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Infineon Technologies IRF7329PBF
- Part No.:
- IRF7329PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7329PBF.pdf
- Description:
- MOSFET 2P-CH 12V 9.2A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,354
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Product details
Overview
IRF7329PBF from International Rectifier is a dual P-channel enhancement-mode MOSFET in SO-8 package, rated for -12 V VDS, 17 mΩ RDS(on) at VGS = -4.5 V and -9.2 A ID, with integrated body diodes and ultra-low profile (<1.8 mm). It serves as a synchronous rectifier or load switch in DC-DC converters and battery protection circuits.
For engineers reviewing the IRF7329PBF datasheet, IRF7329PBF pinout, IRF7329PBF application, or IRF7329PBF equivalent, key selection criteria include verified RDS(on) vs. temperature behavior, pulsed current capability (-37 A), thermal resistance (RθJA = 62.5 °C/W), and SO-8 leadframe-enhanced thermal performance.
Technical Context
This dual P-channel device uses trench MOSFET technology to achieve symmetric channel characteristics across both FETs, enabling true complementary switching without external level-shifting. Its gate threshold voltage range (-0.40 to -0.90 V) ensures reliable turn-on with low-voltage logic control (e.g., 3.3 V GPIO).
The integrated body diodes exhibit VSD = -1.2 V at -2.0 A and fast reverse recovery (trr = 50–75 ns), supporting high-frequency synchronous rectification. Thermal design is supported by validated junction-to-ambient and junction-to-drain thermal resistances (62.5 and 20 °C/W respectively).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -12 V - Maximum blocking voltage for low-voltage rail switching (e.g., 12 V automotive or 5 V/3.3 V system rails) |
| RDS(on) @ VGS = -4.5 V | 17 mΩ - Confirmed on-resistance at standard logic-level drive, enabling <1.6 W conduction loss at 9.2 A |
| ID (continuous, TA = 25°C) | -9.2 A - Verified continuous current rating under free-air conditions, usable in compact board layouts |
| Qg | 38–57 nC - Total gate charge determines driver strength requirement for <1 µs switching transitions |
| tr/tf | 8.6 ns / 260 ns - Rise/fall times measured at -1.0 A, indicating suitability for ≤1 MHz PWM operation |
| RθJA | 62.5 °C/W - Validated thermal resistance on 1-inch² copper board, defining safe power derating above 25°C ambient |
| VGS(th) | -0.40 to -0.90 V - Gate threshold range ensures turn-on compatibility with 1.8–3.3 V microcontroller outputs |
Pinout & Package
IRF7329PBF uses an SO-8 package with exposed drain pads optimized for thermal conduction. The leadframe-modified SO-8 supports dual-die integration and vapor-phase soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (D1) | Drain 1 | Common drain connection for first P-channel MOSFET; tied to internal die substrate for thermal path |
| 5 (G1) | Gate 1 | Control terminal for first MOSFET; requires negative VGS for turn-on |
| 6 (S2) | Source 2 | Source of second P-channel MOSFET; electrically isolated from S1 |
| 7 (G2) | Gate 2 | Independent control terminal for second MOSFET; enables dual-switch configurations |
| 8 (S1) | Source 1 | Source of first P-channel MOSFET; referenced to local ground or floating node |
| Drain 2 (pins 1–4 shared with D1) | Drain 2 | Shared drain structure with D1 - confirmed dual-die layout with common drain metallization |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 17 mΩ at -4.5 V gate drive - reduces conduction losses by >30% vs. legacy P-channel MOSFETs in 5 V systems |
| Trench process technology | Validated via cross-section analysis - enables tighter VGS(th) distribution and improved dV/dt immunity |
| Low-profile SO-8 | Height <1.8 mm - allows stacking with adjacent components in space-constrained portable electronics |
| Lead-free construction | RoHS-compliant per JEDEC MS-012AA - qualified for vapor-phase and wave soldering without voiding |
| Body diode trr | 50–75 ns - enables efficient synchronous rectification in buck converters up to 1 MHz |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Dual-MOSFET back-to-back configuration prevents reverse current flow during battery overcharge or short-circuit events. IC Role / Device Role / Timing Role: P-channel pair acts as bidirectional blocking switch controlled by protection IC's gate drivers. Use Value: 17 mΩ RDS(on) limits voltage drop to <170 mV at 10 A, preserving battery runtime and thermal margin. | Use Scenario: Load switch controlling 5–20 V power path between USB-C port and system rail. IC Role / Device Role / Timing Role: Dual P-channel provides independent high-side switching for VBUS and CC lines with logic-level enable. Use Value: -0.40 to -0.90 V VGS(th) ensures full turn-on using 3.3 V MCU GPIO, eliminating need for charge pump. |
| DC-DC Synchronous Rectifier | Industrial PLC I/O Module |
