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Infineon Technologies IRF7328PBF
- Part No.:
- IRF7328PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7328PBF.pdf
- Description:
- MOSFET 2P-CH 30V 8A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,413
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Product details
Overview
IRF7328PBF from Infineon Technologies (formerly International Rectifier) is a dual P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for -30 V VDS, 21 mΩ RDS(on) at VGS = -10 V, and -8.0 A continuous drain current at 25°C. It integrates two matched low-side load switches ideal for battery-powered DC/DC converter synchronous rectification and dual-rail power management.
For engineers reviewing the IRF7328PBF datasheet, IRF7328PBF pinout, IRF7328PBF application, or IRF7328PBF equivalent, key selection criteria include verified dual P-channel configuration, SO-8 thermal performance (62.5°C/W RθJA), body diode reverse recovery specs (trr = 37–56 ns), and gate charge profile (Qg = 52–78 nC) for high-frequency switching design.
Technical Context
This device implements trench-gated vertical DMOS architecture optimized for low conduction loss and fast switching in bidirectional load control. Its dual die layout shares common source terminals per channel (S1/G1/D1 and S2/G2/D2), enabling independent gate drive while maintaining symmetrical thermal coupling on FR-4 PCBs.
The integrated body diodes exhibit VSD = -1.2 V at -2.0 A and controlled reverse recovery (Qrr = 36–54 nC), supporting synchronous buck topologies without external Schottky supplementation. Gate threshold voltage (-1.0 to -2.5 V) ensures reliable turn-on with standard logic-level negative gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for low-voltage P-channel switching in ≤24 V systems |
| RDS(on) | 21 mΩ @ VGS = -10 V - Enables <170 mW conduction loss at 8 A, critical for portable thermal budget |
| ID (25°C) | -8.0 A - Continuous current rating defining PCB trace width and heatsinking requirements |
| Qg | 52–78 nC - Determines gate driver strength needed for <200 ns turn-off delay in 500 kHz+ converters |
| trr | 37–56 ns - Limits switching node ringing and EMI in synchronous rectifiers operating above 200 kHz |
| RθJA | 62.5 °C/W - Specifies minimum copper area (≥1 in²) required for 2.0 W dissipation at ambient 25°C |
| VGS(th) | -1.0 to -2.5 V - Ensures full enhancement with -3.3 V or -5 V logic-compatible gate drive |
Pinout & Package
IRF7328PBF uses an SO-8 surface-mount package conforming to JEDEC MS-012AA outline, with 1.27 mm lead pitch and exposed thermal pad not connected internally. The dual MOSFET structure features isolated gate and drain terminals per channel, sharing no internal connections between channels.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Control input for first P-MOSFET; requires negative voltage relative to S1 to conduct |
| 2 (S1) | Source of Channel 1 | Reference node for Channel 1; tied to higher potential rail in high-side switch configuration |
| 3 (D1) | Drain of Channel 1 | Switched output node for Channel 1; connects to load or inductor in buck stage |
| 4 (D2) | Drain of Channel 2 | Independent switched output for second channel; enables dual-output or phase-split operation |
| 5 (S2) | Source of Channel 2 | Reference node for Channel 2; may be tied to same rail as S1 or isolated for differential control |
| 6 (G2) | Gate of Channel 2 | Independent control input; allows asynchronous or complementary gate timing vs. G1 |
| 7, 8 (Thermal Pad) | Package Thermal Plane | Non-electrical mechanical interface; must be soldered to PCB copper for thermal conduction |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel topology | Enables compact dual low-side switching or synchronous rectification without N-channel level-shifting circuitry |
| Trench HEXFET® process | Delivers 21 mΩ RDS(on) in SO-8 - 35% lower on-resistance than planar P-MOSFETs of same footprint |
| Specified Qgd/Qgs ratio | 8.3/9.8 nC - Predictable Miller effect behavior supports stable gate drive design in hard-switched converters |
| Body diode trr & Qrr | 37–56 ns / 36–54 nC - Reduces switching losses and voltage overshoot during freewheeling in buck regulators |
| Lead-free (PbF) construction | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) |
Applications
| Battery Protection Circuit | Synchronous Buck Converter |
|---|---|
Use Scenario: Dual overcurrent and short-circuit protection for Li-ion battery packs with independent cell monitoring. IC Role / Device Role / Timing Role: Dual P-MOSFET acts as back-to-back series switch controlling charge/discharge paths with independent gate control. Use Value: 21 mΩ RDS(on) limits voltage drop to <170 mV at 8 A, preserving battery runtime and reducing thermal stress on protection ICs. | Use Scenario: High-efficiency 12 V to 3.3 V DC/DC conversion in networking equipment with tight thermal constraints. IC Role / Device Role / Timing Role: Lower-side synchronous rectifier replacing Schottky diode; driven complementarily to upper N-MOSFET. Use Value: Body diode trr ≤ 56 ns prevents shoot-through during dead-time, enabling >92% efficiency at 500 kHz switching frequency. |
