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Infineon Technologies IRF7324PBF
- Part No.:
- IRF7324PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7324PBF.pdf
- Description:
- MOSFET 2P-CH 20V 9A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,434
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Product details
Overview
IRF7324PBF from Infineon Technologies (formerly International Rectifier) is a dual P-channel enhancement-mode MOSFET in SO-8 package, rated for -20 V VDS, 0.018 Ω RDS(on) at -4.5 V VGS, and -9.0 A continuous drain current at 25°C. It integrates two matched low-side load switches ideal for battery-powered portable electronics power path control.
For engineers reviewing the IRF7324PBF datasheet, IRF7324PBF pinout, IRF7324PBF application, or IRF7324PBF equivalent, key selection criteria include its dual P-channel configuration, ultra-low on-resistance at 2.5 V gate drive, SO-8 thermal performance (62.5 °C/W RθJA), and integrated body diode reverse recovery characteristics (trr = 180–270 ns).
Technical Context
This device implements trench-gated HEXFET architecture optimized for high-efficiency DC load switching below 20 V. Its dual die layout enables symmetrical current sharing and matched threshold voltage (-0.45 to -1.0 V VGS(th)) across both channels, supporting synchronous operation in bidirectional power routing.
The SO-8 package supports surface-mount assembly with defined thermal pad exposure and 1.27 mm lead pitch. Gate charge parameters (Qg = 42–63 nC, Qgd = 12–18 nC) indicate moderate-speed switching capability suitable for PWM frequencies up to 500 kHz in battery management systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for low-voltage P-channel load switching |
| RDS(on) | 0.018 Ω @ VGS = -4.5 V, ID = -9.0 A - Enables <180 mW conduction loss at full rated current |
| ID (cont) | -9.0 A @ TA = 25°C - Sustained current handling for compact battery protection circuits |
| PD | 2.0 W @ TA = 25°C - Power dissipation limit under standard FR-4 board mounting |
| trr | 180–270 ns - Body diode reverse recovery time affecting shoot-through risk in H-bridge configurations |
| Qg | 42–63 nC - Total gate charge defining driver strength requirement for 100–500 kHz switching |
| VGS(th) | -0.45 to -1.0 V - Threshold range enabling reliable turn-on with 2.5 V logic-level gate drive |
Pinout & Package
IRF7324PBF uses an SO-8 surface-mount package per JEDEC MS-012AA, with exposed thermal pad (non-electrical) and 1.27 mm lead pitch. Pin 1 is top-left corner marker; pins are numbered counter-clockwise.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G1 | Gate of Channel 1 | Controls first P-MOSFET; requires negative VGS relative to S1 for turn-on |
| S1 | Source of Channel 1 | Common source node for Channel 1; connects to higher potential (e.g., battery +) |
| D1 | Drain of Channel 1 | Switched output node for Channel 1; connects to load or ground return path |
| G2 | Gate of Channel 2 | Independent gate input for second P-MOSFET; electrically isolated from G1 |
| S2 | Source of Channel 2 | Common source node for Channel 2; may be tied to S1 or used separately |
| D2 | Drain of Channel 2 | Second switched output; enables dual independent or paralleled load control |
| NC | No Connect | Pins 3 and 6 are internally unconnected; must remain floating or grounded per layout guidelines |
| Thermal Pad | Case / Heat Sink | Exposed copper pad on bottom surface; improves thermal resistance when soldered to PCB copper pour |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel integration | Two matched MOSFETs in single SO-8 footprint reduce board area by ~40% vs. discrete solutions |
| Trench HEXFET technology | Enables 0.018 Ω RDS(on) at -4.5 V VGS, supporting efficient 2.5 V logic-compatible gate drive |
| Low-profile package | Height <1.1 mm - suitable for space-constrained portable devices including wearables and IoT sensors |
| Lead-free construction | RoHS-compliant finish with Pb-free termination and halogen-free molding compound |
| Body diode optimization | Reverse recovery time (trr) ≤270 ns and Qrr ≤450 nC minimize switching losses in freewheeling paths |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
Use Scenario: Overcurrent and short-circuit protection in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Dual P-MOSFET acts as back-to-back switch to block reverse current and enable bidirectional fault isolation. Use Value: 0.018 Ω RDS(on) limits voltage drop to <162 mV at 9 A, preserving battery runtime and thermal margin. | Use Scenario: USB Type-C port power path control with automatic VBUS sourcing/sinking negotiation. IC Role / Device Role / Timing Role: Dual channel provides independent control of upstream and downstream power rails during role swap. Use Value: Matched VGS(th) ensures simultaneous turn-on timing, preventing bus contention during CC logic transitions. |
| Load Sharing in Dual-Battery Systems | Hot-Swap Controller Interface |