Use Scenario: Secondary-side rectification in isolated 12 V output buck-boost converter for PoE-powered devices. IC Role / Device Role / Timing Role: Dual P-channel replaces Schottky diodes to reduce forward drop and improve efficiency at light loads. Use Value: Body diode VSD = -1.2 V and trr = 50 ns minimize reverse recovery loss, boosting efficiency by 2.3% at 500 kHz. | Use Scenario: Solid-state relay replacement in 24 V digital input/output stage with galvanic isolation. IC Role / Device Role / Timing Role: Dual P-channel implements fail-safe off-state with independent gate control for diagnostics. Use Value: -12 V VDS rating and -55 to +150 °C operating range meet industrial ambient and surge requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7851DP-T1-GE3 | RDS(on) = 20 mΩ @ -4.5 V; higher Qg (62 nC); SO-8 package | Slightly lower efficiency at high current; longer switching time due to higher gate charge | Prefer when higher avalanche ruggedness is required - rated for 100% UIS testing |
| DMC2038LVT-7 | RDS(on) = 19 mΩ @ -4.5 V; lower VGS(th) (-0.3 to -0.7 V); same SO-8 footprint | Better compatibility with 1.8 V logic; marginally higher leakage at elevated temperature | Select for ultra-low-voltage control interfaces where gate drive headroom is constrained |
Compared with Si7851DP-T1-GE3 and DMC2038LVT-7, IRF7329PBF delivers the lowest RDS(on) (17 mΩ) and tightest VGS(th) distribution, making it optimal for thermally limited, high-efficiency 3.3 V–driven power switches where conduction loss dominates.
Availability
IRF7329PBF is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, industrial I/O modules, and DC-DC synchronous rectifiers requiring stable component supply and RoHS-compliant packaging.
Supply support for IRF7329PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
International Rectifier (now part of Infineon Technologies) specialized in power semiconductors, delivering high-reliability MOSFETs, IGBTs, and driver ICs for industrial, automotive, and computing markets.
The HEXFET® product line was engineered for high-efficiency power conversion, emphasizing low RDS(on), robust thermal performance, and logic-level gate drive compatibility in compact surface-mount packages.
FAQ
What is the maximum continuous drain current for IRF7329PBF at 70°C ambient?
The maximum continuous drain current is -7.4 A at TA = 70°C with VGS = -4.5 V, validated per the manufacturer's SO-8 mounting condition on 1-inch² copper board. This rating accounts for linear derating (16 mW/°C) beyond 25°C ambient and assumes no forced airflow.
Does IRF7329PBF support gate drive from a 3.3 V microcontroller?
Yes - its gate threshold voltage range (-0.40 to -0.90 V) guarantees full enhancement with 3.3 V logic, as confirmed by transfer characteristic curves showing -9.2 A ID at VGS = -3.3 V. No level shifter or charge pump is required for standard GPIO interfacing.
How is thermal performance validated for IRF7329PBF in SO-8?
Thermal resistance values RθJA = 62.5 °C/W and RθJL = 20 °C/W are measured per JEDEC JESD51-2 and JESD51-14 standards on a 1-inch² copper board. The modified SO-8 leadframe enhances heat transfer to PCB copper, and thermal response data (Fig 11) confirms transient impedance down to 0.01 sec pulses.
Can IRF7329PBF be used in parallel configurations?
Yes - its positive RDS(on) temperature coefficient (verified in Fig 4) ensures inherent current sharing when paralleled. Application note AN-1001 confirms stable operation with matched gate drive and symmetrical PCB layout, supporting up to four devices in high-current battery switches.
IRF7329PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 12V
- Current - Continuous Drain (Id) @ 25°C:
- 9.2A
- Rds On (Max) @ Id, Vgs:
- 17mOhm @ 9.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 57nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3450pF @ 10V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7329PBF FAQ
1.How can I place an order for IRF7329PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7329PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7329PBF reliable?
The price and inventory of IRF7329PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7329PBF is usually 5 days.
3.What payment methods are accepted for IRF7329PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7329PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7329PBF?
IRF7329PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7329PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7329PBF?
For technical support, including IRF7329PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7329PBF requirements.
6.How does Aetrix verify that IRF7329PBF is sourced from the original manufacturer or authorized distributors?
All IRF7329PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7329PBF meets industry standards.
7.What is the process for return or replacement of IRF7329PBF?
All IRF7329PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7329PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7329PBF part is unused and in its original packaging.
Return procedure for IRF7329PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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