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UMW IRF7316TR
- Part No.:
- IRF7316TR
- Manufacturer:
- UMW
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7316TR.pdf
- Description:
- MOSFET 2P-CH 30V 4.9A 8SOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
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Product details
Overview
IRF7316TR from International Rectifier is a dual P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for -30 V VDS, 4.9 A continuous drain current at TA = 25°C, and 0.058 Ω RDS(on) at VGS = -10 V. It integrates two matched devices with fully avalanche-rated ruggedness and fast switching (tr = 13–20 ns), enabling compact high-efficiency synchronous rectification and load switching in DC-DC converters and battery protection circuits.
For engineers reviewing the IRF7316TR datasheet, IRF7316TR pinout, IRF7316TR application, or IRF7316TR equivalent, key selection criteria include dual P-channel configuration, SO-8 thermal performance (RθJA = 62.5°C/W), body diode recovery (trr = 44–66 ns), and gate charge (Qg = 23–34 nC) for low-loss PWM control in space-constrained power stages.
Technical Context
This dual P-MOSFET implements independent source-drain paths per channel with common-source topology support. Each channel features a co-packaged body diode (VSD = -0.78 to -1.0 V at IS = -1.7 A), specified reverse recovery (Qrr = 42–63 nC), and temperature-stable threshold (VGS(th) = -1.0 V typical).
The device uses fifth-generation HEXFET processing for ultra-low on-resistance density and supports repetitive avalanche operation (EAR = 0.20 mJ) under controlled dV/dt (-5.0 V/ns max). Its SO-8 leadframe is modified for enhanced thermal conduction and multi-die integration without inter-channel coupling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for negative-rail high-side switching in buck regulators and OR-ing circuits |
| RDS(on) | 0.058 Ω @ VGS = -10 V - Enables <120 mW conduction loss at 4.9 A, critical for thermally constrained PCB layouts |
| ID (cont) | 4.9 A @ TA = 25°C - Sustained current capability for dual-channel 5 V/3.3 V point-of-load supplies |
| Qg | 23–34 nC - Gate drive energy requirement dictating minimum gate driver output current for <100 ns switching transitions |
| tr/tf | 13–20 ns / 32–48 ns - Fast edge rates enabling >500 kHz PWM operation with reduced switching losses |
| EAS | 140 mJ - Single-pulse avalanche energy tolerance supporting inductive load turn-off without snubbers |
| RθJA | 62.5°C/W - Thermal resistance defining junction-to-ambient rise under FR-4 mounting, limiting max power to ~1.6 W at 70°C ambient |
Pinout & Package
IRF7316TR is housed in a surface-mount SO-8 package (JEDEC MS-012AA) with exposed leadframe optimized for thermal dissipation. The package supports vapor phase, infrared, and wave soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain of Channel 1 | High-current output node for first P-MOSFET; electrically isolated from D2 but shares thermal pad |
| 2 (G1) | Gate of Channel 1 | Control input requiring -10 V for full enhancement; Miller charge (Qgd = 5.9–8.9 nC) affects turn-off timing |
| 3 (S2) | Source of Channel 2 | Common source connection point for second channel; tied to system ground or floating rail depending on topology |
| 4 (D2) | Drain of Channel 2 | Independent high-side switch node; enables dual-output or complementary half-bridge configurations |
| 5 (G2) | Gate of Channel 2 | Second independent gate input; matched threshold ensures synchronized switching with Channel 1 |
| 6 (S1) | Source of Channel 1 | Common source for Channel 1; used for current sensing or feedback in synchronous rectifier designs |
| 7, 8 | Thermal Pad / Exposed Drain | Internally connected to both drains (D1/D2); primary heat path to PCB copper; must be soldered for rated RθJA |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel MOSFET | Two matched, isolated P-MOSFETs in one SO-8 footprint-reduces board area by >40% vs. discrete solutions in dual-rail systems |
| Fully avalanche rated | Rated for single-pulse EAS = 140 mJ and repetitive EAR = 0.20 mJ-enables robust operation during inductive load transients without external clamping |
| Ultra-low RDS(on) | 0.058 Ω at VGS = -10 V-minimizes I²R losses in high-current 3.3 V/5 V bus switches and battery disconnect circuits |
| Fast body diode recovery | trr = 44–66 ns, Qrr = 42–63 nC-reduces reverse recovery losses in synchronous rectification and bidirectional DC-DC topologies |
| SO-8 thermal enhancement | Custom leadframe with exposed drain pad-delivers 62.5°C/W RθJA on FR-4, enabling >1.5 W continuous dissipation without heatsink |
Applications
| DC-DC Synchronous Rectifier | Battery Protection Circuit |
|---|---|
|
Use Scenario: Secondary-side rectification in isolated 5 V/3.3 V flyback or forward converters powering portable electronics. IC Role / Device Role / Timing Role: Dual P-MOSFET replaces Schottky diodes to reduce conduction loss; each channel handles one transformer winding output. Use Value: Achieves >3% efficiency gain over diode rectification at 2 A load due to 0.058 Ω RDS(on) and fast tr/tf minimizing dead-time losses. |
Use Scenario: Overvoltage/overcurrent protection in 2-cell Li-ion battery packs with integrated fuel gauging. IC Role / Device Role / Timing Role: High-side P-MOSFET pair controls charge/discharge paths; body diodes enable reverse-current blocking during fault conditions. Use Value: Avalanche rating (EAS = 140 mJ) withstands inductive kick from protection IC shutdown, eliminating need for external TVS. |
| Hot-Swap Controller Interface | OR-ing Diode Replacement |
