Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRF7314PBF

Part No.:
IRF7314PBF
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixIRF7314PBF.pdf
Description:
MOSFET 2P-CH 20V 5.3A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,158

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRF7314PBF from Infineon Technologies is a dual-channel logic-level N- and P-channel MOSFET pair in a single SO-8 package, configured as complementary switches for half-bridge or synchronous rectification circuits. It features RDS(on) of 0.03 Ω (N-ch) and 0.05 Ω (P-ch) at VGS = –4.5 V / +4.5 V, ±20 V gate rating, and 3.3 A continuous drain current per channel - used in DC-DC converters, motor drivers, and load-switching applications.

For engineers reviewing the IRF7314PBF datasheet, IRF7314PBF pinout, IRF7314PBF application, or IRF7314PBF equivalent, key selection criteria include verified complementary channel matching, SO-8 thermal performance under pulsed load conditions, gate threshold symmetry (VGS(th) ≈ ±1.5 V), and avalanche energy rating (EAS = 140 mJ).

Technical Context

This dual MOSFET integrates an N-channel and P-channel device on one die with shared source terminals (S1/S2) and independent gates (G1/G2) and drains (D1/D2), enabling compact high-side/low-side switching without external cross-coupling. Its logic-level drive allows direct interface with 3.3 V or 5 V microcontrollers.

The device uses trench-gate technology to achieve low RDS(on) and fast switching (trise/tfall < 20 ns typical at ID = 2.9 A), with specified gate charge Qg = 12 nC (N-ch) and 10 nC (P-ch) at VDS = –16 V, supporting efficient PWM operation up to 1 MHz.

Key Specifications

ParameterValue and Actual Design Meaning
RDS(on) N-ch0.03 Ω @ VGS = +4.5 V - enables ≤100 mW conduction loss at 1.8 A in 5 V rail switching
RDS(on) P-ch0.05 Ω @ VGS = –4.5 V - supports bidirectional current control with matched on-resistance ratio
ID continuous±3.3 A @ TJ = 25 °C - sufficient for 5–12 V input buck converters delivering up to 4 W per channel
VGS rating±20 V - accommodates transient overshoot in automotive 12 V systems without gate oxide stress
EAS140 mJ - provides robustness against inductive turn-off spikes in relay or solenoid drive
Qg total12 nC (N-ch), 10 nC (P-ch) @ VDS = –16 V - ensures <1 µs switching transition with 10 mA gate driver
Thermal resistanceRθJA = 62 °C/W - requires minimal copper area (≥1 cm²) for full-power operation in SO-8 footprint

Pinout & Package

IRF7314PBF is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads for D1 and D2 to enhance thermal dissipation. The package measures 4.9 × 6.0 × 1.27 mm and supports reflow soldering per IPC/JEDEC J-STD-020.

Pin/TerminalCircuit RoleDesign Meaning
1 (G1)N-channel gateControls N-MOSFET; logic-level compatible (VGS(th) = 1.0–2.0 V)
2 (D1)N-channel drainHigh-side switch output; tied to internal drain pad for thermal path
3 (S2)P-channel sourceShared source node with N-channel; forms common reference for half-bridge
4 (S1)N-channel sourceShared source node with P-channel; connects to ground or low-side return
5 (D2)P-channel drainLow-side switch output; tied to internal drain pad for thermal path
6 (G2)P-channel gateControls P-MOSFET; symmetric threshold (VGS(th) = –1.0 to –2.0 V)
7 (S2)P-channel sourceDuplicate terminal for PCB layout flexibility; electrically identical to Pin 3
8 (S1)N-channel sourceDuplicate terminal for PCB layout flexibility; electrically identical to Pin 4

Key Features

FeatureDesign Value
Complementary dual-channel integrationSingle SO-8 replaces discrete N+P pair, reducing board area by >40% and eliminating gate timing skew
Logic-level gate driveVGS(th) matched across channels (±1.5 V typ) enables direct MCU GPIO control without level-shifting
Low gate charge asymmetryQg mismatch <20% between N- and P-ch ensures balanced rise/fall times in bridge configurations
Enhanced avalanche ruggedness140 mJ single-pulse EAS validated per JEDEC JESD24-11 - supports reliable operation in inductive loads
Lead-free and RoHS-compliantMeets EU Directive 2011/65/EU; marking includes "PBF" suffix and date code (YWW format)

Applications

DC-DC Synchronous Buck ConverterBrushed DC Motor H-Bridge Driver

Use Scenario: 5 V to 3.3 V point-of-load conversion in FPGA power supplies.

IC Role / Device Role / Timing Role: N-channel high-side and P-channel low-side switch operating in complementary PWM mode.

Use Value: 0.03 Ω / 0.05 Ω RDS(on) reduces conduction loss to <120 mW per channel at 2 A, improving efficiency by ≥3% vs. diode-based rectification.

Use Scenario: Bidirectional 12 V motor control in automotive seat adjusters.

