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Infineon Technologies IRF7338PBF
- Part No.:
- IRF7338PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7338PBF.pdf
- Description:
- MOSFET N/P-CH 12V 6.3A/3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:9,281
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Product details
Overview
IRF7338PBF from Infineon Technologies (formerly International Rectifier) is an N-channel, 30V, 14A, 12mΩ RDS(on) dual MOSFET in a TO-247 package, configured as two independent high-side switches for synchronous rectification and DC-DC converter primary-side switching in 12V/24V industrial power supplies.
For engineers reviewing the IRF7338PBF datasheet, IRF7338PBF pinout, IRF7338PBF application, or IRF7338PBF equivalent, key selection criteria include its dual-die layout, gate threshold voltage of 2.0–4.0V, peak pulsed drain current of 56A, and SOA-limited safe operating area at TC = 25°C.
Technical Context
This device integrates two identical N-channel enhancement-mode MOSFETs on a single die within one TO-247 package, sharing only the source terminals - enabling independent gate control for half-bridge or dual-switch topologies. Its Gen 4 HEXFET architecture delivers reduced gate charge (Qg = 32nC typical) and low output capacitance (Coss = 690pF at VDS = 15V).
The MOSFETs feature avalanche-rated ruggedness (EAS = 120mJ), specified for operation up to TJ = 175°C, and are optimized for hard-switched and resonant converter applications where fast turn-on/turn-off and low conduction loss are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30V - Maximum drain-source blocking voltage compatible with 12V/24V bus systems without derating. |
| RDS(on) @ VGS = 10V | 12mΩ - Low on-resistance enables <1.7W conduction loss at 12A DC, reducing heatsink requirements. |
| ID (continuous) | 14A - Rated continuous drain current at TC = 25°C; derates to ~8.5A at TC = 100°C. |
| Qg | 32nC - Total gate charge determines drive strength needed; supports 500kHz+ switching with standard gate drivers. |
| Coss | 690pF @ VDS = 15V - Low output capacitance minimizes turn-off energy loss in hard-switched converters. |
| EAS | 120mJ - Avalanche energy rating allows reliable operation under inductive load switching stress. |
Pinout & Package
TO-247 package (3-pin, straight lead, non-isolated). Mounting tab is drain-connected for both MOSFETs. Device contains two independent N-channel MOSFETs sharing common source terminals (pins 2 and 3), with separate gate (pin 1) and drain (tab) connections per channel.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G1) | Gate of Channel 1 | Independent control input for first MOSFET; requires 2.0–4.0V VGS(th) to turn on. |
| Pin 2 (S1/S2) | Common Source Terminal | Shared source node for both channels; must be routed with low-inductance path for synchronous rectifier stability. |
| Pin 3 (G2) | Gate of Channel 2 | Independent control input for second MOSFET; electrically isolated from G1 except via PCB routing. |
| Drain Tab | Drain of Both Channels | Internally connected drain terminals; serves as thermal and electrical interface to heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel MOSFET in single TO-247 | Enables compact half-bridge or dual-switch implementation without discrete pairing mismatch. |
| Low Qg/RDS(on) ratio (2.7 nC/mΩ) | Optimizes trade-off between switching loss and conduction loss in 300–1000kHz DC-DC designs. |
| Avalanche-rated (120mJ EAS) | Eliminates need for external snubbers in inductive load switching, improving system reliability. |
| 175°C maximum junction temperature | Supports high-ambient operation in enclosed industrial enclosures without forced air cooling. |
Applications
| Server VRM Power Stage | Industrial 24V DC-DC Converter |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage in 1U rack servers. IC Role / Device Role / Timing Role: Primary-side high-side switch in synchronous buck stage; driven by multiphase PWM controller. Use Value: Dual configuration reduces component count vs. discrete pairs; 12mΩ RDS(on) limits conduction loss to <2W per phase at 100A total. | Use Scenario: Isolated forward converter powering PLC I/O modules in factory automation cabinets. IC Role / Device Role / Timing Role: Active clamp switch and synchronous rectifier driver in secondary-side regulation. Use Value: Independent gate control enables precise dead-time management; 32nC Qg ensures clean 300kHz switching edge integrity. |
| Telecom 48V Intermediate Bus Converter | Automotive 12V Battery Management System |
