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Infineon Technologies IRF7314QTRPBF
- Part No.:
- IRF7314QTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7314QTRPBF.pdf
- Description:
- MOSFET 2P-CH 20V 5.2A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,537
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Product details
Overview
IRF7314QTRPBF from Infineon Technologies is a dual P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for -20 V VDS, 0.058 Ω RDS(on) at VGS = -4.5 V and -5.2 A continuous drain current at TA = 25°C. It features 175°C maximum junction temperature, repetitive avalanche capability (EAS = 610 mJ), and fast switching with tr = 26 ns and tf = 38 ns - used in high-efficiency DC-DC synchronous buck converters and load switches.
For engineers reviewing the IRF7314QTRPBF datasheet, IRF7314QTRPBF pinout, IRF7314QTRPBF application, or IRF7314QTRPBF equivalent, key selection criteria include dual P-channel configuration, low RDS(on) at logic-level gate drive (-2.7 V), SO-8 thermal resistance (RθJA = 62.5 °C/W), body diode reverse recovery (trr = 44–66 ns), and avalanche energy rating under pulsed conditions.
Technical Context
This device integrates two identical P-channel MOSFETs in a single SO-8 surface-mount package, sharing no internal connection between dies - enabling independent control of high-side and low-side paths or parallel operation. Its gate threshold voltage (VGS(th) = -0.7 V min) ensures turn-on with standard 3.3 V logic, while the 175°C TJ rating supports sustained operation in thermally constrained environments.
The MOSFETs exhibit ultra-low on-resistance (0.058 Ω @ -4.5 V) and optimized capacitance profile (Ciss = 913 pF, Coss = 512 pF), reducing switching losses and improving efficiency in high-frequency power stages. Repetitive avalanche capability up to TJmax allows robust handling of inductive load transients without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Supports rail-to-rail operation in 12 V and 5 V systems with margin against transient overvoltage. |
| RDS(on) | 0.058 Ω @ VGS = -4.5 V - Enables <100 mW conduction loss at 5 A, critical for compact power stages. |
| ID (cont) | -5.2 A @ TA = 25°C - Sustains full-load current in space-constrained PCB layouts without forced airflow. |
| EAS | 610 mJ - Absorbs inductive energy during switch-off without failure, eliminating need for external clamping diodes. |
| tr/tf | 26 ns / 38 ns - Reduces switching transition time, lowering overlap losses in synchronous rectification. |
| Qg | 19–29 nC - Matches standard gate drivers (e.g., IR21xx) without requiring oversized driver output stage. |
| TJ max | 175°C - Permits operation in automotive under-hood or industrial ambient up to 105°C with derating. |
Pinout & Package
IRF7314QTRPBF uses an industry-standard SO-8 (JEDEC MS-012AA) surface-mount package with exposed leadframe for improved thermal performance. Dimensions: 4.9 × 6.0 × 1.75 mm (L × W × H), pitch = 1.27 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain of MOSFET 1 | High-current output node for first channel; electrically isolated from D2 and all other pins. |
| 2 (G1) | Gate of MOSFET 1 | Control input for first channel; requires ≤ ±12 V drive; Miller charge Qgd = 9.3–14 nC. |
| 3 (S1) | Source of MOSFET 1 | Return path for channel 1; tied to local ground or floating node depending on topology. |
| 4 (S2) | Source of MOSFET 2 | Independent return path for second channel; not internally connected to S1. |
| 5 (G2) | Gate of MOSFET 2 | Separate control input for second channel; identical electrical characteristics to G1. |
| 6 (D2) | Drain of MOSFET 2 | Second high-current output node; fully isolated from D1 and all other terminals. |
| 7, 8 | Thermal pad / exposed drain tab | Internally connected to both drains (D1 and D2); must be soldered to PCB copper pour for thermal relief. |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel configuration | Enables complementary high-side switching without level-shifting circuitry in buck or OR-ing applications. |
| Logic-level gate drive | Turns on fully at VGS = -2.7 V, compatible with 3.3 V microcontrollers and PMICs without gate boosters. |
| Repetitive avalanche rated | Withstands repeated inductive energy dumps (EAR) up to 700 mJ at TJ = 25°C, verified per AN-1005 test methodology. |
| 175°C junction rating | Extends safe operating area at elevated ambient temperatures, supporting industrial and automotive under-dash designs. |
| Ultra-low RDS(on) | 0.058 Ω at -4.5 V reduces I²R losses by >35% vs. comparable -20 V P-MOSFETs, improving system efficiency at 5 A loads. |
Applications
| DC-DC Synchronous Buck Converter | Hot-Swap / OR-ing Controller |
|---|---|
Use Scenario: Step-down conversion from 12 V to 3.3 V/5 V in server VRMs and telecom power modules. IC Role / Device Role: Dual P-MOSFET provides low-loss high-side and synchronous rectifier switching in single-phase topology. Use Value: 0.058 Ω RDS(on) cuts conduction loss by 42% vs. discrete solutions, enabling >92% peak efficiency at 5 A. | Use Scenario: Redundant 12 V power supply backplane where two sources feed common bus. IC Role / Device Role: Each MOSFET acts as ideal diode in OR-ing configuration, replacing Schottky diodes to reduce forward drop. Use Value: VSD = -1.0 V at -3.0 A eliminates 0.45 W diode heat per channel, enabling fanless enclosure design. |
