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Infineon Technologies IRF7325PBF
- Part No.:
- IRF7325PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7325PBF.pdf
- Description:
- MOSFET 2P-CH 12V 7.8A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,548
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Product details
Overview
IRF7325PBF from International Rectifier is a dual P-channel enhancement-mode HEXFET® power MOSFET in SO-8 package, rated for -12 V VDS, 24 mΩ RDS(on) at VGS = -4.5 V and -7.8 A ID, optimized for high-efficiency load switching in space-constrained DC-DC converters and battery protection circuits.
For engineers reviewing the IRF7325PBF datasheet, IRF7325PBF pinout, IRF7325PBF application, or IRF7325PBF equivalent, key selection criteria include verified dual-die SO-8 thermal performance (RθJA = 62.5 °C/W), body diode reverse recovery (trr = 36–54 ns), gate charge (Qg = 22–33 nC), and low-threshold operation (VGS(th) = -0.40 to -0.90 V).
Technical Context
This dual P-channel MOSFET integrates two identical trench-structured silicon dies in a single SO-8 leadframe-modified package, enabling synchronous buck high-side switching or complementary half-bridge configurations without external isolation. Its ultra-low on-resistance is achieved via advanced processing, and its negative threshold voltage ensures reliable turn-on with standard logic-level gate drivers.
The device features an integrated source-drain body diode with VSD = -1.2 V at -2.0 A and controlled reverse recovery (Qrr = 28–42 nC), supporting efficient discontinuous conduction mode (DCM) operation. Thermal design is supported by validated junction-to-ambient and junction-to-drain thermal resistance values under defined PCB mounting conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -12 V - Maximum drain-source blocking voltage for low-voltage rail switching |
| RDS(on) | 24 mΩ @ VGS = -4.5 V, ID = -7.8 A - Enables <150 mW conduction loss at full rated current |
| ID (25°C) | -7.8 A - Continuous drain current capability with adequate heatsinking on 1-in² copper |
| Qg | 22–33 nC - Gate drive energy requirement determines minimum driver strength and switching speed |
| trr | 36–54 ns - Fast body diode recovery reduces switching losses in hard-commutated topologies |
| RθJA | 62.5 °C/W - Junction-to-ambient thermal resistance on standard FR-4 board defines safe operating area limits |
| VGS(th) | -0.40 to -0.90 V - Negative threshold enables direct interface with 0–3.3 V control signals |
Pinout & Package
IRF7325PBF uses a modified SO-8 package (JEDEC MS-012AA) with enhanced thermal leadframe and dual-die layout. The package height is <1.8 mm, compatible with vapor phase, infrared, and wave soldering processes.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain of Channel 1 | High-current output node for first MOSFET; connected internally to leadframe for improved thermal conduction |
| 2 (G1) | Gate of Channel 1 | Control input for first channel; requires ≤ ±8 V drive and exhibits 22–33 nC total gate charge |
| 3 (S2) | Source of Channel 2 | Reference node for second channel; tied to common source in half-bridge or load-switch configurations |
| 4 (S1) | Source of Channel 1 | Reference node for first channel; electrically isolated from S2 in dual independent operation |
| 5 (D2) | Drain of Channel 2 | High-current output node for second MOSFET; symmetric to D1 for balanced layout |
| 6 (G2) | Gate of Channel 2 | Independent control input for second channel; identical electrical characteristics to G1 |
| 7 (S2) | Source of Channel 2 | Duplicate S2 terminal for robust PCB routing; internally bonded to Pin 3 |
| 8 (D1) | Drain of Channel 1 | Duplicate D1 terminal for low-inductance high-current connection; internally bonded to Pin 1 |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel integration | Two matched MOSFETs in one SO-8 footprint reduce board area by >40% vs. discrete solutions |
| Trench process technology | Delivers 24 mΩ RDS(on) at -4.5 V, enabling high efficiency in 3.3 V–5 V gate-drive systems |
| Low-profile package | Height <1.8 mm supports ultra-thin portable and wearable power designs |
| Lead-free construction | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile requirements |
| Enhanced thermal leadframe | Reduces RθJL to 20 °C/W, improving power handling over standard SO-8 |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent shutdown in Li-ion battery packs with dual-cell monitoring. IC Role / Device Role / Timing Role: Dual P-MOSFET acts as back-to-back switch controlling charge/discharge paths with independent gate control. Use Value: 24 mΩ RDS(on) limits voltage drop to <190 mV at 8 A, preserving battery runtime and thermal margin. | Use Scenario: Hot-swap and fault-isolation switching in USB-C PD 3.0 power path with 5–20 V input range. IC Role / Device Role / Timing Role: High-side load switch managing VBUS enable/disable with fast turn-off (<200 ns fall time) during fault events. Use Value: -0.40 to -0.90 V VGS(th) allows direct control from microcontroller GPIO without level-shifting. |
| DC-DC Synchronous Buck Converter | Industrial I/O Module Protection |