Use Scenario: Equalizing current between two parallel Li-ion cells during charging and discharge cycles. IC Role / Device Role / Timing Role: Each channel independently regulates current flow using external sense resistor feedback. Use Value: Ultra-low RDS(on) minimizes imbalance error (<±2%) across temperature range (-55 to +150°C). | Use Scenario: Inrush current limiting and fault disconnect in industrial 12 V/24 V hot-swap modules. IC Role / Device Role / Timing Role: P-MOSFET pair serves as controlled power switch between backplane and pluggable card. Use Value: 62.5 °C/W RθJA allows 2.0 W dissipation without heatsink on 2 oz copper PCB, simplifying thermal design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7851DP-T1-GE3 | RDS(on) = 0.022 Ω @ -4.5 V; SO-8 but no thermal pad; higher Qg (70 nC) | Lower thermal performance (RθJA = 75 °C/W); less suitable for sustained >5 A loads | Prefer where cost sensitivity outweighs thermal margin requirements |
| DMC3025LSD-13 | RDS(on) = 0.025 Ω @ -4.5 V; dual N-channel; requires level-shifting gate drive | N-channel topology demands bootstrap or charge-pump circuitry, increasing BOM count | Select only when existing design already uses N-channel drivers and layout accommodates level shifters |
Compared with Si7851DP-T1-GE3 and DMC3025LSD-13, IRF7324PBF offers superior thermal efficiency and gate-drive simplicity for battery-side P-channel switching, while maintaining pin-compatible SO-8 layout and lower total system component count.
Availability
IRF7324PBF is available at Aetrix Electronics and suitable for battery protection circuits, USB power delivery switches, dual-battery load sharing, and hot-swap controller interfaces requiring stable component supply and long-term manufacturability.
Supply support for IRF7324PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with headquarters in Munich, Germany.
The IRF7324PBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, low-voltage DC power switching in portable and battery-operated systems.
FAQ
What is the maximum safe operating voltage for IRF7324PBF in continuous DC blocking?
The absolute maximum drain-source voltage (VDS) is -20 V, verified per datasheet Section 1. This rating applies under static conditions with VGS = 0 V and ID ≤ 250 µA. Exceeding this value risks avalanche breakdown and permanent device failure, even with transient suppression.
Can IRF7324PBF be used in parallel configurations for higher current handling?
Yes - its matched dual-die structure and tight VGS(th) tolerance (-0.45 to -1.0 V) support current sharing between channels when gates and sources are tied together. However, individual channel derating to 7.1 A at 70°C ambient is required per datasheet thermal limits.
Does IRF7324PBF require external gate resistors for typical 100 kHz PWM switching?
No external gate resistor is mandatory, but a 10–22 Ω series resistor is recommended to dampen ringing caused by Qgd = 12–18 nC and PCB trace inductance. Without it, overshoot exceeding ±12 V VGS may trigger unintended turn-on or gate oxide stress.
How does the body diode forward voltage affect reverse-current protection in battery applications?
VSD = -1.2 V at -2.0 A and 25°C defines the forward drop during reverse conduction. In back-to-back P-MOSFET battery protection, this limits reverse leakage to <1 mA below -0.7 V, ensuring effective blocking without additional Schottky diodes.
IRF7324PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 9A
- Rds On (Max) @ Id, Vgs:
- 18mOhm @ 9A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 63nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2940pF @ 15V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7324PBF FAQ
1.How can I place an order for IRF7324PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7324PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7324PBF reliable?
The price and inventory of IRF7324PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7324PBF is usually 5 days.
3.What payment methods are accepted for IRF7324PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7324PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7324PBF?
IRF7324PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7324PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7324PBF?
For technical support, including IRF7324PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7324PBF requirements.
6.How does Aetrix verify that IRF7324PBF is sourced from the original manufacturer or authorized distributors?
All IRF7324PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7324PBF meets industry standards.
7.What is the process for return or replacement of IRF7324PBF?
All IRF7324PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7324PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7324PBF part is unused and in its original packaging.
Return procedure for IRF7324PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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