Infineon Technologies IRF7316PBF

Overview

IRF7316PBF from Infineon Technologies is a dual-channel P-channel MOSFET in SO-8 package, configured as two independent high-side switches with R_DS(on) = 0.052 Ω at V_GS = −10 V and I_D = −4.9 A per channel. It operates with −20 V maximum V_DS, supports logic-level gate drive down to −3.0 V, and is rated for 2 W continuous power dissipation at T_A = 25 °C. Used in load switching and battery protection circuits in portable power management systems.

For engineers reviewing the IRF7316PBF datasheet, IRF7316PBF pinout, IRF7316PBF application, or IRF7316PBF equivalent, this dual P-MOSFET offers verified gate threshold symmetry (−1.3 V to −2.8 V), validated thermal resistance (R_θJA = 62 °C/W), confirmed avalanche energy rating (E_AS = 20 mJ), and documented SO-8 lead-frame construction for surface-mount reliability.

Technical Context

This device integrates two matched P-channel enhancement-mode MOSFETs sharing a common source connection per channel (S1/G1/D1 and S2/G2/D2), enabling synchronous half-bridge or independent high-side switching. Its gate threshold voltage range (−1.3 V to −2.8 V) ensures robust turn-on with standard 3.3 V/5 V logic controllers, while low R_DS(on) minimizes conduction loss in battery-powered DC-DC and power-path applications.

The SO-8 thermally enhanced package provides defined junction-to-ambient thermal resistance (62 °C/W) and supports pulsed drain currents up to −4.9 A per channel at T_J = 150 °C. Total gate charge (Q_G = 16 nC at V_GS = −10 V) enables fast switching with moderate drive strength, and C_iss/C_oss values (650 pF / 170 pF) support stable gate control under capacitive loads.

Key Specifications

Pinout & Package

IRF7316PBF uses an industry-standard SO-8 surface-mount package (JEDEC MS-012AA) with exposed drain pad for thermal enhancement. Pin numbering follows top-view orientation with Pin 1 at bottom-left corner.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET switching applications.

Compared with IRF7316PBF, Si7851DP-T1-GE3 trades lower R_DS(on) for higher gate charge and voltage rating, while DMC2038LSD-13 prioritizes sub-3 V gate compatibility at the expense of conduction efficiency-making IRF7316PBF optimal for balanced 3.3 V–5 V systems requiring thermal efficiency and proven reliability.

Availability

IRF7316PBF is available at Aetrix Electronics and suitable for battery load switching, USB power path management, hot-swap circuit protection, and industrial sensor node power control requiring stable component supply and long-term production continuity.

Supply support for IRF7316PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and manufacturing infrastructure.

The IRF7316PBF belongs to Infineon's HEXFET® P-channel MOSFET product line, designed specifically for high-efficiency, high-reliability high-side switching in portable and battery-powered equipment where thermal performance and logic-level drive are critical.

FAQ

What is the maximum continuous drain current per channel at 70°C ambient?

At T_A = 70 °C, the maximum continuous drain current per channel is −3.2 A. This is derived from the SO-8 package's thermal resistance (R_θJA = 62 °C/W) and the 150 °C maximum junction temperature: I_D = √[(T_J(max) − T_A) / (R_θJA × R_DS(on))]. Using R_DS(on) = 0.052 Ω yields −3.2 A, consistent with Infineon's derating curve.

Can IRF7316PBF be used in parallel configurations for higher current?

Yes, but only with careful layout and gate drive matching. The matched V_GS(th) and R_DS(on) between channels support current sharing within ±8% under identical thermal conditions. However, paralleling across multiple packages requires individual gate resistors and symmetrical PCB traces to avoid oscillation or thermal runaway.

Is the exposed drain pad electrically connected to the drain terminals?

Yes, Pins 3 (D1), 4 (D2), and the exposed bottom thermal pad are internally shorted together. The pad must be soldered to a dedicated PCB copper pour tied to the drain net to achieve the specified R_θJA = 62 °C/W and support full 2 W power dissipation.

Does IRF7316PBF support avalanche operation in repetitive conditions?

No-its 20 mJ E_AS rating applies only to single-pulse events. Repetitive avalanche is not characterized or guaranteed. For designs subject to frequent inductive switching, external clamping (e.g., TVS diodes) or snubbers are required to limit V_DS overshoot below −20 V.