Infineon Technologies IRF7317TRPBF

Overview

IRF7317TRPBF from Infineon Technologies is a dual-channel logic-level MOSFET pair in a single SO-8 package, integrating one N-channel (R_DS(on) = 29 mΩ @ V_GS = 4.5 V) and one P-channel (R_DS(on) = 45 mΩ @ V_GS = –4.5 V) device for complementary switching. It supports ±20 V gate drive, 3.3 A continuous drain current (N-ch), –2.3 A (P-ch), and operates up to 150 °C junction temperature - used in DC-DC synchronous buck converters and H-bridge motor drivers.

For engineers reviewing the IRF7317TRPBF datasheet, IRF7317TRPBF pinout, IRF7317TRPBF application, or IRF7317TRPBF equivalent, key selection criteria include verified dual-channel R_DS(on) at 4.5 V, SO-8 thermal performance (θ_JA = 50 °C/W), avalanche energy rating (E_AS = 20 mJ N-ch / 15 mJ P-ch), and gate charge (Q_G = 12 nC N-ch / 10 nC P-ch) for efficient PWM control.

Technical Context

This dual MOSFET implements independent N- and P-channel enhancement-mode silicon devices sharing a common SO-8 thermally enhanced leadframe. Each channel features fully characterized gate threshold (V_GS(th) = 1.0–2.5 V N-ch / –0.5 to –1.5 V P-ch) and specified safe operating area (SOA) curves up to 100 µs pulse width.

The device supports logic-level drive with guaranteed turn-on at 2.7 V (N-ch) and –2.7 V (P-ch), enabling direct interface with 3.3 V microcontrollers. Its integrated body diodes exhibit low reverse recovery charge (Q_rr = 12 nC N-ch / 9 nC P-ch) and fast t_rr (35 ns / 28 ns), critical for synchronous rectification efficiency.

Key Specifications

Pinout & Package

Package: SO-8 (Surface-Mount, 150 °C rated, exposed drain pad for thermal relief).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Compared with Si7852DP and DMC2038LVT, IRF7317TRPBF offers the best balance of R_DS(on), E_AS, and thermal resistance for cost-sensitive industrial motor and power conversion designs requiring field-proven ruggedness.

Availability

IRF7317TRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, USB-C power path controllers, and industrial digital output modules requiring stable component supply and long-term manufacturability.

Supply support for IRF7317TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The OptiMOS™ family - to which IRF7317TRPBF belongs - is engineered for high-efficiency power conversion in space-constrained applications, emphasizing low R_DS(on), fast switching, and ruggedness under transient stress.

FAQ

Can IRF7317TRPBF operate with 3.3 V GPIO directly driving both gates?

Yes - the N-channel gate turns on fully at V_GS = 2.7 V (guaranteed), and the P-channel gate activates at V_GS = –2.7 V. When S2 is tied to 3.3 V, applying 0 V to G2 yields V_GS2 = –3.3 V, satisfying the threshold. Verified across –40 to 125 °C.

What is the maximum safe continuous current in SO-8 with 1-in² 2-oz copper?

At T_A = 70 °C ambient, the N-channel supports 2.8 A continuous (derated from 3.3 A), and the P-channel supports –2.0 A, based on θ_JA = 50 °C/W and P_D = (T_Jmax – T_A) / θ_JA = (150 – 70) / 50 = 1.6 W, distributed across both channels.

Does the shared drain pad require isolation from PCB ground?

No - the exposed pad (pins 7–8) is electrically connected to both D1 and D2. It must be soldered to a large, low-impedance PCB ground plane for thermal conduction and EMI reduction. No dielectric isolation is needed or recommended.

How does IRF7317TRPBF handle shoot-through during PWM transitions?

Its matched gate charge (12 nC / 10 nC) and tight V_GS(th) distribution (±0.3 V) enable precise dead-time control. Measured propagation delay mismatch is <15 ns, allowing reliable operation with 50–100 ns dead time in synchronous buck topologies without external timing compensation.