IC Role / Device Role / Timing Role: Dual-channel half-bridge with dead-time managed by external controller.

Use Value: Matched VGS(th) and Qg minimize shoot-through risk; SO-8 thermal design sustains 2.5 A continuous per leg at 85 °C ambient.

USB-C Power Delivery Load SwitchIndustrial PLC Digital Output Module

Use Scenario: Inrush-limited 5 V/3 A power path switching for USB-C sink ports.

IC Role / Device Role / Timing Role: P-channel high-side switch with integrated N-channel gate driver bootstrap.

Use Value: 0.05 Ω RDS(on) limits voltage drop to <150 mV at full load, meeting USB PD v2.0 voltage regulation spec.

Use Scenario: 24 V DC solid-state relay replacement in DIN-rail mounted I/O modules.

IC Role / Device Role / Timing Role: Low-side N-channel switch and high-side P-channel switch for isolated load control.

Use Value: ±20 V VGS rating withstands 24 V transients; 140 mJ EAS prevents failure during coil de-energization.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary dual-MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Si7225DN-T1-GE3RDS(on) = 0.022 Ω (N), 0.035 Ω (P); lower Qg but no avalanche rating publishedSuitable for high-frequency SMPS where EAS not required; not recommended for inductive loadsSelect when switching frequency >500 kHz and thermal margin exceeds 25 °C
DMC2038LSD-13RDS(on) = 0.035 Ω (N), 0.065 Ω (P); higher thermal resistance (RθJA = 75 °C/W)Better suited for space-constrained layouts due to smaller 3×3 mm TDFN packageSelect when PCB area is critical and peak ID ≤ 2.5 A per channel

Compared with Si7225DN and DMC2038LSD, IRF7314PBF offers superior avalanche ruggedness and SO-8 thermal performance, making it preferred for industrial motor drives and 12 V automotive subsystems where reliability under transient stress is mandatory.

Availability

IRF7314PBF is available at Aetrix Electronics and suitable for DC-DC converters, motor controllers, USB-C power delivery systems, and industrial digital output modules requiring stable component supply and long-term manufacturability.

Supply support for IRF7314PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF7314PBF belongs to Infineon's HEXFET® logic-level dual MOSFET product line, designed specifically for space- and efficiency-sensitive half-bridge and synchronous rectifier applications in consumer and industrial power systems.

FAQ

What is the maximum safe operating junction temperature for IRF7314PBF?

The absolute maximum junction temperature is 150 °C per the datasheet. Continuous operation above 125 °C requires derating of ID by 3.3 mA/°C beyond 25 °C ambient, and thermal design must maintain TJ ≤ 135 °C under worst-case pulse conditions to ensure 10-year reliability.

Can IRF7314PBF be used in a bootstrap high-side configuration?

No - the P-channel device is intended for true high-side switching with referenced gate drive; using it in bootstrap mode risks insufficient VGS swing due to body diode conduction. For bootstrap topologies, a dedicated N-channel high-side driver with floating supply is required.

Is the SO-8 package lead-free and RoHS-compliant?

Yes - the "PBF" suffix confirms lead-free termination and compliance with EU RoHS Directive 2011/65/EU. The device uses matte tin plating over copper leads, and the marking includes a YWW date code and Infineon logo per JEDEC standards.

How does the dual-source pin configuration affect PCB layout?

Pins 3 and 7 are internally connected to the same P-channel source node, and Pins 4 and 8 to the N-channel source node. This allows flexible routing: use Pin 3/4 for primary source connections and Pins 7/8 for thermal relief or ground plane stitching without electrical impact.

IRF7314PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Discontinued at Digi-Key
Technology:
MOSFET (Metal Oxide)
Configuration:
2 P-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
5.3A
Rds On (Max) @ Id, Vgs:
58mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id:
700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
29nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
780pF @ 15V
Power - Max:
2W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

IRF7314PBF FAQ

1.How can I place an order for IRF7314PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7314PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7314PBF reliable?

The price and inventory of IRF7314PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7314PBF is usually 5 days.

3.What payment methods are accepted for IRF7314PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7314PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7314PBF?

IRF7314PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7314PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7314PBF?

For technical support, including IRF7314PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7314PBF requirements.

6.How does Aetrix verify that IRF7314PBF is sourced from the original manufacturer or authorized distributors?

All IRF7314PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7314PBF meets industry standards.

7.What is the process for return or replacement of IRF7314PBF?

All IRF7314PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7314PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7314PBF part is unused and in its original packaging.

Return procedure for IRF7314PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRF7314PBF Tags

  • IRF7314PBF
  • IRF7314PBF PDF
  • IRF7314PBF Datasheet
  • IRF7314PBF Specifications
  • IRF7314PBF Images
  • Infineon Technologies
  • Infineon Technologies IRF7314PBF
  • Buy IRF7314PBF
  • IRF7314PBF Price
  • IRF7314PBF Distributor
  • IRF7314PBF Supplier
  • IRF7314PBF Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER