz copper with still air convection and accounts for safe operating area (SOA) limits at VDS = 30 V.
Can IRF7313TRPBFXTMA1 be used in a bootstrap high-side configuration?
Yes - Channel 1 (G1/D1/S1) supports bootstrap gate drive: its VGS rating (±20 V) and 30 V VDS allow operation with floating high-side gate bias up to 30 V above source. The SO-8 layout permits standard bootstrap capacitor placement adjacent to pin 1 (G1) and pin 2 (S1).
Is the shared source (S1/S2) internally bonded or externally connected?
The S1 and S2 terminals are internally bonded to a common metal layer and exit the package as a single pin (pin 2) and a second pin (pin 4), both electrically identical. This dual-pin arrangement improves current handling and reduces source inductance compared to single-pin layouts, while maintaining layout flexibility.
Does this part meet RoHS and REACH compliance for EU market deployment?
Yes - IRF7313TRPBFXTMA1 carries "P" suffix indicating lead-free (Pb-free) construction and complies with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Certificate of Compliance is available from Infineon's official portal and is included with Aetrix Electronics' traceable shipments.
IRF7313TRPBFXTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 6.5A (Ta)
- Rds On (Max) @ Id, Vgs:
- 29mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 650pF @ 25V
- Power - Max:
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-DSO-8-902
IRF7313TRPBFXTMA1 FAQ
1.How can I place an order for IRF7313TRPBFXTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7313TRPBFXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7313TRPBFXTMA1 reliable?
The price and inventory of IRF7313TRPBFXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7313TRPBFXTMA1 is usually 5 days.
3.What payment methods are accepted for IRF7313TRPBFXTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7313TRPBFXTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7313TRPBFXTMA1?
IRF7313TRPBFXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7313TRPBFXTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7313TRPBFXTMA1?
For technical support, including IRF7313TRPBFXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7313TRPBFXTMA1 requirements.
6.How does Aetrix verify that IRF7313TRPBFXTMA1 is sourced from the original manufacturer or authorized distributors?
All IRF7313TRPBFXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7313TRPBFXTMA1 meets industry standards.
7.What is the process for return or replacement of IRF7313TRPBFXTMA1?
All IRF7313TRPBFXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7313TRPBFXTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7313TRPBFXTMA1 part is unused and in its original packaging.
Return procedure for IRF7313TRPBFXTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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