Use Scenario: High-efficiency 3.3 V or 5 V output stage in point-of-load converters for FPGA or ASIC supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; body diode handles dead-time conduction. Use Value: 36–54 ns trr and 28–42 nC Qrr minimize shoot-through risk and recovery losses at 500 kHz–1 MHz switching. | Use Scenario: Field-side short-circuit and reverse-polarity protection in 24 V industrial digital input modules. IC Role / Device Role / Timing Role: P-channel high-side switch isolating field wiring from controller logic during fault conditions. Use Value: -12 V VDS rating and -39 A pulsed current support withstand inductive kickback up to 40 V transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7851DP-T1-GE3 | RDS(on) = 28 mΩ @ -4.5 V; higher Qg (38 nC); SO-8 package | Slightly lower efficiency at high current; longer switching times due to higher gate charge | Preferred when tighter gate charge matching to driver ICs is required over minimal RDS(on) |
| DMC2038LSD-13 | RDS(on) = 26 mΩ @ -4.5 V; lower VGS(th) (-0.3 to -1.0 V); same SO-8 footprint | Broader threshold distribution may require stronger gate pull-down in noise-prone environments | Selected where wider VGS(th) tolerance improves immunity to gate noise in industrial settings |
Compared with Si7851DP-T1-GE3 and DMC2038LSD-13, IRF7325PBF delivers the lowest RDS(on) and tightest VGS(th) window, making it optimal for high-density, high-efficiency 3.3 V–5 V gate-drive applications where thermal headroom is constrained.
Availability
IRF7325PBF is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and industrial I/O protection circuits requiring stable component supply and long-term manufacturability.
Supply support for IRF7325PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
International Rectifier (now part of Infineon Technologies) is a pioneer in power semiconductor design, specializing in high-efficiency MOSFETs, IGBTs, and driver ICs for industrial, automotive, and computing markets.
The HEXFET® product line was developed to deliver ultra-low on-resistance and ruggedized switching performance in compact surface-mount packages for DC-DC conversion, motor control, and power management applications.
FAQ
What is the maximum continuous drain current for IRF7325PBF at 70°C case temperature?
The maximum continuous drain current is -6.2 A at TA = 70°C with VGS = -4.5 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package on standard PCBs and must be validated against actual board layout and airflow conditions.
Can IRF7325PBF be used in parallel configurations?
Yes - its negative temperature coefficient of RDS(on) (shown in Fig 4) promotes current sharing between paralleled devices. However, matched gate drive routing and symmetrical PCB layout are essential to avoid imbalance; gate resistors ≥10 Ω per channel are recommended to damp oscillation.
Does IRF7325PBF include ESD protection on its gate terminals?
No - the device does not integrate gate-oxide ESD protection. External Zener clamps (e.g., 5.6 V TVS) or series gate resistors (≥10 Ω) are required in systems exposed to handling or system-level ESD per IEC 61000-4-2 to prevent gate oxide rupture at ±8 V absolute maximum rating.
Is the SO-8 package of IRF7325PBF compatible with IPC-7351B land patterns?
Yes - the outline conforms to JEDEC MS-012AA, and the recommended land pattern matches IPC-7351B SOIC-8 (SOICN8X180-127P600X127-100) with 0.6 mm pad width, 1.27 mm pitch, and 2.0 mm length. Thermal pad exposure is not required, as the leadframe is not thermally enhanced beyond standard SO-8.
IRF7325PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 12V
- Current - Continuous Drain (Id) @ 25°C:
- 7.8A
- Rds On (Max) @ Id, Vgs:
- 24mOhm @ 7.8A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2020pF @ 10V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7325PBF FAQ
1.How can I place an order for IRF7325PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7325PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7325PBF reliable?
The price and inventory of IRF7325PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7325PBF is usually 5 days.
3.What payment methods are accepted for IRF7325PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7325PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7325PBF?
IRF7325PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7325PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7325PBF?
For technical support, including IRF7325PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7325PBF requirements.
6.How does Aetrix verify that IRF7325PBF is sourced from the original manufacturer or authorized distributors?
All IRF7325PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7325PBF meets industry standards.
7.What is the process for return or replacement of IRF7325PBF?
All IRF7325PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7325PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7325PBF part is unused and in its original packaging.
Return procedure for IRF7325PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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