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Infineon Technologies IRF7331
- Part No.:
- IRF7331
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7331.pdf
- Description:
- MOSFET 2N-CH 20V 7A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,609
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Product details
Overview
IRF7331 from International Rectifier is a dual N-channel enhancement-mode MOSFET in SO-8 package, rated for 20 V VDS, 7.0 A continuous drain current at 4.5 VGS, and 30 mΩ RDS(on) at VGS = 4.5 V. It integrates two matched devices for synchronous rectification and load switching in portable power management circuits.
For engineers reviewing the IRF7331 datasheet, IRF7331 pinout, IRF7331 application, or IRF7331 equivalent, key selection criteria include low RDS(on) at logic-level gate drive, dual-die thermal coupling in SO-8, body diode recovery (trr = 31–47 ns), and suitability for battery protection ICs and DC-DC converter high-side/low-side pairs.
Technical Context
This device implements two independent N-channel HEXFET® power MOSFETs on a single SO-8 leadframe with shared thermal path. Each channel supports 20 V breakdown, 7.0 A continuous conduction at TA = 25°C, and exhibits 0.030 Ω typical RDS(on) when driven with 4.5 V gate voltage.
Its gate charge profile (Qg = 13–20 nC, Qgd = 2.1 nC) enables fast switching in high-frequency DC-DC topologies, while the integrated body diodes feature VSD = 1.2 V at 2.0 A and trr ≤ 47 ns - critical for minimizing shoot-through loss in synchronous buck stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - maximum blocking voltage for battery-input and 3.3/5 V rail switching |
| RDS(on) @ 4.5 VGS | 30 mΩ - enables <150 mW conduction loss at 7 A in compact layouts |
| ID (continuous) | 7.0 A @ TA = 25°C - supports high-current load switches without external heatsinking |
| Qg | 13–20 nC - determines gate driver strength requirement for <100 ns turn-on in 500 kHz+ converters |
| trr | 31–47 ns - limits reverse recovery energy loss during synchronous rectification |
| Thermal RθJA | 62.5 °C/W - defines junction-to-ambient temperature rise under standard PCB mounting |
| VGS(th) | 0.6–1.2 V - ensures reliable turn-on with 1.8 V or 3.3 V logic controllers |
Pinout & Package
IRF7331 uses an SO-8 surface-mount package with exposed drain pads for enhanced thermal performance. The leadframe is optimized for vapor-phase and wave soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Controls first N-MOSFET; referenced to S1 for local gate drive |
| 2 (S1) | Source of Channel 1 | Return path for Channel 1; electrically isolated from S2 |
| 3 (D1) | Drain of Channel 1 | High-side switch node; internally connected to exposed pad |
| 4 (D2) | Drain of Channel 2 | Second high-side or low-side node; shares thermal pad with D1 |
| 5 (S2) | Source of Channel 2 | Return path for Channel 2; independent of S1 |
| 6 (G2) | Gate of Channel 2 | Independent control input for second MOSFET |
| 7, 8 (Exposed Pad) | Common Drain Thermal Plane | Primary heat dissipation path; must be soldered to PCB copper pour |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at 4.5 VGS | 30 mΩ per channel - reduces I²R losses in space-constrained battery-powered systems |
| Dual-channel SO-8 integration | Two matched N-MOSFETs in one footprint - eliminates layout mismatch and saves >30% board area vs. discrete pairs |
| Logic-level gate threshold | VGS(th) max = 1.2 V - ensures full enhancement with 1.8 V microcontroller GPIOs |
| Fast body diode recovery | trr ≤ 47 ns - minimizes cross-conduction risk in synchronous buck and H-bridge motor drivers |
| Enhanced thermal leadframe | RθJL = 42 °C/W - improves power handling by 2.5× over standard SO-8 for same PCB area |
Applications
| Battery Protection Circuit | Synchronous Buck Converter |
|---|---|
Use Scenario: Overcurrent and short-circuit protection in Li-ion battery packs using dedicated protection ICs. IC Role / Device Role: Dual N-MOSFET pair acts as back-to-back switches controlling charge/discharge paths. Use Value: Low 30 mΩ RDS(on) limits voltage drop across protection FETs, preserving battery runtime and enabling accurate current sensing. | Use Scenario: High-efficiency 3.3 V or 5 V output stage in portable DC-DC converters. IC Role / Device Role: High-side and low-side switches in synchronous buck topology operating at 500 kHz–2 MHz. Use Value: Matched channels and fast trr reduce dead-time losses and improve light-load efficiency beyond discrete solutions. |
| USB Power Delivery Switch | Motor Driver Half-Bridge |
