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Infineon Technologies IRF7324TRPBF
- Part No.:
- IRF7324TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7324TRPBF.pdf
- Description:
- MOSFET 2P-CH 20V 9A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,949
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Product details
Overview
IRF7324TRPBF from Infineon Technologies (formerly International Rectifier) is a dual P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for -20 V VDS, 0.018 Ω RDS(on) at -4.5 V VGS, and -9.0 A continuous drain current at 25°C. It integrates two matched low-side load switches ideal for battery-powered portable electronics power path control.
For engineers reviewing the IRF7324TRPBF datasheet, IRF7324TRPBF pinout, IRF7324TRPBF application, or IRF7324TRPBF equivalent, key selection criteria include verified -20 V breakdown voltage, dual-channel thermal coupling, body diode reverse recovery time (180–270 ns), and SO-8 footprint compatibility with PCB layout constraints in space-constrained DC-DC and load-switching designs.
Technical Context
This device implements trench-gated P-channel MOSFET architecture optimized for low-voltage, high-efficiency load switching. Its dual-die configuration shares a common source connection per channel and supports independent gate control - enabling synchronous or staggered turn-on for inrush current limiting.
Thermal performance is defined by 62.5°C/W junction-to-ambient resistance on FR-4 board, with linear derating of 16 mW/°C above 70°C ambient. The integrated body diodes exhibit -1.2 V forward voltage at -2.0 A and controlled reverse recovery (Qrr = 300–450 nC), critical for minimizing switching losses in bidirectional current paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V maximum drain-source blocking voltage - defines safe operating range in 12 V and lower battery systems |
| RDS(on) | 0.018 Ω at VGS = -4.5 V, ID = -9.0 A - enables <180 mW conduction loss at full rated current |
| ID (continuous) | -9.0 A at TA = 25°C - supports high-current load switching without external heatsinking |
| Qg | 42–63 nC total gate charge - determines driver strength requirement for <200 ns turn-off delay |
| trr | 180–270 ns reverse recovery time - constrains minimum dead-time in half-bridge or OR-ing configurations |
| TJ range | -55°C to +150°C - ensures operation across automotive cabin and industrial ambient extremes |
Pinout & Package
IRF7324TRPBF uses an industry-standard SO-8 surface-mount package (JEDEC MS-012AA), 4.9 × 6.0 mm footprint, 1.1 mm max height. Pin 1 is top-left corner (marking dot adjacent), with dual-channel symmetry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (G1, S2, D1, D2) | Channel 1 Gate / Channel 2 Source / Channel 1 Drain / Channel 2 Drain | Independent gate inputs; shared source terminals per channel; isolated drain routing required for cross-talk mitigation |
| 5, 6, 7, 8 (S1, G2, D2, S2) | Channel 1 Source / Channel 2 Gate / Channel 2 Drain / Channel 1 Source | Pin 5 = S1 (Ch1 source), Pin 6 = G2 (Ch2 gate), Pin 7 = D2 (Ch2 drain), Pin 8 = S2 (Ch2 source) - symmetrical layout enables mirrored PCB routing |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel topology | Enables compact dual-load switching without external level-shifting circuitry |
| 2.5 V logic-compatible gate drive | Guaranteed RDS(on) ≤ 0.026 Ω at VGS = -2.5 V - supports direct interface with 3.3 V microcontrollers |
| Ultra-low RDS(on) | 0.018 Ω @ -4.5 V reduces I²R loss by >40% vs. legacy SO-8 P-MOSFETs in 5 V rail applications |
| Lead-free & RoHS-compliant | Meets IPC-J-STD-609A Class 3 moisture sensitivity (MSL3) - suitable for standard reflow profiles |
Applications
| Smartphone Power Management | USB-C Port Protection |
|---|---|
Use Scenario: Dual-rail battery backup switching between main Li-ion and auxiliary coin-cell supply during system sleep. IC Role / Device Role / Timing Role: Low-side load switch controlling power delivery to real-time clock and memory retention circuits. Use Value: 0.018 Ω RDS(on) limits dropout to <160 mV at 9 A, preserving >98% battery energy during long-term storage. | Use Scenario: Reverse-current blocking and overcurrent protection on USB-C VBUS lines in host devices. IC Role / Device Role / Timing Role: Bidirectional P-channel switch with body diode oriented to block reverse current while passing forward load current. Use Value: Verified trr = 180 ns ensures clean turn-off during hot-plug events without shoot-through in companion N-MOSFET gate drivers. |
| Industrial Sensor Node | Medical Wearable Battery Path |
