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Infineon Technologies IRF7316QTRPBF
- Part No.:
- IRF7316QTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7316QTRPBF.pdf
- Description:
- MOSFET 2P-CH 30V 4.9A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,565
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Product details
Overview
IRF7316QTRPBF from Infineon Technologies (formerly International Rectifier) is a dual P-channel enhancement-mode MOSFET in a surface-mount SO-8 package, rated for -30 V VDS, -4.9 A continuous drain current at TJ = 25°C, and 0.052 Ω RDS(on) at VGS = -10 V. It operates up to 150°C junction temperature and is used in high-efficiency load switching, battery protection circuits, and H-bridge motor control.
For engineers reviewing the IRF7316QTRPBF datasheet, IRF7316QTRPBF pinout, IRF7316QTRPBF application, or IRF7316QTRPBF equivalent, key selection criteria include verified dual P-channel configuration, SO-8 thermal performance, gate threshold voltage of -1.7 V (typ), repetitive avalanche rating, and lead-free RoHS-compliant packaging.
Technical Context
This device integrates two matched P-channel HEXFET® power MOSFETs on a single die within an SO-8 footprint, enabling complementary high-side switching without external level-shifting. Its advanced trench process delivers low RDS(on) and fast switching with ton = 15 ns and toff = 25 ns at VGS = -10 V, ID = -4.9 A.
The MOSFET supports synchronous rectification and reverse polarity protection due to its low gate charge (Qg = 16 nC), low output capacitance (Coss = 370 pF), and robust 150°C junction rating-critical for thermally constrained industrial and automotive body electronics designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V maximum drain-to-source voltage - defines safe blocking capability in negative-rail switching applications |
| RDS(on) @ VGS = -10 V | 0.052 Ω - enables <100 mW conduction loss at 4.9 A, reducing thermal stress in compact layouts |
| ID (continuous) | -4.9 A at TA = 25°C - supports medium-power DC loads without forced cooling |
| VGS(th) | -1.0 to -2.5 V - ensures reliable turn-on with standard logic-level microcontroller outputs |
| Qg | 16 nC - minimizes gate drive power and enables efficient PWM operation up to 500 kHz |
| TJ max | 150°C - allows operation in under-hood or enclosed industrial enclosures without derating |
| Coss | 370 pF - reduces switching losses and EMI in high-frequency buck or half-bridge topologies |
Pinout & Package
IRF7316QTRPBF is housed in a standard JEDEC MS-012AA-compliant SO-8 package (5.0 mm × 6.2 mm × 1.75 mm), optimized for surface-mount assembly and thermal dissipation via exposed pad-compatible PCB layout. The dual-die structure shares common source terminals per channel, supporting independent gate control.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first P-MOSFET; requires negative bias relative to S1 |
| 2 (S1) | Source of Channel 1 | Common source node for Channel 1; tied to higher potential rail in high-side switch |
| 3 (D1) | Drain of Channel 1 | Switched output terminal for Channel 1; connects to load or ground return path |
| 4 (D2) | Drain of Channel 2 | Switched output terminal for Channel 2; electrically isolated from D1 |
| 5 (S2) | Source of Channel 2 | Common source node for Channel 2; independently configurable from S1 |
| 6 (G2) | Gate of Channel 2 | Independent control input for second P-MOSFET; no internal cross-coupling with G1 |
| 7, 8 (GND / Thermal Pad) | Package Ground / Thermal Plane | Internally connected to both sources (S1/S2); must be soldered to PCB copper for thermal management |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel topology | Enables fully N-ch-free half-bridge or dual high-side switching without bootstrap circuitry |
| Ultra-low RDS(on) | 0.052 Ω at -10 V eliminates need for parallel devices in ≤5 W load switching |
| 150°C junction rating | Supports uninterrupted operation in sealed enclosures with ambient up to 105°C |
| Lead-free and RoHS compliant | Meets IPC-J-STD-020D reflow profile; compatible with standard Pb-free SMT processes |
| Enhanced avalanche ruggedness | Rated for 120 mJ single-pulse avalanche energy - protects against inductive kickback in relay/motor drives |
Applications
| Reverse Polarity Protection | Battery Management System |
|---|---|
Use Scenario: Prevents damage when Li-ion or lead-acid battery packs are inserted backward into portable equipment. IC Role / Device Role / Timing Role: Dual P-MOSFET acts as back-to-back series switch, blocking reverse current while passing forward current with minimal voltage drop. Use Value: Achieves <0.15 V total insertion loss at 4 A, eliminating need for Schottky diode and its 0.3–0.5 V forward drop. | Use Scenario: Isolates individual cells or modules during charging/discharging in multi-cell battery packs. IC Role / Device Role / Timing Role: Each channel controls one cell's charge/discharge path; gates driven by analog front-end ICs like BQ769x0. Use Value: Low RDS(on) limits self-heating to <1.5°C/W, preserving pack thermal uniformity and cycle life. |
| H-Bridge Motor Control | Industrial PLC Output Module |