Use Scenario: Input power path control for USB-C PD source applications requiring bidirectional current capability. IC Role / Device Role: Dual N-FETs configured as ideal diode controller interface with reverse current blocking. Use Value: Independent gate control (G1/G2) allows precise timing of forward/reverse conduction, preventing bus contention during PD negotiation. | Use Scenario: Low-voltage (<12 V) brushed DC motor control in robotics and consumer appliances. IC Role / Device Role: One channel as high-side switch, the other as low-side switch in half-bridge configuration. Use Value: Shared thermal pad maintains balanced junction temperatures between switches during PWM operation, improving reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP | RDS(on) = 29 mΩ @ 4.5 VGS; Qg = 15 nC; SO-8 with exposed drain | Higher gate charge increases driver loss; identical thermal design envelope | Preferred where tighter RDS(on) tolerance is required, but requires stronger gate driver |
| DMN3025LSD | RDS(on) = 25 mΩ @ 4.5 VGS; VDS = 30 V; higher voltage margin but larger die size | Higher VDS rating adds cost and capacitance; less optimal for 20 V systems | Chosen only if future-proofing for 24 V input or higher transient immunity is needed |
Compared with Si7852DP and DMN3025LSD, IRF7331 offers the best balance of ultra-low RDS(on), minimal gate charge, and proven thermal performance in 20 V battery management - making it optimal for space- and efficiency-critical portable designs.
Availability
IRF7331 is available at Aetrix Electronics and suitable for battery protection circuits, synchronous buck converters, USB power delivery switches, and motor driver half-bridges requiring stable component supply and consistent parametric performance across production lots.
Supply support for IRF7331 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
International Rectifier (now part of Infineon Technologies) is a pioneer in power semiconductor design, specializing in high-efficiency MOSFETs, IGBTs, and driver ICs for power conversion and control.
The HEXFET® product line was developed specifically for high-current, low-voltage switching applications including battery management, DC-DC regulation, and motor control - emphasizing low RDS(on), fast switching, and robust thermal packaging.
FAQ
What is the maximum continuous drain current for each channel at 70°C ambient?
Each channel supports 5.5 A continuous drain current at TA = 70°C and VGS = 4.5 V. This derating reflects the 16 mW/°C linear derating factor applied to the 2.0 W power dissipation limit at 25°C, ensuring safe operation without forced cooling in typical PCB layouts.
Can IRF7331 be used in a common-source configuration with shared source connection?
No - IRF7331 has fully isolated source terminals (S1 and S2). Its internal construction does not permit common-source connection. Each channel must be used with independent source routing, making it unsuitable for paralleled-source topologies but ideal for back-to-back or half-bridge arrangements.
Is the exposed pad electrically connected to any internal node?
Yes - the exposed pad is internally connected to both drains (D1 and D2) and serves as the primary thermal and electrical return path for drain current. It must be soldered to a large PCB copper pour tied to the system ground or power plane, depending on circuit topology.
What is the typical gate-to-source leakage current at 12 V?
The gate-to-source reverse leakage current is ≤ –100 nA at VGS = –12 V, and forward leakage is ≤ +100 nA at VGS = +12 V. These values ensure minimal gate bias error in high-impedance driver circuits and long-term stability in always-on battery-switch applications.
IRF7331 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 7A
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1340pF @ 16V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7331 FAQ
1.How can I place an order for IRF7331 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7331 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7331 reliable?
The price and inventory of IRF7331 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7331 is usually 5 days.
3.What payment methods are accepted for IRF7331?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7331 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7331?
IRF7331 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7331 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7331?
For technical support, including IRF7331 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7331 requirements.
6.How does Aetrix verify that IRF7331 is sourced from the original manufacturer or authorized distributors?
All IRF7331 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7331 meets industry standards.
7.What is the process for return or replacement of IRF7331?
All IRF7331 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7331, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7331 part is unused and in its original packaging.
Return procedure for IRF7331:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF7331 Tags
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