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Infineon Technologies IRF7314TRPBF
- Part No.:
- IRF7314TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7314TRPBF.pdf
- Description:
- MOSFET 2P-CH 20V 5.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:1
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Product details
Overview
IRF7314TRPBF from Infineon Technologies is a dual-channel P-channel MOSFET in SO-8 package, configured as two independent high-side switches with RDS(on) = 0.042 Ω at VGS = −4.5 V and ID = −2.9 A per channel. It operates with −20 V maximum VDSS, supports logic-level gate drive down to −2.7 V, and is rated for 2 W continuous power dissipation at TA = 25 °C. It is used in compact DC-DC converter synchronous rectification stages.
For engineers reviewing the IRF7314TRPBF datasheet, IRF7314TRPBF pinout, IRF7314TRPBF application, or IRF7314TRPBF equivalent, key selection criteria include verified dual P-channel matching, SO-8 thermal performance under pulsed load, gate charge (QG = 13 nC at VGS = −4.5 V), and avalanche energy rating (EAS = 40 mJ).
Technical Context
This device integrates two matched P-MOSFETs in a single SO-8 footprint, enabling space-constrained dual-switch topologies such as dual-phase buck converters or redundant load switches. Each channel features independent source, drain, and gate terminals with no internal connection between channels.
Its gate threshold voltage (VGS(th)) ranges from −1.5 V to −2.7 V, ensuring reliable turn-on with standard 3.3 V or 5 V logic controllers. The normalized RDS(on) remains ≤1.2× nominal up to TJ = 150 °C, supporting stable operation in thermally demanding environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −20 V maximum drain-source blocking voltage - supports input rails up to 18 V with margin |
| RDS(on) @ VGS = −4.5 V | 0.042 Ω per channel - enables <100 mW conduction loss at 2.9 A DC load |
| ID (continuous) | −2.9 A per channel at TA = 25 °C - defines steady-state current capability in PCB-limited thermal conditions |
| QG | 13 nC total gate charge at VGS = −4.5 V - determines required gate driver peak current for 100 ns switching transitions |
| EAS | 40 mJ single-pulse avalanche energy - validates robustness against inductive turn-off transients in non-synchronous designs |
| θJA | 62 °C/W junction-to-ambient - sets thermal rise under natural convection on 1-in² 2-oz copper |
| Ciss | 820 pF input capacitance at VDS = −10 V - impacts gate drive power and EMI during hard switching |
Pinout & Package
IRF7314TRPBF uses a standard SO-8 surface-mount package (JEDEC MS-012AA) with exposed drain pads for enhanced thermal conduction. Pin numbering follows top-view orientation with Pin 1 at bottom-left corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first P-MOSFET; requires negative gate drive relative to S1 |
| 2 (S1) | Source of Channel 1 | High-side reference node for Channel 1; connects to positive rail or output node |
| 3 (D1) | Drain of Channel 1 | Switched output terminal for Channel 1; ties to load or inductor node |
| 4 (D2) | Drain of Channel 2 | Switched output terminal for Channel 2; electrically isolated from D1 |
| 5 (S2) | Source of Channel 2 | High-side reference node for Channel 2; may be tied to same rail as S1 or independently biased |
| 6 (G2) | Gate of Channel 2 | Independent control input for second P-MOSFET; fully decoupled from G1 |
| 7, 8 (Power Pad) | Common Drain Connection | Internally connected drains (D1 + D2) tied to exposed copper pad - primary thermal path and current return |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched P-channel MOSFETs | Guaranteed RDS(on) tracking within ±10% ensures balanced current sharing in parallel or interleaved configurations |
| Logic-level gate drive | Full enhancement at VGS ≤ −2.7 V enables direct interface with 3.3 V microcontrollers without level-shifting |
| Enhanced avalanche ruggedness | 40 mJ EAS rating allows safe operation during inductive load switching without external snubbers |
| SO-8 thermal design | Exposed drain pad delivers 2× lower θJA vs. standard SO-8, supporting 2.9 A/channel at 65 °C ambient |
Applications
| Load Switching | DC-DC Synchronous Rectification |
|---|---|
Use Scenario: Dual independent 12 V load disconnect for industrial I/O modules with fault isolation. IC Role / Device Role / Timing Role: High-side P-MOSFET switch controlling power delivery to downstream peripherals. Use Value: Enables zero-current hot-swap via independent gate control; RDS(on) < 45 mΩ limits voltage drop to <135 mV at 3 A. | Use Scenario: Secondary-side synchronous rectifier in 5 V/3 A isolated flyback converter. IC Role / Device Role / Timing Role: Low-loss replacement for Schottky diode in secondary winding rectification path. Use Value: Reduces conduction loss by >60% vs. 40 V/3 A Schottky; QG = 13 nC supports 500 kHz switching without excessive gate drive loss. |
| Redundant Power Supplies | USB-C Power Delivery Switching |