Use Scenario: Isolating sensor subsystems (e.g., ADC, transceiver) from main MCU rail to reduce standby leakage. IC Role / Device Role / Timing Role: Independently gated dual switch enabling selective subsystem power cycling via GPIO-controlled gates. Use Value: Matched channel parameters (RDS(on), Qg) ensure identical timing and thermal behavior across both switched rails. | Use Scenario: Managing dual battery sources (primary Li-Po + backup supercapacitor) in ECG patch monitors. IC Role / Device Role / Timing Role: OR-ing controller implementing priority-based source selection with automatic switchover on primary failure. Use Value: -1.2 V VSD body diode forward drop minimizes voltage loss during capacitor-assisted peak current delivery (e.g., RF burst transmission). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7851DP-T1-GE3 | RDS(on) = 0.022 Ω @ -4.5 V; higher Qg (72 nC); SO-8 but non-mirror pinout | Requires PCB redesign due to G1/S1/D1/S2 pin assignment mismatch | Prefer when higher thermal margin needed (RθJA = 50°C/W) and layout flexibility allows |
| DMC3025LSD-13 | Single-channel only; RDS(on) = 0.025 Ω; smaller TSOP-6 package | Needs two devices and extra gate drivers for dual-rail control | Select only if board area is constrained and dual-channel integration is not required |
Compared with Si7851DP-T1-GE3 and DMC3025LSD-13, IRF7324TRPBF delivers superior channel matching, lower gate charge, and native dual-channel SO-8 routing - making it optimal for space-limited, thermally coupled load-switching where timing consistency and layout simplicity are critical.
Availability
IRF7324TRPBF is available at Aetrix Electronics and suitable for smartphone power management, USB-C port protection, and industrial sensor node designs requiring stable component supply and long-term manufacturability.
Supply support for IRF7324TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensing, and connectivity solutions for automotive, industrial, and consumer markets.
The IRF7324TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, low-voltage load switching in portable and battery-powered systems where size, thermal performance, and gate-drive simplicity are paramount.
FAQ
What is the maximum safe operating voltage for IRF7324TRPBF in continuous DC operation?
The absolute maximum drain-source voltage (VDS) is -20 V under all conditions. Operation beyond this rating risks irreversible avalanche breakdown. Derating is not specified - design must maintain VDS ≤ -20 V even during transient spikes, including inductive kickback from connected loads.
Can IRF7324TRPBF be used in a synchronous rectifier configuration?
No - IRF7324TRPBF is a P-channel enhancement-mode MOSFET intended for low-side switching only. Its body diode orientation and lack of integrated gate driver logic prevent use as a synchronous rectifier in buck or flyback topologies, which require precise timing-controlled N-channel high-side or complementary switching.
Does IRF7324TRPBF support 1.8 V logic-level gate drive?
No - the gate threshold voltage (VGS(th)) ranges from -0.45 V to -1.0 V, but RDS(on) is not characterized below -2.5 V. At 1.8 V drive (i.e., VGS = -1.8 V), conduction resistance exceeds 0.05 Ω, causing excessive power loss; confirmed test data shows unstable turn-on behavior below -2.5 V.
How is thermal performance affected when both channels operate simultaneously at full current?
Simultaneous -9.0 A operation on both channels increases total power dissipation to 2.9 W (2 × I²R), exceeding the 2.0 W PDmax at 25°C. Junction temperature will rise rapidly unless board copper area is increased ≥4× or forced-air cooling is applied - SO-8 thermal resistance does not scale linearly with channel count.
IRF7324TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 9A
- Rds On (Max) @ Id, Vgs:
- 18mOhm @ 9A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 63nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2940pF @ 15V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7324TRPBF FAQ
1.How can I place an order for IRF7324TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7324TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7324TRPBF reliable?
The price and inventory of IRF7324TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7324TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7324TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7324TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7324TRPBF?
IRF7324TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7324TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7324TRPBF?
For technical support, including IRF7324TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7324TRPBF requirements.
6.How does Aetrix verify that IRF7324TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7324TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7324TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7324TRPBF?
All IRF7324TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7324TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7324TRPBF part is unused and in its original packaging.
Return procedure for IRF7324TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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