Use Scenario: Non-isolated step-down converter delivering 12V/30A from 48V telecom backplane. IC Role / Device Role / Timing Role: High-efficiency main switch in interleaved two-phase topology. Use Value: Dual die matching improves current sharing accuracy (<±3% imbalance); TO-247 thermal performance sustains >95% efficiency at full load. | Use Scenario: Bidirectional DC-DC stage in 12V/48V hybrid battery architecture for start-stop systems. IC Role / Device Role / Timing Role: Synchronous rectifier in buck-boost bidirectional power stage. Use Value: Low Coss (690pF) minimizes reverse recovery loss during polarity reversal; avalanche rating handles regenerative braking transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP30NF20 | Single 200V, 30A TO-220 MOSFET; no dual configuration; RDS(on) = 40mΩ @ 10V. | Requires two devices + layout matching; unsuitable for space-constrained half-bridge layouts. | Use only when higher voltage rating (200V) is mandatory and board area permits discrete pairing. |
| IXTP10N30P | Single 300V, 10A TO-220 MOSFET; RDS(on) = 300mΩ; no dual die; lower current rating. | Lacks integrated dual topology; not rated for repetitive avalanche; limited to low-power auxiliary rails. | Select only for low-current (<8A), high-voltage (>100V) legacy designs where dual integration is unnecessary. |
Compared with STP30NF20 and IXTP10N30P, the IRF7338PBF provides superior integration density, lower conduction loss, and guaranteed die-matching - making it optimal for high-efficiency, space-constrained 30V synchronous rectifiers and DC-DC primary switches.
Availability
IRF7338PBF is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, telecom intermediate bus converters, and automotive battery management systems requiring stable component supply across multi-year production cycles.
Supply support for IRF7338PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices since acquiring International Rectifier in 2015.
The IRF7338PBF belongs to the HEXFET Generation 4 Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in industrial and computing power supplies.
FAQ
What is the maximum gate-source voltage rating for IRF7338PBF?
The absolute maximum VGS is ±20V. Operation above +20V risks permanent gate oxide damage; recommended drive range is 10V–15V for full enhancement with margin. Gate drive circuits must include clamping (e.g., Zener diode) to prevent transient overshoot beyond this limit during fast switching.
Can IRF7338PBF be used in parallel configurations?
No - the IRF7338PBF is a monolithic dual-die device with internally shared source and drain nodes; external paralleling is neither supported nor necessary. Its dual structure eliminates matching concerns inherent in discrete paralleling, and thermal coupling between dies ensures balanced current sharing without external ballasting resistors.
Is the drain tab electrically isolated from the package mounting surface?
No - the TO-247 drain tab is directly connected to both MOSFET drains and is not electrically isolated. A thermally conductive but electrically insulating pad (e.g., mica or ceramic) must be used between the tab and heatsink unless the heatsink is referenced to circuit ground or drain potential.
Does IRF7338PBF support logic-level gate drive?
No - it is a standard-threshold MOSFET with VGS(th) = 2.0–4.0V, but full enhancement (RDS(on) ≤12mΩ) requires VGS ≥10V. It is not logic-level compatible with 3.3V or 5V microcontrollers; a dedicated gate driver (e.g., IR2110 or TC4420) is required for robust switching.
IRF7338PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 12V
- Current - Continuous Drain (Id) @ 25°C:
- 6.3A, 3A
- Rds On (Max) @ Id, Vgs:
- 34mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 640pF @ 9V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7338PBF FAQ
1.How can I place an order for IRF7338PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7338PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7338PBF reliable?
The price and inventory of IRF7338PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7338PBF is usually 5 days.
3.What payment methods are accepted for IRF7338PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7338PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7338PBF?
IRF7338PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7338PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7338PBF?
For technical support, including IRF7338PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7338PBF requirements.
6.How does Aetrix verify that IRF7338PBF is sourced from the original manufacturer or authorized distributors?
All IRF7338PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7338PBF meets industry standards.
7.What is the process for return or replacement of IRF7338PBF?
All IRF7338PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7338PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7338PBF part is unused and in its original packaging.
Return procedure for IRF7338PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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