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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies IRF7324

Name: IRF7324
Brand: Infineon Technologies
SKU: IRF7324
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7324

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7324.pdf

Description:: MOSFET 2P-CH 20V 9A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:7,606

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Product details

Overview

IRF7324 from Infineon Technologies (formerly International Rectifier) is a dual P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for -20 V V_DS, 0.018 Ω R_DS(on) at -4.5 V V_GS, and -9.0 A continuous drain current at 25°C. It integrates two matched low-side load switches optimized for battery-powered portable electronics and power-path management.

For engineers reviewing the IRF7324 datasheet, IRF7324 pinout, IRF7324 application, or IRF7324 equivalent, key selection criteria include its dual P-channel configuration, ultra-low on-resistance at logic-level gate drive, thermal performance on FR-4 board, and body diode reverse recovery characteristics for synchronous rectification or back-to-back switching.

Technical Context

The IRF7324 implements trench-gate MOSFET technology to achieve high channel density and minimized conduction losses. Its dual die structure shares common source terminals (S1/S2) and independent gates (G1/G2), enabling independent control of two parallel or back-to-back switching paths with matched R_DS(on) and dynamic parameters.

Designed for low-voltage DC power distribution, it operates with gate thresholds between -0.45 V and -1.0 V, supports 2.5 V logic-compatible drive, and features integrated body diodes with 180–270 ns reverse recovery time and 300–450 nC Q_rr - critical for minimizing switching loss in bidirectional current paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for low-voltage battery systems (e.g., single-cell Li-ion or 3.3/5 V rails)
R_DS(on)	0.018 Ω @ V_GS = -4.5 V, I_D = -9.0 A - Enables <162 mW conduction loss at full rated current
I_D (cont)	-9.0 A @ T_A = 25°C - Sustained current capability for compact load switches without forced cooling
P_D	2.0 W @ T_A = 25°C - Power dissipation limit on standard FR-4 PCB, defining thermal design margin
Q_g	42–63 nC - Total gate charge determining drive strength requirement and switching speed trade-off
C_iss	2940 pF - Input capacitance affecting gate driver slew rate and EMI during turn-on
t_r/t_f	36 ns / 190 ns - Asymmetric rise/fall times indicating faster turn-on than turn-off under tested conditions

Pinout & Package

IRF7324 is housed in a surface-mount SO-8 package (JEDEC MS-012AA), 4.9 mm × 6.0 mm footprint, 1.1 mm max height, with gull-wing leads and exposed thermal pad (not electrically connected). Pin 1 is marked by dot or bevelled corner.

Pin/Terminal	Circuit Role	Design Meaning
G1	Gate of Channel 1	Independent control input for first P-MOSFET; requires negative V_GS relative to S1
S1	Source of Channel 1	Common source node for Channel 1; tied internally to S2 in dual-channel configuration
D1	Drain of Channel 1	High-side or low-side switching node for first channel; connects to load or supply rail
G2	Gate of Channel 2	Independent control input for second P-MOSFET; electrically isolated from G1
S2	Source of Channel 2	Common source node for Channel 2; bonded to S1 - forms shared source terminal
D2	Drain of Channel 2	Second independent switching node; enables dual-load or back-to-back switch topology
NC	No Connect	Pin 7 is unconnected; no internal bond wire or circuit connection
NC	No Connect	Pin 8 is unconnected; serves mechanical support only

Key Features

Feature	Design Value
Dual P-channel integration	Two matched MOSFETs in one SO-8 package reduce board area and component count vs. discrete solutions
Logic-level gate drive	Operates fully enhanced at -2.5 V V_GS, compatible with 2.5 V/3.3 V microcontroller GPIOs without level-shifting
Ultra-low R_DS(on)	0.018 Ω at -4.5 V ensures <1% voltage drop across switch at 5 A, preserving system efficiency
Low-profile package	Max height <1.1 mm enables use in space-constrained portable devices such as wearables and thin tablets
Trench process technology	Reduces specific on-resistance by >30% vs. planar P-MOSFETs, improving power density and thermal performance

Applications

Battery Protection Circuit

USB Power Delivery Switch

Use Scenario: Dual MOSFET used in overvoltage/overcurrent protection IC interface to disconnect battery from charging path during fault.

IC Role / Device Role: Back-to-back P-MOSFET pair acting as bidirectional blocking switch with integrated body diodes.

Use Value: Enables reverse-current blocking and fast fault isolation (<1 µs response with proper gate driver), meeting IEC 62368-1 safety requirements.

