Infineon Technologies IRF7331TRPBF-1

Overview

IRF7331TRPBF-1 from Infineon Technologies is a dual N-channel enhancement-mode HEXFET^® Power MOSFET in SO-8 package, configured as two independent 20 V, 7.0 A (T_A = 25°C) switches with R_DS(on) ≤ 30 mΩ at V_GS = 4.5 V. It integrates body diodes with V_SD ≤ 1.2 V and t_rr ≤ 47 ns, enabling synchronous rectification in DC-DC converters.

For engineers reviewing the IRF7331TRPBF-1 datasheet, IRF7331TRPBF-1 pinout, IRF7331TRPBF-1 application, or IRF7331TRPBF-1 equivalent, key selection criteria include low-voltage gate drive compatibility (2.5–4.5 V), dual-channel layout for half-bridge or load-switch pairing, thermal resistance (R_θJA = 62.5 °C/W), and industrial temperature range (−55 to +150 °C).

Technical Context

This dual MOSFET implements two electrically isolated N-channel silicon power transistors sharing a common source-connected SO-8 footprint. Each channel supports 20 V V_DS, 7.0 A continuous drain current at 25°C, and exhibits 13 nC typical total gate charge - optimized for high-frequency switching up to several hundred kHz.

Its gate threshold voltage (0.6–1.2 V) enables direct logic-level drive from 3.3 V microcontrollers, while the 31–47 ns reverse recovery time and 15–23 nC Q_rr of the integrated body diode support efficient synchronous buck operation without external Schottky diodes.

Key Specifications

Pinout & Package

SO-8 surface-mount package (JEDEC MS-012AA), 4.9 × 6.0 mm footprint, 1.75 mm height, MSL1 rated, RoHS-compliant and halogen-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with Si7852DP-T1-GE3 and DMN3022LSD-13, IRF7331TRPBF-1 uniquely offers matched dual channels with internally tied sources - simplifying half-bridge layout - while maintaining optimal balance of R_DS(on), Q_g, and body diode speed for 20 V-class synchronous converters.

Availability

IRF7331TRPBF-1 is available at Aetrix Electronics and suitable for USB-C load switching, DC-DC synchronous buck converters, motor driver half-bridges, and redundant power OR-ing requiring stable component supply and industrial temperature operation.

Supply support for IRF7331TRPBF-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial MOSFETs, with global manufacturing and qualification standards.

This part belongs to Infineon's HEXFET^® logic-level MOSFET product line, engineered for high-efficiency, space-constrained DC-DC conversion and intelligent load switching in consumer, industrial, and computing systems.

FAQ

Is IRF7331TRPBF-1 suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 0.6–1.2 V and guaranteed R_DS(on) ≤ 30 mΩ at V_GS = 4.5 V, it fully enhances using standard 3.3 V GPIO outputs. Measured transfer characteristics confirm strong conduction starting at 2.0 V V_GS, making it compatible with 3.3 V logic without level shifters.

What is the maximum safe continuous current per channel at 70°C ambient?

At T_A = 70°C, the continuous drain current is derated to 5.5 A per channel (V_GS = 4.5 V), based on SO-8 thermal limits and 1.3 W power dissipation. This assumes standard JEDEC 2S2P board layout; adding thermal vias or copper area increases usable current by up to 1.2 A.

Can Channels 1 and 2 be used in a floating high-side configuration?

No. Pins 3 (S1) and 4 (S2) are internally connected - the device has a common-source architecture. For true floating high-side use, a bootstrap gate driver and isolated source reference are required; this part is intended for low-side, half-bridge, or dual-load configurations with shared ground reference.

Does IRF7331TRPBF-1 include ESD protection on gate terminals?

Yes. The device incorporates integrated gate protection diodes rated for ±12 V V_GS, with gate leakage ≤ ±100 nA at ±12 V. It meets HBM ESD classification of Class 1C (≥1 kV), verified per JESD22-A114, and is qualified for industrial handling without additional gate resistors in most layouts.