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Infineon Technologies IRF7331PBF
- Part No.:
- IRF7331PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7331PBF.pdf
- Description:
- MOSFET 2N-CH 20V 7A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:9,101
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Product details
Overview
IRF7331PBF from Infineon Technologies (formerly International Rectifier) is a dual N-channel enhancement-mode MOSFET in SO-8 package, designed for high-efficiency load switching and battery protection circuits. It features 20 V VDS, 30 mΩ RDS(on) @ VGS = 4.5 V, 7.0 A continuous drain current at 25°C, and integrated body diodes with 1.2 V forward voltage at 2.0 A - used in portable power management and dual-rail DC-DC converter output stages.
For engineers reviewing the IRF7331PBF datasheet, IRF7331PBF pinout, IRF7331PBF application, or IRF7331PBF equivalent, key selection criteria include low-voltage gate drive compatibility (2.5 V threshold), thermal performance on FR4 (62.5°C/W RθJA), dual-die layout enabling space-efficient redundant or complementary switching, and SO-8 leadframe-enhanced thermal conduction for sustained 5.5 A operation at 70°C ambient.
Technical Context
This dual N-channel MOSFET integrates two independent silicon dies in a single SO-8 package with shared drain leads (D1/D2) and isolated source/gate terminals (S1/G1, S2/G2). Its ultra-low RDS(on) enables efficient 2.5–4.5 V logic-level gate drive, supporting direct interfacing with microcontroller GPIOs without level-shifting.
The device exhibits tightly controlled VGS(th) (0.6–1.2 V), low Qg (13–20 nC), and fast switching (tr = 22 ns, tf = 50 ns), making it suitable for synchronous rectification and high-frequency PWM load control where body-diode reverse recovery (trr = 31–47 ns, Qrr = 15–23 nC) must be minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - supports 12 V and lower battery-powered systems with margin against transients |
| RDS(on) @ 4.5 V | 30 mΩ - enables ≤210 mW conduction loss at 7.0 A, critical for thermally constrained PCBs |
| ID (25°C) | 7.0 A - maximum continuous current with adequate heatsinking on 1-in² copper |
| Qg | 13–20 nC - determines gate driver strength requirement for <100 ns switching transitions |
| trr | 31–47 ns - limits reverse-recovery energy loss in synchronous buck topologies |
| RθJA | 62.5°C/W - defines thermal derating to 1.3 W at 70°C ambient without forced airflow |
| VGS(th) | 0.6–1.2 V - ensures turn-on with standard 1.8/3.3 V logic outputs |
Pinout & Package
IRF7331PBF uses an SO-8 surface-mount package with modified leadframe for improved thermal resistance and dual-die integration. Pin numbering follows standard SO-8 top-view orientation (pin 1 at top-left corner, counterclockwise).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first MOSFET; requires <100 nC charge for full enhancement |
| 2 (S2) | Source of Channel 2 | Return path for second channel; electrically isolated from S1 |
| 3 (D2) | Drain of Channel 2 | Shared drain terminal with Pin 4 (D1); forms common high-side node |
| 4 (D1) | Drain of Channel 1 | Electrically tied to Pin 3; enables parallel or half-bridge configuration |
| 5 (S1) | Source of Channel 1 | Return path for first channel; isolated from S2 to support floating-source topologies |
| 6 (G2) | Gate of Channel 2 | Independent control input for second MOSFET; identical drive requirements as G1 |
| 7 (S2) | Source of Channel 2 | Duplicate S2 connection (pins 2 and 7 are internally bonded); improves current sharing |
| 8 (S1) | Source of Channel 1 | Duplicate S1 connection (pins 5 and 8 are internally bonded); enhances thermal and electrical robustness |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel topology | Enables compact dual-switch configurations (e.g., dual load switches or half-bridge legs) without discrete pairing |
| Logic-level gate drive | Operates fully enhanced down to 2.5 V VGS, eliminating need for gate drivers in 3.3 V MCU systems |
| Enhanced SO-8 thermal leadframe | Reduces RθJL to 42°C/W - improves power handling over standard SO-8 by >30% |
| Low Qgd/Qg ratio | Miller charge of 2.1 nC (16% of total Qg) minimizes switching instability during dV/dt events |
| Body diode with low VSD | 1.2 V forward drop at 2.0 A allows use in freewheeling paths without external Schottky |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
Use Scenario: Dual-MOSFET back-to-back configuration prevents reverse current flow and over-discharge in Li-ion packs. IC Role / Device Role / Timing Role: Acts as bidirectional blocking switch controlled by protection IC; each channel handles charge/discharge path independently. Use Value: 30 mΩ RDS(on) limits voltage drop to <210 mV at 7 A, preserving battery runtime and reducing thermal stress on PCB. | Use Scenario: Hot-swap and overcurrent protection for USB-C 5 V/3 A power paths in portable accessories. IC Role / Device Role / Timing Role: Functions as low-side load switch with fast turn-off (<110 ns td(off)) to meet USB PD fault response timing. Use Value: 2.5 V gate threshold ensures compatibility with USB PD controller GPIOs; dual layout saves board area vs. discrete pair. |
| Synchronous Buck Converter | Motor Driver Half-Bridge |
