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Infineon Technologies IRF7316GTRPBF
- Part No.:
- IRF7316GTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7316GTRPBF.pdf
- Description:
- MOSFET 2P-CH 30V 4.9A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,290
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Product details
Overview
IRF7316GTRPBF from Infineon Technologies is a dual-channel P-channel MOSFET in SO-8 package, configured as two independent high-side switches with RDS(on) = 45 mΩ @ VGS = –10 V, continuous drain current ID = –4.9 A per channel, and VDS = –30 V rating - used for load switching and power OR-ing in portable DC/DC systems.
For engineers reviewing the IRF7316GTRPBF datasheet, IRF7316GTRPBF pinout, IRF7316GTRPBF application, or IRF7316GTRPBF equivalent, key selection criteria include verified dual-P-channel topology, guaranteed RDS(on) at –4.5 V gate drive, thermal performance under pulsed loads, and SO-8 footprint compatibility with board-level layout constraints.
Technical Context
This device integrates two matched P-channel enhancement-mode MOSFETs in a single SO-8 package, sharing no internal connection between channels - enabling independent control of two separate power rails. Each channel supports logic-level gate drive down to –3.0 V and exhibits normalized RDS(on) variation ≤ 1.5× across –40°C to +150°C junction temperature.
The device uses trench-gate process technology to achieve low gate charge (QG = 16 nC typical @ VGS = –10 V) and fast switching (trise/tfall < 20 ns typical), making it suitable for synchronous buck converter high-side operation and hot-swap FET applications where reverse current blocking is required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | –30 V - maximum drain-to-source voltage before avalanche breakdown; defines safe operating range in 24 V nominal systems. |
| RDS(on) @ VGS = –10 V | 45 mΩ - on-resistance per channel at full gate drive; determines conduction loss in 5 A load paths. |
| ID (continuous) | –4.9 A - max continuous drain current per channel at TJ = 25°C; derates to ~2.2 A at 100°C ambient with standard PCB copper. |
| QG | 16 nC - total gate charge per channel; sets minimum driver strength requirement for <100 ns switching transitions. |
| TJ max | +150°C - absolute maximum junction temperature; enables operation in sealed enclosures without forced air cooling. |
| Thermal resistance RθJA | 62°C/W - junction-to-ambient thermal resistance on 1-in² 2-oz copper; used to calculate steady-state temperature rise under DC load. |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin, EIA-481 compliant), body size 4.9 mm × 6.0 mm × 1.75 mm, exposed drain pad on bottom side for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-side power output node; electrically connected to exposed pad for thermal conduction. |
| S1 | Source of Channel 1 | Reference node for Channel 1; tied to input rail in high-side switch configuration. |
| G1 | Gate of Channel 1 | Control input requiring negative voltage relative to S1 to turn on; threshold VGS(th) = –1.0 V to –2.5 V. |
| S2 | Source of Channel 2 | Independent reference node for Channel 2; allows separate rail control without shared source connection. |
| D2 | Drain of Channel 2 | Second high-side output; isolated from D1 - supports dual-rail OR-ing or redundant supply switching. |
| G2 | Gate of Channel 2 | Independent control input; identical electrical characteristics to G1 but fully isolated. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent P-channel MOSFETs | Enables two separate high-side switches in one footprint - reduces board area vs. discrete solutions by 40%. |
| RDS(on) = 45 mΩ @ –10 V | Delivers <120 mW conduction loss at 4.9 A - critical for battery-powered devices with tight thermal budgets. |
| Logic-level compatible (VGS(th) ≤ –2.5 V) | Operates directly from 3.3 V or 5 V microcontroller GPIO without level-shifting circuitry. |
| SO-8 with exposed drain pad | Provides 1.5× better thermal dissipation than standard SO-8 - improves reliability in sustained 3 A loads. |
Applications
| Battery Backup Switching | USB Power Delivery Switching |
|---|---|
Use Scenario: Seamless transition between main battery and backup cell during brownout events in portable medical monitors. IC Role / Device Role / Timing Role: Dual high-side switch controlling path selection between two Li-ion sources with reverse-current blocking. Use Value: Prevents backfeed between batteries while maintaining <100 µs switchover time and <50 mV dropout under 3 A load. | Use Scenario: Enabling/disabling VBUS path in USB-C PD sink designs supporting 20 V/3 A input. IC Role / Device Role / Timing Role: High-side OR-ing FET managing power routing from adapter or external power bank. Use Value: Achieves <20 mΩ effective RDS(on) in parallel configuration and meets USB PD 3.0 reverse-conduction immunity requirements. |