Use Scenario: Load switch controlling 5 V USB VBUS power to downstream peripherals in host mode.

IC Role / Device Role: Low-side P-MOSFET switch with controlled inrush limiting via gate resistor network.

Use Value: 0.018 Ω R_DS(on) limits voltage drop to <90 mV at 5 A, maintaining USB 2.0/3.0 voltage compliance under full load.

Power Bank Output Stage

Smartphone Power Path Management

Use Scenario: Dual-channel switch managing simultaneous output to USB-A and USB-C ports with independent enable control.

IC Role / Device Role: Two independently gated P-MOSFETs sharing common source, supporting multi-port power routing.

Use Value: Matched R_DS(on) ensures balanced current sharing and thermal distribution across outputs, extending battery runtime.

Use Scenario: Integrated power path controller uses IRF7324 to prioritize wall adapter input over battery during charging.

IC Role / Device Role: High-side P-MOSFET isolating battery from system rail when AC adapter is present.

Use Value: Low 2.5 V gate threshold allows direct control from PMIC's logic-level enable signal, eliminating external level shifters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7851DP	R_DS(on) = 0.022 Ω @ -4.5 V; higher Q_g (72 nC); SO-8 with thermal pad	Requires thermal pad soldering for full 2.5 W rating; less suitable for non-thermal-pad layouts	Select when board-level thermal management includes exposed pad reflow and higher peak current tolerance is needed.
DMC2038LSD	R_DS(on) = 0.025 Ω @ -4.5 V; lower ID rating (-6.5 A); smaller 2×2 mm DFN package	Lacks dual independent drains - single D-source configuration limits back-to-back use	Prefer for ultra-compact designs where only single-switch functionality is required and space is critical.

Compared with Si7851DP and DMC2038LSD, the IRF7324 offers the lowest R_DS(on) and true dual-drain independence in standard SO-8, making it optimal for applications requiring matched, separately controllable P-MOSFETs without thermal pad assembly complexity.

Availability

IRF7324 is available at Aetrix Electronics and suitable for battery protection circuits, USB power delivery switches, power bank output stages, and smartphone power path management requiring stable component supply and long-term industrial availability.

Supply support for IRF7324 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive electronics, and sensor solutions with emphasis on energy efficiency and reliability.

The IRF7324 belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, low-voltage DC power distribution in portable and battery-operated systems.

FAQ

What is the maximum junction temperature for continuous operation?

The IRF7324 has a specified junction temperature range of -55°C to +150°C. For reliable continuous operation, the device must be thermally designed to keep T_J ≤ 150°C under worst-case ambient and power dissipation conditions. Derating begins above 25°C ambient at 16 mW/°C, and thermal resistance R_θJA is 62.5°C/W on standard FR-4 board.

Can IRF7324 be used in back-to-back configuration for AC blocking?

Yes - the dual P-channel structure with independent drains (D1/D2) and common source (S1/S2) enables true back-to-back connection without external diodes. When both gates are driven low, the body diodes oppose each other, blocking bidirectional current flow - ideal for USB OTG or reversible power interfaces.

Is the SO-8 package lead-free and RoHS compliant?

Yes - the IRF7324 SO-8 package is lead-free and RoHS compliant per EU Directive 2011/65/EU. The device meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 and is qualified for reflow soldering up to 260°C peak temperature, with no pre-bake required.

Does IRF7324 require a gate resistor for stability?

A gate resistor (typically 10–100 Ω) is recommended to dampen ringing caused by gate loop inductance and Miller effect, especially at high dV/dt. Test data shows td(off) = 170 ns and tf = 190 ns with RG = 6.0 Ω - increasing RG slows turn-off but improves EMI and shoot-through immunity in half-bridge configurations.

IRF7324 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 P-Channel (Dual)

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 20V

Current - Continuous Drain (Id) @ 25°C:: 9A

Rds On (Max) @ Id, Vgs:: 18mOhm @ 9A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:: 2940pF @ 15V

Power - Max:: 2W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7324 FAQ

1.How can I place an order for IRF7324 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7324 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7324 reliable?

The price and inventory of IRF7324 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7324 is usually 5 days.

3.What payment methods are accepted for IRF7324?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7324 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7324?

IRF7324 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7324 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7324?

For technical support, including IRF7324 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7324 requirements.

6.How does Aetrix verify that IRF7324 is sourced from the original manufacturer or authorized distributors?

All IRF7324 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7324 meets industry standards.

7.What is the process for return or replacement of IRF7324?

All IRF7324 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7324, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7324 part is unused and in its original packaging.

Return procedure for IRF7324:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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