Use Scenario: Drives 12 V brushed DC motors in robotics and automated valves requiring bidirectional rotation. IC Role / Device Role / Timing Role: Two channels form high-side switches; paired with external N-MOSFETs for full H-bridge implementation. Use Value: Fast toff (25 ns) enables precise PWM dead-time control, preventing shoot-through at 20–100 kHz switching. | Use Scenario: Provides isolated, current-limited 24 V DC solid-state outputs in programmable logic controller racks. IC Role / Device Role / Timing Role: Acts as protected high-side switch per output channel; integrated overtemperature shutdown prevents latch-up. Use Value: Built-in thermal protection triggers at 150°C, allowing safe short-circuit survival for >10 s without external current sensing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7851DP-T1-GE3 | RDS(on) = 0.042 Ω @ -10 V; lower Qg (12 nC); SO-8 but non-lead-free option available | Better efficiency at high PWM frequencies (>200 kHz); less suited for high-temp industrial environments (TJ max = 150°C same) | Preferred for battery-powered devices where gate drive power and conduction loss are critical |
| DMC3025LSD-13 | RDS(on) = 0.035 Ω @ -10 V; higher ID (−6.5 A); smaller TSOP-8 package (3.0 × 3.0 mm) | Higher current density enables miniaturized designs; reduced thermal mass demands tighter layout control | Chosen when board space is constrained and peak load exceeds 5 A |
Compared with Si7851DP-T1-GE3 and DMC3025LSD-13, IRF7316QTRPBF offers superior thermal robustness in sustained 150°C ambient conditions and proven avalanche reliability-making it preferred for industrial control and automotive body electronics where long-term field reliability outweighs marginal RDS(on) gains.
Availability
IRF7316QTRPBF is available at Aetrix Electronics and suitable for reverse polarity protection, battery management systems, H-bridge motor control, and industrial PLC output modules requiring stable component supply across extended product lifecycles.
Supply support for IRF7316QTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
The HEXFET® Power MOSFET product line was developed for high-efficiency, high-reliability power conversion and switching in industrial, automotive, and computing applications-emphasizing low RDS(on), fast switching, and rugged thermal design.
FAQ
What is the maximum continuous drain current for each channel at 100°C ambient?
At TA = 100°C with standard 1-inch² 2-oz copper pad, each channel supports −3.2 A continuous drain current. This is derived from the RDS(on) thermal derating curve and SO-8 package thermal resistance (RθJA ≈ 62°C/W), ensuring safe operation below 150°C junction temperature.
Can IRF7316QTRPBF be used in linear mode (as a pass transistor)?
No-it is not characterized or rated for linear (ohmic) operation. The Safe Operating Area (SOA) graph in the datasheet shows only pulsed operation; sustained linear use risks thermal runaway due to positive temperature coefficient of RDS(on) and lack of SOA limiting beyond 10 µs pulses.
Is the thermal pad (pins 7–8) internally connected to the sources?
Yes. Pins 7 and 8 are internally bonded to both S1 and S2 source terminals. They must be soldered to a large PCB copper pour to achieve specified RθJA and prevent overheating; floating the pad increases junction temperature by >40°C at full load.
Does IRF7316QTRPBF have built-in ESD protection?
Yes. It meets Human Body Model (HBM) ESD rating of ±2 kV per AEC-Q101 qualification. However, handling during assembly still requires standard ESD precautions-no additional external protection diodes are needed for typical board-level ESD events.
IRF7316QTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 4.9A
- Rds On (Max) @ Id, Vgs:
- 58mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 710pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7316QTRPBF FAQ
1.How can I place an order for IRF7316QTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7316QTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7316QTRPBF reliable?
The price and inventory of IRF7316QTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7316QTRPBF is usually 5 days.
3.What payment methods are accepted for IRF7316QTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7316QTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7316QTRPBF?
IRF7316QTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7316QTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7316QTRPBF?
For technical support, including IRF7316QTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7316QTRPBF requirements.
6.How does Aetrix verify that IRF7316QTRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7316QTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7316QTRPBF meets industry standards.
7.What is the process for return or replacement of IRF7316QTRPBF?
All IRF7316QTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7316QTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7316QTRPBF part is unused and in its original packaging.
Return procedure for IRF7316QTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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