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Infineon Technologies IRF7325TRPBF
- Part No.:
- IRF7325TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7325TRPBF.pdf
- Description:
- MOSFET 2P-CH 12V 7.8A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,786
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Product details
Overview
IRF7325TRPBF from Infineon Technologies (formerly International Rectifier) is a dual P-channel enhancement-mode HEXFET® power MOSFET in SO-8 package, rated for -12 V drain-source voltage, 24 mΩ RDS(on) at VGS = -4.5 V and ID = -7.8 A, with ultra-low on-resistance and integrated body diodes. It serves as a synchronous rectifier or load switch in compact DC-DC converters and battery protection circuits.
For engineers reviewing the IRF7325TRPBF datasheet, IRF7325TRPBF pinout, IRF7325TRPBF application, or IRF7325TRPBF equivalent, key selection criteria include verified RDS(on) at low gate drive (-4.5 V), pulsed current capability (-39 A), thermal resistance (62.5 °C/W), and SO-8 dual-die layout enabling space-efficient dual-switch topologies.
Technical Context
This device implements trench-gate MOSFET technology to achieve low conduction loss and fast switching performance. Its dual-die SO-8 construction integrates two independent P-channel switches sharing common source terminals (S1/S2), supporting high-side or complementary switching configurations without external paralleling.
The body diode exhibits VSD = -1.2 V at IS = -2.0 A and TJ = 25°C, with reverse recovery time (trr) of 36–54 ns and Qrr of 28–42 nC-enabling efficient operation in synchronous buck and OR-ing applications where diode conduction occurs during dead-time.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -12 V - Maximum blocking voltage for low-voltage rail switching (e.g., 3.3 V, 5 V, 12 V systems) |
| RDS(on) | 24 mΩ @ VGS = -4.5 V, ID = -7.8 A - Enables <180 mW conduction loss at 3 A continuous load |
| ID (TA = 25°C) | -7.8 A - Sustained current handling with standard PCB copper area (1 in²) |
| Qg | 22–33 nC - Gate charge compatible with low-power drivers (e.g., microcontroller GPIO or dedicated gate drivers) |
| RθJA | 62.5 °C/W - Thermal performance validated on 1 in² copper board; requires heatsinking above ~1.3 W dissipation |
| trr | 36–54 ns - Supports switching frequencies up to ~1 MHz in synchronous rectification without excessive diode loss |
Pinout & Package
IRF7325TRPBF uses an SO-8 surface-mount package with exposed drain pads optimized for thermal conduction. The leadframe is modified for enhanced thermal characteristics and dual-die integration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain 1 | Power output terminal for first MOSFET; electrically connected to package backside metal pad |
| 2 (G1) | Gate 1 | Control input for first MOSFET; threshold voltage -0.40 to -0.90 V enables logic-level drive |
| 3 (S2) | Source 2 | Common source node for second MOSFET; tied internally to pin 5 (S1) in dual configuration |
| 4 (D2) | Drain 2 | Power output terminal for second MOSFET; independent drain path supports dual-switch topology |
| 5 (S1) | Source 1 | Common source node for first MOSFET; bonded to same internal metallization as pin 3 (S2) |
| 6 (G2) | Gate 2 | Control input for second MOSFET; fully independent gate structure allows asynchronous control |
| 7 (S2) | Source 2 (redundant) | Secondary source connection for improved current distribution and solder joint reliability |
| 8 (D1) | Drain 1 (redundant) | Secondary drain connection for first MOSFET; enhances thermal and current-carrying capacity |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 24 mΩ at -4.5 V gate drive - reduces conduction loss by >30% vs. legacy P-channel MOSFETs in 5 V systems |
| Dual P-channel integration | Two independent switches in single SO-8 - eliminates board space and layout complexity of discrete dual-MOSFET solutions |
| Low-profile package | Height <1.8 mm - enables use in ultra-thin portable electronics and stacked PCB assemblies |
| Lead-free and RoHS-compliant | Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 - supports vapor-phase and wave soldering without preconditioning |
Applications
| Battery Protection Circuit | Synchronous Buck Converter |
|---|---|
Use Scenario: Reverse-current blocking and over-discharge cutoff in 2-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Dual P-MOSFET configured as back-to-back switches controlling charge/discharge paths. Use Value: 24 mΩ RDS(on) limits voltage drop to <150 mV at 6 A, preserving battery runtime and enabling accurate voltage monitoring. | Use Scenario: High-efficiency 5 V → 3.3 V step-down conversion in FPGA I/O power supplies. IC Role / Device Role / Timing Role: Bottom-side synchronous rectifier replacing Schottky diode in buck topology. Use Value: Body diode trr ≤ 54 ns and Qrr ≤ 42 nC minimize switching loss and EMI during dead-time conduction. |
| USB Power Delivery Switch | Industrial PLC Digital Output |
