Infineon Technologies IRF7316TRPBF

Overview

IRF7316TRPBF from Infineon Technologies is a dual P-channel MOSFET in SO-8 package, configured as two independent enhancement-mode switches with R_DS(on) = 0.055 Ω @ V_GS = −10 V and continuous drain current I_D = −4.9 A per channel. It operates at −60 V V_DSS, supports logic-level gate drive down to −4.5 V, and is used in high-efficiency load switching for portable power management and battery protection circuits.

For engineers reviewing the IRF7316TRPBF datasheet, IRF7316TRPBF pinout, IRF7316TRPBF application, or IRF7316TRPBF equivalent, key selection criteria include dual-channel P-MOS topology, low R_DS(on) at −4.5 V gate drive, SO-8 thermal performance (R_θJA = 62 °C/W), and avalanche energy rating E_AS = 150 mJ - critical for overvoltage robustness in DC-DC and hot-swap designs.

Technical Context

This dual P-channel MOSFET integrates two matched, isolated silicon die in a single SO-8 package with common-source configuration per channel. Each channel features a rated V_DSS of −60 V, threshold voltage V_GS(th) between −1 V and −3 V, and gate charge Q_g = 20 nC at V_GS = −10 V.

The device uses trench-gate process technology to achieve low on-resistance while maintaining fast switching (t_rise/t_fall ≈ 12 ns/15 ns typical at R_G = 10 Ω) and low output capacitance (C_oss = 320 pF). Its SO-8 footprint enables compact dual-switch layouts without discrete pairing.

Key Specifications

Pinout & Package

IRF7316TRPBF is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads for both channels connected internally to pins 1, 2, 3, 4 (D1) and pins 5, 6, 7, 8 (D2). The package supports hand-soldering and reflow, and its thermal pad design allows direct PCB copper pour attachment for improved heat dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Compared with Si7851DP-T1-GE3 and DMC3025LSD-13, IRF7316TRPBF offers the best balance of logic-level drivability, avalanche ruggedness, and SO-8 thermal reliability - making it optimal for cost-sensitive, space-constrained industrial and portable power systems where gate simplicity and transient robustness are prioritized.

Availability

IRF7316TRPBF is available at Aetrix Electronics and suitable for battery protection, DC-DC synchronous rectification, and industrial I/O load switching requiring stable component supply and long-term production continuity.

Supply support for IRF7316TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF7316TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, designed specifically for high-reliability, high-efficiency power switching in consumer, industrial, and computing applications where dual-channel integration and logic-level compatibility are essential.

FAQ

What is the maximum continuous drain current per channel at 70°C ambient?

At T_A = 70 °C with standard SO-8 PCB layout (1 in² 2 oz Cu), the maximum continuous drain current per channel is approximately −2.2 A. This is derived from thermal derating using R_θJA = 62 °C/W and T_J(max) = 150 °C, resulting in allowable power dissipation of ~1.3 W per channel.

Can IRF7316TRPBF be used in a high-side switch configuration?

Yes - each P-channel MOSFET channel can operate as a high-side switch with source tied to the positive rail and load connected between drain and ground. Gate must be driven negative relative to source; −4.5 V to −10 V is sufficient for full enhancement, enabling direct MCU GPIO control with appropriate level translation if needed.

Is the SO-8 package lead-free and RoHS compliant?

Yes - IRF7316TRPBF is marked "P" in its part marking (e.g., F7101P), indicating compliance with JEDEC J-STD-020 and RoHS Directive 2011/65/EU. The device uses matte tin plating and meets Pb-free soldering profile requirements up to 260 °C peak reflow temperature.

Does IRF7316TRPBF have integrated ESD protection?

No - IRF7316TRPBF does not include on-die ESD protection diodes. External TVS or RC snubbers are recommended on gate lines in environments with >2 kV HBM risk; gate oxide breakdown voltage is rated at ±20 V, so transient suppression is required for robust system-level ESD immunity.