Infineon Technologies IRF7329TRPBF

Overview

IRF7329TRPBF from Infineon Technologies (formerly International Rectifier) is a dual P-channel enhancement-mode MOSFET in SO-8 package, designed for high-efficiency synchronous buck converters and load-switching applications. It features -12 V V_DS, 17 mΩ R_DS(on) at V_GS = -4.5 V and -9.2 A I_D, with ultra-low gate charge (38 nC typical) and integrated body diodes optimized for reverse recovery (t_rr = 50 ns).

For engineers reviewing the IRF7329TRPBF datasheet, IRF7329TRPBF pinout, IRF7329TRPBF application, or IRF7329TRPBF equivalent, key selection criteria include dual-channel thermal coupling, symmetric R_DS(on) matching (<±5%), SO-8 leadframe-enhanced thermal resistance (R_θJA = 62.5 °C/W), and compatibility with 1.8 V logic-level gate drive in space-constrained DC/DC modules.

Technical Context

This dual P-channel MOSFET uses trench-gate silicon process to achieve matched on-resistance and fast switching in a single SO-8 footprint. Its symmetrical channel pairing enables balanced current sharing in high-side synchronous rectification and dual low-side switching topologies.

The device integrates two independent P-MOSFETs sharing common source terminals per channel (S1/G1/D1 and S2/G2/D2), with separate gate control enabling independent turn-on/turn-off sequencing. Body diode parameters (V_SD = -1.2 V, Q_rr = 48 nC) are characterized for bidirectional conduction in buck converter freewheeling paths.

Key Specifications

Pinout & Package

IRF7329TRPBF is housed in a thermally enhanced SO-8 package (JEDEC MS-012AA), featuring a customized leadframe for improved junction-to-drain thermal path (R_θJL = 20 °C/W) and dual-die integration. The package height is <1.8 mm, supporting low-profile board designs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Compared with Si7852DP-T1-GE3 and DMC3025LSD-13, IRF7329TRPBF offers optimal balance of low R_DS(on), moderate gate charge, and proven robustness in industrial VRMs-making it ideal where thermal density and gate drive simplicity are prioritized over marginal conduction or switching extremes.

Availability

IRF7329TRPBF is available at Aetrix Electronics and suitable for server VRMs, USB-C PD load switching, industrial PLC I/O modules, and automotive body control units requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF7329TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

The IRF7329TRPBF belongs to Infineon's HEXFET® P-channel MOSFET product line, engineered for high-efficiency, space-constrained DC/DC conversion and intelligent load switching in industrial and computing power systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IRF7329TRPBF has a specified junction temperature range of -55°C to +150°C. For continuous operation, the absolute maximum steady-state T_J is 150°C, but derating is required above 25°C ambient per the linear derating factor of 16 mW/°C. At T_A = 70°C, maximum power dissipation drops to 1.3 W to maintain T_J ≤ 150°C.

Can IRF7329TRPBF be used in a single-ended flyback configuration?

No - IRF7329TRPBF is a dual P-channel MOSFET intended for low-side or synchronous rectifier roles, not high-voltage primary-side switching. Its -12 V V_DS rating is insufficient for flyback primary circuits, which typically require ≥500 V devices. It is suited only for secondary-side synchronous rectification in low-voltage flyback outputs.

How are the source terminals internally connected between channels?

Pins 1, 4, 7, and 8 are electrically connected to form a common source plane for both P-MOSFET channels. This configuration simplifies PCB layout for shared-source topologies like half-bridge drivers or dual low-side switches, eliminating need for external source bus traces while maintaining independent gate and drain routing.

Is the body diode suitable for reverse-current freewheeling in buck converters?

Yes - the integrated body diode is characterized with V_SD = -1.2 V at -2.0 A and t_rr = 50 ns (typical), making it suitable for controlled freewheeling in synchronous buck converters operating up to 1 MHz. However, its Q_rr of 48 nC necessitates careful dead-time optimization to avoid shoot-through during gate transitions.