Use Scenario: Bidirectional 5 V/20 V power path control in USB-C PD sink applications. IC Role / Device Role / Timing Role: Dual-channel high-side load switch managing VBUS routing and fault isolation. Use Value: Independent gate control (G1/G2) allows precise sequencing of power-up/down transitions to meet USB PD specification timing. | Use Scenario: 24 V DC solid-state relay replacement in programmable logic controller output modules. IC Role / Device Role / Timing Role: Low-side driver for inductive loads with integrated freewheeling path via body diode. Use Value: -12 V VDS rating and -39 A pulsed current support safe turn-off of 1 A inductive loads with 100 V flyback spikes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7851DP-T1-GE3 | RDS(on) = 22 mΩ @ -4.5 V but higher Qg (42 nC); SO-8 with different pinout (G1/D1/S1/D2/G2/S2) | Requires PCB redesign due to non-identical pin mapping; better for lower-loss priority over layout reuse | Select when lowest conduction loss dominates over gate drive strength or layout compatibility |
| DMC3025LSD-13 | RDS(on) = 25 mΩ @ -4.5 V; higher RθJA (70 °C/W); same SO-8 pinout as IRF7325TRPBF | Drop-in replacement with identical footprint and gate drive compatibility; slightly higher thermal resistance | Select when exact mechanical fit and minimal design change are required, accepting marginal thermal derating |
Compared with Si7851DP-T1-GE3 and DMC3025LSD-13, IRF7325TRPBF offers the best balance of low gate charge (22–33 nC), verified thermal performance (62.5 °C/W), and industry-standard SO-8 pinout-making it optimal for space-constrained, thermally sensitive designs requiring rapid prototyping and production continuity.
Availability
IRF7325TRPBF is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, industrial digital outputs, and synchronous DC-DC converters requiring stable component supply and long-term manufacturability.
Supply support for IRF7325TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon-based power devices and system-level energy efficiency.
The HEXFET® product line delivers trench-MOSFET technology for high-efficiency, low-voltage power switching-designed specifically for portable electronics, power adapters, and industrial control systems demanding compact size and robust thermal behavior.
FAQ
What is the maximum junction temperature for reliable operation?
The IRF7325TRPBF has a specified junction temperature range of -55°C to +150°C. Continuous operation at 150°C requires strict thermal management: power dissipation must be limited to 1.3 W at TA = 70°C, and PCB layout must include ≥1 in² of 2-oz copper connected to drain pads to maintain RθJA ≤ 62.5 °C/W.
Can IRF7325TRPBF be driven directly from a 3.3 V microcontroller GPIO?
No-its gate threshold voltage ranges from -0.40 V to -0.90 V, but full enhancement requires VGS ≤ -4.5 V for 24 mΩ RDS(on). A 3.3 V GPIO cannot produce sufficient negative gate drive; a level-shifting circuit or dedicated P-channel gate driver (e.g., TC4427 configured for high-side drive) is required to achieve specified on-resistance.
Is the body diode suitable for reverse polarity protection?
Yes-the integrated body diode has VSD = -1.2 V at -2.0 A and TJ = 25°C, with trr = 36–54 ns. It provides effective reverse-current blocking in battery-input circuits, though external Schottky diodes may be preferred where forward voltage drop below 0.5 V is mandatory.
Does IRF7325TRPBF support parallel operation of both channels?
Yes-both P-channel MOSFETs share common source terminals (pins 3 and 5) and have matched RDS(on) and thermal characteristics. Parallel use doubles current capacity to -15.6 A (continuous) and -78 A (pulsed), provided gate drive signals are synchronized and PCB layout ensures equal current sharing via symmetrical trace lengths and copper pours.
IRF7325TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 12V
- Current - Continuous Drain (Id) @ 25°C:
- 7.8A
- Rds On (Max) @ Id, Vgs:
- 24mOhm @ 7.8A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2020pF @ 10V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7325TRPBF FAQ
1.How can I place an order for IRF7325TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7325TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7325TRPBF reliable?
The price and inventory of IRF7325TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7325TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7325TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7325TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7325TRPBF?
IRF7325TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7325TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7325TRPBF?
For technical support, including IRF7325TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7325TRPBF requirements.
6.How does Aetrix verify that IRF7325TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7325TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7325TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7325TRPBF?
All IRF7325TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7325TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7325TRPBF part is unused and in its original packaging.
Return procedure for IRF7325TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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