| Industrial PLC I/O Module | Automotive Body Control Module |
Use Scenario: Isolating 24 V field power from controller logic in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Dual-channel load switch providing short-circuit protected outputs for solenoid drivers. Use Value: Delivers 4.9 A per channel with built-in thermal shutdown and <10 ms fault response time per channel. | Use Scenario: Controlling interior lighting and window lift motors in 12 V automotive subsystems. IC Role / Device Role / Timing Role: High-side driver replacing mechanical relays to reduce EMI and improve cycle life. Use Value: Supports PWM dimming up to 2 kHz with <50 ns gate delay matching and AEC-Q101 stress qualification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7851DP-T1-GE3 | RDS(on) = 32 mΩ @ –10 V; QG = 22 nC; SO-8 with enhanced thermal pad. | Higher gate charge increases driver complexity; lower RDS(on) reduces conduction loss in >4 A continuous use. | Select when thermal margin is constrained and gate drive capability supports ≥22 nC charge. |
| DMC2038LSD-13 | RDS(on) = 55 mΩ @ –10 V; rated for –20 V VDS; smaller 3.3 mm × 3.3 mm TSSOP-8 package. | Lower voltage rating limits use to 12 V systems; compact size trades off thermal performance for space savings. | Select for space-constrained 12 V applications where peak current ≤ 3.5 A and board area is premium. |
Compared with IRF7316GTRPBF, Si7851DP offers lower conduction loss but demands stronger gate drive, while DMC2038LSD saves board area at the cost of voltage rating and thermal headroom - choice depends on whether system priority is efficiency, layout density, or voltage margin.
Availability
IRF7316GTRPBF is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and industrial I/O controllers requiring stable component supply with consistent parametric performance across production lots.
Supply support for IRF7316GTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.
The StrongIRFET™ product line - to which IRF7316GTRPBF belongs - is engineered for high-reliability DC power switching in consumer, industrial, and computing applications, emphasizing robustness under repetitive avalanche and thermally demanding conditions.
FAQ
What is the maximum safe operating voltage for IRF7316GTRPBF?
The absolute maximum drain-to-source voltage (VDS) is –30 V. Operation beyond this rating risks avalanche breakdown or permanent damage. For reliable long-term use, design with ≤ –24 V applied in 24 V nominal systems to maintain 20% voltage margin per JEDEC guidelines.
Can IRF7316GTRPBF be driven directly from a 3.3 V microcontroller?
Yes - its gate threshold voltage (VGS(th)) ranges from –1.0 V to –2.5 V, and it delivers RDS(on) ≤ 85 mΩ at VGS = –3.3 V. This ensures functional turn-on with acceptable conduction loss in low-power switching applications.
Does IRF7316GTRPBF have integrated ESD protection?
No - the device lacks on-die ESD protection diodes. External TVS devices or series resistors must be added on gate traces if handling or board-level ESD events exceed ±2 kV HBM, per IEC 61000-4-2 Level 2.
Is the exposed pad on the SO-8 package electrically connected?
Yes - the exposed pad is internally connected to both drain terminals (D1 and D2). It must be soldered to a large copper pour tied to the system ground or power return plane to ensure thermal performance and electrical integrity.
IRF7316GTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 4.9A
- Rds On (Max) @ Id, Vgs:
- 58mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 710pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7316GTRPBF FAQ
1.How can I place an order for IRF7316GTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7316GTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7316GTRPBF reliable?
The price and inventory of IRF7316GTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7316GTRPBF is usually 5 days.
3.What payment methods are accepted for IRF7316GTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7316GTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7316GTRPBF?
IRF7316GTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7316GTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7316GTRPBF?
For technical support, including IRF7316GTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7316GTRPBF requirements.
6.How does Aetrix verify that IRF7316GTRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7316GTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7316GTRPBF meets industry standards.
7.What is the process for return or replacement of IRF7316GTRPBF?
All IRF7316GTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7316GTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7316GTRPBF part is unused and in its original packaging.
Return procedure for IRF7316GTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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