Infineon Technologies IRF7319TRPBF

Overview

IRF7319TRPBF from Infineon Technologies is a dual-channel complementary MOSFET pair featuring an N-channel and P-channel enhancement-mode logic-level power MOSFET in a single SO-8 package. It supports ±20 V gate drive, delivers 5.8 A (N-ch) and –4.9 A (P-ch) continuous drain current at T_J = 25°C, and exhibits R_DS(on) of 0.022 Ω (N-ch) and 0.045 Ω (P-ch) at V_GS = 10 V - widely used in half-bridge motor control and synchronous buck converter topologies.

For engineers reviewing the IRF7319TRPBF datasheet, IRF7319TRPBF pinout, IRF7319TRPBF application, or IRF7319TRPBF equivalent, key selection criteria include verified complementary channel matching, logic-level gate thresholds (V_GS(th) = 1–2.5 V), low gate charge (Q_G = 12 nC / 10 nC), thermal resistance (R_θJA = 50°C/W), and SO-8 footprint compatibility with PCB layout constraints for high-side/low-side switching.

Technical Context

This dual MOSFET integrates matched N- and P-channel devices optimized for synchronous rectification and bidirectional load switching. Its gate threshold voltages (V_GS(th) = 1.0–2.5 V for N-ch; –1.0––2.5 V for P-ch) enable direct microcontroller GPIO driving without level-shifting. The device uses trench MOSFET technology to achieve low R_DS(on) and fast switching transitions (t_rise/t_fall < 20 ns typical at I_D = 5 A).

Thermal design is supported by a junction-to-ambient R_θJA of 50°C/W on standard FR-4 with 1-in² 2-oz copper, and it sustains single-pulse avalanche energy up to 125 mJ (N-ch) and 95 mJ (P-ch). The SO-8 package provides isolated source terminals for independent gate control and Kelvin sensing capability in high-precision current regulation.

Key Specifications

Pinout & Package

IRF7319TRPBF is housed in a surface-mount SO-8 (Small Outline-8) package with exposed drain pad for enhanced thermal dissipation. Pin 1 is G1 (N-channel gate), Pin 2 is S1 (N-channel source), Pin 3 is D1 (N-channel drain), Pin 4 is D2 (P-channel drain), Pin 5 is S2 (P-channel source), Pin 6 is G2 (P-channel gate), Pins 7 and 8 are internally connected to D1/D2 and serve as high-current drain terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary dual-MOSFET applications.

Compared with Si7225DN-T1-GE3 and DMC2038LSD-13, IRF7319TRPBF offers balanced trade-offs: mid-range R_DS(on) and gate charge support robust 5 A operation with moderate thermal design effort, while its verified V_GS(th) window ensures reliable logic-level drive across temperature and process variation.

Availability

IRF7319TRPBF is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, power OR-ing, and load switching applications requiring stable component supply and long-term industrial availability.

Supply support for IRF7319TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with over 30 years of MOSFET innovation.

The OptiMOS™ product line - to which IRF7319TRPBF belongs - is engineered for high-efficiency, logic-level switching in space-constrained power stages, targeting motor drives, server VRMs, and battery-powered equipment.

FAQ

What is the maximum safe operating junction temperature for IRF7319TRPBF?

The absolute maximum junction temperature is 150°C per the Infineon datasheet. Continuous operation above 125°C reduces lifetime significantly; derating curves show R_DS(on) increases by ~35% from 25°C to 150°C. Thermal design must maintain T_J ≤ 125°C under worst-case ambient and power dissipation conditions using the specified R_θJA = 50°C/W.

Can IRF7319TRPBF be used in a bootstrap high-side configuration?

No - the P-channel device is intended for high-side switching with grounded source, not bootstrap operation. Its source terminal (Pin 5) is isolated and must be connected to the positive rail; gate drive must be referenced to that source. Bootstrap configurations require N-channel high-side switches with floating gate drivers, which IRF7319TRPBF does not support.

Is the SO-8 package lead-free and RoHS compliant?

Yes - IRF7319TRPBF is manufactured with lead-free terminations and complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), allowing unlimited floor life at ≤30°C/85% RH. The "TRPBF" suffix explicitly denotes lead-free, halogen-free, and RoHS-compliant packaging.

How does the gate charge asymmetry affect PWM dead-time requirements?

With Q_G = 12 nC (N) and 10 nC (P), the P-channel turns on/off ~17% faster than the N-channel at identical gate drive strength. To prevent shoot-through, dead-time should be set ≥150 ns - verified by measurement on evaluation boards using 10 Ω gate resistors and 15 V drive. Shorter dead-times risk overlap during transitions at >500 kHz switching.