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Infineon Technologies IRF7331TR
- Part No.:
- IRF7331TR
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7331TR.pdf
- Description:
- MOSFET 2N-CH 20V 7A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,792
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Product details
Overview
IRF7331TR from Infineon Technologies (formerly International Rectifier) is a dual N-channel enhancement-mode MOSFET in SO-8 package, rated for 20 V VDS, 7.0 A continuous drain current at 4.5 VGS, and 30 mΩ RDS(on) at VGS = 4.5 V. It integrates two matched devices with shared thermal path, optimized for high-efficiency load switching in portable power management and battery protection circuits.
For engineers reviewing the IRF7331TR datasheet, IRF7331TR pinout, IRF7331TR application, or IRF7331TR equivalent, key selection criteria include its dual-die SO-8 thermal performance (RθJA = 62.5 °C/W), low gate charge (Qg = 13–20 nC), body diode forward voltage (VSD = 1.2 V), and pulsed current capability (IDM = 28 A).
Technical Context
This dual N-channel MOSFET uses HEXFET® silicon processed for ultra-low on-resistance per unit area. Its matched pair configuration supports synchronous rectification, load sharing, and H-bridge half-bridge topologies without external balancing components.
The SO-8 package features a customized leadframe to improve thermal conduction from junction to drain leads (RθJL = 42 °C/W) and enables board-space-efficient dual-device integration. Gate threshold voltage (VGS(th) = 0.6–1.2 V) ensures reliable turn-on with 2.5 V logic-level drive.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum blocking voltage for battery-side switching up to 2-cell Li-ion systems |
| RDS(on) @ 4.5 VGS | 30 mΩ - Enables ≤210 mW conduction loss at 7.0 A, critical for thermally constrained PCBs |
| ID (continuous, 25°C) | 7.0 A - Sustained current handling with 4.5 V gate drive, suitable for USB PD and power bank loads |
| Qg | 13–20 nC - Low total gate charge reduces driver power and switching losses in 500 kHz–1 MHz DC/DC stages |
| VGS(th) | 0.6–1.2 V - Ensures full enhancement with 1.8 V/3.3 V microcontroller GPIO without level-shifting |
| VSD (body diode) | 1.2 V @ 2.0 A - Limits reverse recovery energy (Qrr = 15–23 nC) in synchronous buck freewheeling |
| RθJA | 62.5 °C/W - Thermal resistance defines maximum ambient temperature for 2.0 W dissipation on standard 1-in² Cu board |
Pinout & Package
IRF7331TR is housed in a surface-mount SO-8 package with exposed drain pads for enhanced thermal transfer. The dual-die layout shares common source and gate connections across two independent channel pairs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain 1 / Drain 2 | Parallel-connected drain terminals for Channel 1 and Channel 2; electrically tied to exposed pad for thermal sinking |
| 5 | Source 1 | Source terminal of first N-channel MOSFET; used for low-side sensing or current monitoring |
| 6 | Gate 1 | Control input for first MOSFET; requires <12 V absolute max gate drive |
| 7 | Gate 2 | Independent control input for second MOSFET; enables asymmetric or interleaved switching |
| 8 | Source 2 | Source terminal of second N-channel MOSFET; isolated from Source 1 for differential load configurations |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel topology | Two matched MOSFETs in single SO-8 footprint reduce board area by >40% vs discrete solutions |
| Ultra-low RDS(on) | 30 mΩ @ 4.5 VGS minimizes I²R losses in high-current battery disconnect paths |
| Logic-level gate drive | Operates fully enhanced down to 2.5 VGS, compatible with 3.3 V microcontrollers and PMICs |
| Enhanced thermal leadframe | Custom SO-8 construction lowers RθJL to 42 °C/W, enabling higher sustained current on compact boards |
| Low Qgd/Qg ratio | Miller charge of 2.1 nC improves EMI behavior and reduces risk of shoot-through in bridge designs |
Applications
| Battery Protection Circuit | USB Type-C Power Delivery Switch |
|---|---|
Use Scenario: Dual-MOSFET configuration isolates battery from system during overvoltage, overcurrent, or short-circuit events. IC Role / Device Role / Timing Role: Acts as back-to-back N-channel switch replacing P-channel + N-channel solution; enables precise current-sense resistor placement between sources. Use Value: 30 mΩ RDS(on) limits voltage drop to <210 mV at 7 A, preserving battery runtime and thermal margin. | Use Scenario: Controls 5–20 V power path between USB-C port and host system under PD contract negotiation. IC Role / Device Role / Timing Role: Functions as bidirectional load switch with fast turn-on (<7.6 ns delay) and controlled slew rate (22 ns rise time). Use Value: 13–20 nC gate charge allows efficient driving from low-power PD controllers like FUSB302 without external buffers. |
| Power Bank Load Sharing | Synchronous Buck Converter High-Side Switch |