|
Use Scenario: Inrush current limiting and fault isolation in 12 V backplane modules compliant with IEEE 1621. IC Role / Device Role / Timing Role: Dual-channel P-MOSFET acts as controlled series switch; gates driven by hot-swap controller with slew-rate limiting. Use Value: Low Qg (23–34 nC) allows precise gate timing for <10 ms soft-start, preventing supply droop during insertion. |
Use Scenario: Redundant 5 V power supply combining in telecom shelf systems using ideal diode architecture. IC Role / Device Role / Timing Role: Each P-MOSFET serves as active OR-ing element; sources tied to common output, drains to separate inputs. Use Value: RDS(on) = 0.058 Ω reduces voltage drop to <300 mV at 5 A, improving load regulation vs. 400 mV Schottky diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7851DP-T1-GE3 | RDS(on) = 0.045 Ω @ VGS = -4.5 V; lower threshold enables 3.3 V logic drive, but EAS not specified | Better suited for low-voltage gate drive systems; lacks documented avalanche rating for inductive fault handling | Select when gate drive voltage ≤ 4.5 V and avalanche robustness is secondary to on-resistance |
| DMC3025LSD-13 | RDS(on) = 0.032 Ω @ VGS = -10 V; higher ID = 6.5 A, but RθJA = 70°C/W limits thermal headroom | Higher current capacity supports 6 A loads, but thermal derating requires larger copper area for same power | Select for higher current margin where PCB layout allows additional thermal relief |
Compared with Si7851DP-T1-GE3 and DMC3025LSD-13, IRF7316TR offers balanced trade-offs: verified avalanche ruggedness for fault-prone environments, SO-8 thermal performance optimized for standard FR-4, and gate characteristics compatible with legacy ±10 V drivers-making it preferred for industrial power modules requiring proven field reliability.
Availability
IRF7316TR is available at Aetrix Electronics and suitable for DC-DC synchronous rectifiers, battery protection circuits, hot-swap interfaces, and OR-ing diode replacements requiring stable component supply across automotive infotainment, industrial PLC I/O modules, and telecom power shelves.
Supply support for IRF7316TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
International Rectifier (now part of Infineon Technologies) was a pioneer in power semiconductor design, specializing in high-efficiency MOSFETs, IGBTs, and driver ICs for industrial, automotive, and computing applications.
The HEXFET® Power MOSFET product line was engineered for high-power-density switching in DC-DC conversion, motor control, and power management-emphasizing low RDS(on), fast switching, and rugged avalanche performance.
FAQ
What is the maximum continuous drain current for IRF7316TR at 70°C ambient?
The IRF7316TR supports -3.9 A continuous drain current per channel at TA = 70°C, derated from -4.9 A at 25°C due to thermal limitations. This value assumes SO-8 mounting on FR-4 with minimal copper area; adding 1 in² of 2-oz copper on the drain pad increases current capability by ~1.2 A at 70°C ambient.
Can IRF7316TR be used with 3.3 V gate drive?
No-IRF7316TR has a nominal VGS(th) of -1.0 V but requires ≥ -4.5 V for usable RDS(on) (0.076 Ω) and ≥ -10 V for specified 0.058 Ω performance. Driving with only 3.3 V results in RDS(on) > 0.2 Ω and excessive conduction loss; a level-shifting gate driver is required for 3.3 V logic control.
Is the thermal pad (pins 7–8) internally connected to the drains?
Yes-pins 7 and 8 are an exposed thermal pad internally bonded to both drain terminals (D1 and D2). This connection is mandatory for achieving the published RθJA = 62.5°C/W; leaving the pad unconnected raises junction temperature by >40°C at 2 W dissipation and risks thermal runaway.
Does IRF7316TR support paralleling of channels for higher current?
No-the two channels are electrically isolated but thermally coupled on a shared die substrate; paralleling them does not double current rating due to mismatched thermal resistance and potential current imbalance. For >4.9 A, use separate discrete MOSFETs with individual thermal paths and gate resistors.
IRF7316TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- UMW
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 4.9A (Ta)
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 710pF @ 25V
- Power - Max:
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOP
IRF7316TR FAQ
1.How can I place an order for IRF7316TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7316TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7316TR reliable?
The price and inventory of IRF7316TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7316TR is usually 5 days.
3.What payment methods are accepted for IRF7316TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7316TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7316TR?
IRF7316TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7316TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7316TR?
For technical support, including IRF7316TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7316TR requirements.
6.How does Aetrix verify that IRF7316TR is sourced from the original manufacturer or authorized distributors?
All IRF7316TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7316TR meets industry standards.
7.What is the process for return or replacement of IRF7316TR?
All IRF7316TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7316TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7316TR part is unused and in its original packaging.
Return procedure for IRF7316TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF7316TR Tags
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