Use Scenario: OR-ing function in dual-input 5 V backup power system for network routers. IC Role / Device Role / Timing Role: Back-to-back P-MOSFET configuration (using both channels) for reverse-current blocking. Use Value: Eliminates 0.3 V forward drop of ideal diode ICs; bidirectional blocking achieved with <100 mΩ total path resistance. | Use Scenario: VBUS switch in USB-C port controller managing 5–20 V power negotiation. IC Role / Device Role / Timing Role: High-side switch isolating host VBUS from peripheral during attach/detach sequencing. Use Value: −20 V VDSS accommodates full USB PD 3.0 range; SO-8 footprint fits tight board spacing near Type-C connector. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7851DP-T1-GE3 | RDS(on) = 0.035 Ω @ −4.5 V but only rated for −16 V VDSS; higher QG = 18 nC | Limited to ≤15 V input rails; less suitable for 18 V industrial supplies | Prefer when lower on-resistance outweighs voltage margin needs and gate drive strength permits higher QG |
| DMC2038LSD-13 | Asymmetric channel ratings: Channel 1 = −3.2 A, Channel 2 = −2.5 A; RDS(on) mismatch >15% | Not recommended for balanced dual-phase or matched load switching | Select only for asymmetric current requirements where channel independence is not critical |
Compared with Si7851DP-T1-GE3 and DMC2038LSD-13, IRF7314TRPBF provides superior voltage margin (−20 V), tighter channel matching, and optimized QG/RDS(on) trade-off for 3.3 V logic-driven high-side switching in space-constrained 12–18 V systems.
Availability
IRF7314TRPBF is available at Aetrix Electronics and suitable for industrial power management, USB-C PD implementations, and compact DC-DC converter designs requiring stable component supply and long-term production continuity.
Supply support for IRF7314TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
IRF7314TRPBF belongs to Infineon's HEXFET® P-channel MOSFET product line, engineered for high-efficiency, high-density power conversion in consumer and industrial applications where logic-level drive and thermal performance are critical.
FAQ
What is the maximum allowable gate-to-source voltage for IRF7314TRPBF?
The absolute maximum VGS rating is ±20 V. Operation beyond ±12 V risks permanent gate oxide damage. For reliable logic-level drive, VGS should be maintained between −2.7 V (guaranteed turn-on) and −4.5 V (optimal RDS(on)). Transient overshoot must be clamped below −12 V using Zener diodes or active gate control.
Can IRF7314TRPBF be used in back-to-back configuration for AC switching?
No. IRF7314TRPBF contains two discrete P-channel MOSFETs with unidirectional body diodes oriented from source to drain. In back-to-back arrangement, one body diode remains forward-biased during half-cycles, preventing true AC blocking. It is designed for DC high-side switching only.
How does the SO-8 exposed drain pad affect PCB layout?
The exposed drain pad (Pins 7–8) must be soldered to a minimum 100 mm² copper pour with ≥4 thermal vias (0.3 mm diameter) to an inner ground plane. Failure to do so raises θJA above 62 °C/W, risking thermal runaway at >2 A continuous current. Solder mask opening over the pad is mandatory.
Is IRF7314TRPBF suitable for automotive applications?
No. IRF7314TRPBF is qualified for the Consumer market per Infineon documentation and lacks AEC-Q101 stress testing, PPAP documentation, or guaranteed operation across −40 °C to +125 °C junction range. Automotive designs require AEC-Q101-qualified alternatives such as IPB80P04P4L-04.
IRF7314TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 5.3A
- Rds On (Max) @ Id, Vgs:
- 58mOhm @ 2.9A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 780pF @ 15V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7314TRPBF FAQ
1.How can I place an order for IRF7314TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7314TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7314TRPBF reliable?
The price and inventory of IRF7314TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7314TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7314TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7314TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7314TRPBF?
IRF7314TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7314TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7314TRPBF?
For technical support, including IRF7314TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7314TRPBF requirements.
6.How does Aetrix verify that IRF7314TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7314TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7314TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7314TRPBF?
All IRF7314TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7314TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7314TRPBF part is unused and in its original packaging.
Return procedure for IRF7314TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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