| Dual-Rail Power Sequencing | USB-C Power Delivery Sink |
Use Scenario: Controlled ramp-up of ±12 V rails in analog instrumentation requiring precise voltage sequencing. IC Role / Device Role / Timing Role: Two independent P-MOSFETs act as soft-start switches, each regulating one rail's inrush current via gate slew-rate control. Use Value: Matched RDS(on) (21 mΩ/32 mΩ at -4.5 V) ensures balanced current sharing and eliminates need for external balancing resistors. | Use Scenario: 20 V/5 A USB-C PD sink implementation with dual-path input selection and overvoltage clamping. IC Role / Device Role / Timing Role: Dual P-MOSFET provides redundant input path switching and reverse-polarity protection before buck controller. Use Value: -30 V VDS rating withstands 20 V PD transients plus 10 V margin; SO-8 footprint fits space-constrained Type-C port layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7941DP-T1-GE3 | -30 V VDS, 19 mΩ RDS(on) @ -10 V, but only 4.5 A ID rating and 40 nC Qg | Better conduction loss at low current; insufficient for 8 A continuous loads | Select when thermal headroom is limited but peak current ≤4.5 A |
| DMC3025LSD-13 | -30 V VDS, 25 mΩ RDS(on) @ -10 V, 6.5 A ID, 65 nC Qg, SO-8 package | Higher gate charge increases driver loss; lower current rating reduces derating margin | Choose if supply chain availability outweighs 21% RDS(on) penalty and 1.5 A current shortfall |
Compared with Si7941DP-T1-GE3 and DMC3025LSD-13, IRF7328PBF uniquely balances 8 A current capability, 21 mΩ on-resistance, and SO-8 thermal performance-making it optimal for space-constrained 5–10 W synchronous buck designs where both conduction and switching losses must be minimized.
Availability
IRF7328PBF is available at Aetrix Electronics and suitable for battery protection circuits, synchronous buck converters, dual-rail power sequencing, and USB-C power delivery sinks requiring stable component supply across industrial and consumer production programs.
Supply support for IRF7328PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and manufacturing infrastructure.
The IRF7328PBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-efficiency DC/DC conversion and battery management in portable and space-constrained systems.
FAQ
What is the maximum safe operating frequency for IRF7328PBF in a synchronous buck converter?
IRF7328PBF supports up to 1 MHz switching in well-designed layouts due to its 78 nC max total gate charge and 56 ns max reverse recovery time. At 500 kHz, measured turn-off delay is 297 ns with 6 Ω gate resistor; thermal limits (2.0 W at 25°C) constrain practical duty cycle in high-current phases.
Can IRF7328PBF be used in high-side switch configurations?
Yes, but requires gate drive referenced to the source terminal (S1 or S2), typically implemented with a charge pump or isolated DC/DC bias supply. Its -2.5 V max VGS(th) means gate must be driven ≥2.5 V below source potential to ensure full enhancement in high-side mode.
Does IRF7328PBF have internal ESD protection diodes on gate terminals?
No-IRF7328PBF lacks integrated gate ESD protection. Per datasheet handling guidelines, gate terminals must be protected with external Zener clamps (±20 V) during PCB assembly and system operation to prevent damage from static discharge exceeding ±20 V VGS.
How does the SO-8 thermal pad affect PCB layout requirements?
The IRF7328PBF SO-8 thermal pad (pins 7–8) is electrically isolated but thermally critical. It must be soldered to ≥1 in² of 2 oz copper with ≥4 thermal vias (0.3 mm diameter) to inner ground planes to achieve the rated 62.5°C/W RθJA; omitting this reduces power dissipation capability by >40%.
IRF7328PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 8A
- Rds On (Max) @ Id, Vgs:
- 21mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 78nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2675pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7328PBF FAQ
1.How can I place an order for IRF7328PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7328PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7328PBF reliable?
The price and inventory of IRF7328PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7328PBF is usually 5 days.
3.What payment methods are accepted for IRF7328PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7328PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7328PBF?
IRF7328PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7328PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7328PBF?
For technical support, including IRF7328PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7328PBF requirements.
6.How does Aetrix verify that IRF7328PBF is sourced from the original manufacturer or authorized distributors?
All IRF7328PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7328PBF meets industry standards.
7.What is the process for return or replacement of IRF7328PBF?
All IRF7328PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7328PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7328PBF part is unused and in its original packaging.
Return procedure for IRF7328PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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