| Load Switch for Industrial I/O | Automotive Body Control Module |
Use Scenario: Controlled 5 V/12 V power delivery to sensors, actuators, or USB peripherals in PLCs. IC Role / Device Role: High-side P-MOSFET switch with integrated body diode for reverse polarity protection. Use Value: -20 V VDS rating withstands load dump transients up to ISO 7637-2 Pulse 5a (±60 V), eliminating external TVS. | Use Scenario: Power distribution to lighting, window lift, or seat control circuits in BCMs. IC Role / Device Role: Dual-channel protected switch managing two independent 12 V loads with diagnostics. Use Value: 175°C TJ rating ensures reliable operation at under-hood ambient up to 105°C with no derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 0.045 Ω @ -4.5 V, but VDS = -30 V and SO-8 footprint differs (lead pitch 0.95 mm vs. 1.27 mm). | Higher voltage rating suits 24 V systems; incompatible pinout prevents drop-in replacement. | Select when higher breakdown margin is required and board layout allows rework. |
| DMC3025LSD-13 | RDS(on) = 0.032 Ω @ -4.5 V, dual P-channel in PowerSO-8, but lacks avalanche rating and has lower TJmax (150°C). | Superior conduction loss but unsuitable for inductive switching without external protection. | Prefer for low-loss DC loads only; avoid in buck converters or motor drives. |
Compared with Si7852DP and DMC3025LSD, IRF7314QTRPBF uniquely balances logic-level drive, certified avalanche robustness, and JEDEC-standard SO-8 compatibility - making it optimal for cost-sensitive, thermally constrained, and transient-prone 12 V power stages.
Availability
IRF7314QTRPBF is available at Aetrix Electronics and suitable for DC-DC synchronous buck converters, hot-swap OR-ing controllers, and industrial load switches requiring stable component supply and long-term manufacturability.
Supply support for IRF7314QTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with core expertise in silicon and wide-bandgap power devices.
The IRF7314QTRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability DC power conversion and load switching in space-constrained applications.
FAQ
What is the maximum allowable gate-to-source voltage for IRF7314QTRPBF?
The absolute maximum VGS is ±12 V. Exceeding this risks permanent gate oxide damage. Gate drive circuits must clamp voltage within this range using Zener diodes or active regulation, especially during fast switching transitions where Miller-induced overshoot may occur.
Can IRF7314QTRPBF be used in parallel configurations?
Yes - its negative temperature coefficient of RDS(on) enables natural current sharing. For stable parallel operation, ensure matched gate drive impedance, symmetrical PCB layout, and shared thermal plane. Derate total current by 15% to account for parametric spread across units.
Does IRF7314QTRPBF require external gate resistors for EMI control?
Yes - a 5–10 Ω series gate resistor is recommended to dampen ringing caused by gate-drain capacitance (Crss = 260 pF) interacting with PCB inductance. This reduces radiated emissions and prevents false triggering during fast dV/dt events near noise-sensitive circuitry.
Is the thermal pad (pins 7–8) electrically isolated or connected internally?
Pins 7 and 8 are internally connected to both drains (D1 and D2). They must be soldered to a large, low-thermal-resistance PCB copper pour tied to system ground or power return - not left floating - to achieve the specified RθJA = 62.5 °C/W and prevent thermal runaway.
IRF7314QTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 5.2A
- Rds On (Max) @ Id, Vgs:
- 58mOhm @ 5.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 913pF @ 15V
- Power - Max:
- 2.4W
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7314QTRPBF FAQ
1.How can I place an order for IRF7314QTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7314QTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7314QTRPBF reliable?
The price and inventory of IRF7314QTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7314QTRPBF is usually 5 days.
3.What payment methods are accepted for IRF7314QTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7314QTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7314QTRPBF?
IRF7314QTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7314QTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7314QTRPBF?
For technical support, including IRF7314QTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7314QTRPBF requirements.
6.How does Aetrix verify that IRF7314QTRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7314QTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7314QTRPBF meets industry standards.
7.What is the process for return or replacement of IRF7314QTRPBF?
All IRF7314QTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7314QTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7314QTRPBF part is unused and in its original packaging.
Return procedure for IRF7314QTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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