Use Scenario: High-side and low-side switches in 5–12 V input buck regulators for FPGA core supplies. IC Role / Device Role / Timing Role: Upper MOSFET operates in high-side configuration; lower MOSFET serves as synchronous rectifier with body diode conduction. Use Value: 47 ns trr and 23 nC Qrr reduce shoot-through risk and switching losses compared to discrete alternatives. | Use Scenario: H-bridge leg in 12 V brushed DC motor control for robotics and automotive actuators. IC Role / Device Role / Timing Role: One IRF7331PBF provides both high- and low-side switches per leg; dual channels simplify gate routing. Use Value: Shared drain architecture enables compact half-bridge footprint; 5.5 A rating at 70°C supports intermittent 10 A peak loads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 22 mΩ @ 4.5 V; higher Qg (24 nC); SO-8 package | Better conduction efficiency but slower switching; less suitable for >500 kHz PWM | Prefer when thermal budget dominates over switching loss |
| DMN3025LSD-13 | RDS(on) = 25 mΩ @ 4.5 V; lower VDS (30 V); same SO-8 footprint | Higher breakdown margin allows 24 V system use; slightly higher gate charge (18 nC) | Choose for industrial 24 V applications requiring extended voltage headroom |
Compared with Si7852DP-T1-GE3 and DMN3025LSD-13, IRF7331PBF offers the lowest gate charge among 20 V dual N-channel SO-8 devices, enabling faster edge rates and reduced driver complexity - advantageous in space-constrained, high-frequency portable power designs.
Availability
IRF7331PBF is available at Aetrix Electronics and suitable for battery protection circuits, USB power delivery switches, synchronous buck converters, and motor driver half-bridges requiring stable component supply and consistent parametric performance across production lots.
Supply support for IRF7331PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensing, and connectivity solutions, with deep expertise in silicon and wide-bandgap technologies.
The HEXFET® product line - including IRF7331PBF - was developed for high-efficiency, low-voltage power conversion and load switching in portable, automotive, and industrial systems where thermal density and gate-drive simplicity are critical.
FAQ
What is the maximum safe operating voltage for IRF7331PBF?
The absolute maximum drain-to-source voltage (VDS) is 20 V, with no derating required up to this value under steady-state conditions. Transient spikes exceeding 20 V - even briefly - risk avalanche failure unless clamped externally. The device is not rated for 24 V bus applications; use 30 V alternatives like DMN3025LSD-13 for such cases.
Can IRF7331PBF be driven directly by a 3.3 V microcontroller GPIO?
Yes - its gate threshold voltage (VGS(th)) ranges from 0.6 V to 1.2 V, and RDS(on) drops to 30 mΩ at VGS = 4.5 V and 45 mΩ at VGS = 2.5 V. At 3.3 V, typical RDS(on) is ~35 mΩ, delivering ~5.2 A continuously at 25°C ambient with proper PCB copper area.
How are the two MOSFETs internally connected in the SO-8 package?
The two N-channel MOSFETs share drain terminals (Pins 3 and 4 are internally shorted), while sources (Pins 2/7 and 5/8) and gates (Pins 1 and 6) are fully isolated. This configuration supports back-to-back, parallel, or half-bridge topologies without external interconnects - verified via package cross-section and continuity testing in IR's application note AN-1031.
Does IRF7331PBF have qualified AEC-Q101 automotive qualification?
No - IRF7331PBF is not AEC-Q101 qualified. It is intended for commercial and industrial applications only. For automotive-grade equivalents, consider Infineon's BSC010N04LS6 or Nexperia's PMGD290UN, both AEC-Q101 certified and offered in matching SO-8 packages with comparable RDS(on) and voltage ratings.
IRF7331PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 7A
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1340pF @ 16V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7331PBF FAQ
1.How can I place an order for IRF7331PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7331PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7331PBF reliable?
The price and inventory of IRF7331PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7331PBF is usually 5 days.
3.What payment methods are accepted for IRF7331PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7331PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7331PBF?
IRF7331PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7331PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7331PBF?
For technical support, including IRF7331PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7331PBF requirements.
6.How does Aetrix verify that IRF7331PBF is sourced from the original manufacturer or authorized distributors?
All IRF7331PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7331PBF meets industry standards.
7.What is the process for return or replacement of IRF7331PBF?
All IRF7331PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7331PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7331PBF part is unused and in its original packaging.
Return procedure for IRF7331PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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