Use Scenario: Manages parallel charging/discharging paths between multiple Li-ion cells and system bus. IC Role / Device Role / Timing Role: Provides matched channel characteristics for balanced current distribution and thermal tracking between dual paths. Use Value: Matched VGS(th) (0.6–1.2 V) and RDS(on) ensure ≤5% current imbalance across channels at 5 A each. | Use Scenario: Replaces discrete high-side switch in 3–12 V input buck regulators operating at 500 kHz–1 MHz. IC Role / Device Role / Timing Role: Serves as high-side switch with integrated body diode for freewheeling; driven by bootstrap gate driver. Use Value: 1.2 V VSD and 31–47 ns trr limit reverse recovery losses, improving efficiency by ~1.2% at 5 A output. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 28 mΩ @ 4.5 VGS; Qg = 19 nC; SO-8 with exposed drain | Lower on-resistance but higher gate charge; identical pinout and thermal profile | Preferred when minimizing conduction loss dominates over switching loss in <300 kHz applications |
| DMN3022LSD-13 | RDS(on) = 32 mΩ @ 4.5 VGS; Qg = 11 nC; dual N-channel in SO-8 with separate sources | Lower gate charge improves high-frequency efficiency but slightly higher RDS(on) increases steady-state loss | Optimal for 1–2 MHz DC/DC where gate drive power and EMI are critical constraints |
Compared with Si7852DP-T1-GE3 and DMN3022LSD-13, IRF7331TR offers the best balance of low RDS(on), moderate Qg, and proven thermal reliability in battery management systems-making it the default choice for cost-sensitive, thermally constrained 2–7 A load switches.
Availability
IRF7331TR is available at Aetrix Electronics and suitable for battery protection circuits, USB Type-C power delivery switches, power bank load sharing, and synchronous buck converter high-side switches requiring stable component supply and long-term industrial availability.
Supply support for IRF7331TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap device physics.
The IRF7331TR belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, space-constrained power switching in portable and battery-powered systems.
FAQ
What is the maximum continuous drain current for IRF7331TR at 70°C ambient?
At TA = 70°C with VGS = 4.5 V, the continuous drain current is 5.5 A. This derating accounts for thermal limitations of the SO-8 package on standard FR-4 PCBs, where power dissipation drops from 2.0 W at 25°C to 1.3 W at 70°C due to linear derating factor of 16 mW/°C.
Does IRF7331TR support 2.5 V logic-level gate drive?
Yes. With VGS(th) ranging from 0.6 V to 1.2 V and RDS(on) = 45 mΩ at VGS = 2.5 V and ID = 5.6 A, IRF7331TR fully enhances using 2.5 V microcontroller outputs-enabling direct interface with low-voltage MCUs without gate drivers or level shifters.
How is thermal performance improved in the SO-8 package?
The SO-8 package uses a customized leadframe with enlarged drain paddle and internal copper bridges to reduce junction-to-lead thermal resistance (RθJL = 42 °C/W). This design allows more heat to flow directly from the die through the drain terminals into the PCB copper, improving power handling by ~35% versus standard SO-8 MOSFETs.
Can IRF7331TR be used in reverse polarity protection?
No. As a dual N-channel device with source terminals not internally tied, IRF7331TR cannot implement true reverse polarity protection without external circuitry. Its body diodes conduct in the forward direction only; back-to-back connection requires external routing and is not supported by the pinout or internal structure.
IRF7331TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 7A
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1340pF @ 16V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7331TR FAQ
1.How can I place an order for IRF7331TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7331TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7331TR reliable?
The price and inventory of IRF7331TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7331TR is usually 5 days.
3.What payment methods are accepted for IRF7331TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7331TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7331TR?
IRF7331TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7331TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7331TR?
For technical support, including IRF7331TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7331TR requirements.
6.How does Aetrix verify that IRF7331TR is sourced from the original manufacturer or authorized distributors?
All IRF7331TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7331TR meets industry standards.
7.What is the process for return or replacement of IRF7331TR?
All IRF7331TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7331TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7331TR part is unused and in its original packaging.
Return procedure for IRF7331TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF7331TR Tags
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