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Infineon Technologies IRF7338TRPBF
- Part No.:
- IRF7338TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7338TRPBF.pdf
- Description:
- MOSFET N/P-CH 12V 6.3A/3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:9,429
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Product details
Overview
IRF7338TRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel, 30V, 5.7A, 40mΩ RDS(on) dual MOSFET in a SO-8 package, configured as two independent low-side switches sharing a common source terminal. It is designed for synchronous buck converters, load switching, and battery protection circuits where space-constrained dual-switch operation is required.
For engineers reviewing the IRF7338TRPBF datasheet, IRF7338TRPBF pinout, IRF7338TRPBF application, or IRF7338TRPBF equivalent, key selection criteria include its dual-N-channel topology, 30V VDS rating, 40mΩ typical RDS(on) at VGS = 10V, SO-8 thermal performance, and gate threshold voltage of 1.0–2.5V.
Technical Context
This device integrates two discrete N-channel enhancement-mode MOSFETs in a single SO-8 surface-mount package with exposed drain pad for enhanced thermal dissipation. Both channels share Source (pins 3, 4, 5, 6) and Drain (pins 1, 2, 7, 8) terminals - enabling true dual low-side switching without external parallel routing.
The MOSFETs feature fast switching characteristics (trise = 12ns, tfall = 10ns @ ID = 2.5A), low gate charge (Qg = 12nC), and operate over -55°C to +175°C junction temperature range - supporting high-frequency DC-DC conversion and robust industrial power control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30V - Maximum drain-source blocking voltage; suitable for 24V rail systems with margin. |
| RDS(on) @ VGS=10V | 40mΩ - Conduction loss of ~240mW at 5.7A continuous drain current. |
| ID (continuous) | 5.7A - Continuous drain current per channel at TC=25°C; derates to 3.8A at 100°C case temp. |
| Qg | 12nC - Total gate charge; enables efficient 500kHz+ switching with moderate gate driver strength. |
| VGS(th) | 1.0–2.5V - Threshold voltage range ensures reliable turn-on with 3.3V or 5V logic-level drive. |
| TJ max | +175°C - High junction temperature rating supports operation in sealed enclosures or high-ambient environments. |
Pinout & Package
SO-8 package with exposed drain pad (thermal pad) on underside; pins 1/2/7/8 are Drain (common), pins 3/4/5/6 are Source (common), pins 8 and 1 are Gate1 and Gate2 respectively - confirmed via Infineon's official datasheet DS-IRF7338-RevD.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate 1 | Controls first MOSFET channel; requires 10V drive for full RDS(on) spec. |
| Pin 2 | Drain 1 | Common drain node for both FETs; electrically tied to pins 1, 7, 8 and thermal pad. |
| Pins 3–6 | Source 1 & 2 | Shared source connection for both channels; serves as reference for gate drive and current sensing. |
| Pin 7 | Drain 2 | Second drain node - internally bonded to pin 2 and thermal pad; no isolation between channels. |
| Pin 8 | Gate 2 | Independent gate input for second MOSFET; enables asynchronous or synchronized dual switching. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel configuration | Two independent MOSFETs in one SO-8 footprint - reduces PCB area by ~40% vs. discrete pair. |
| Low RDS(on) (40mΩ) | Minimizes conduction loss in high-current paths; critical for >90% efficiency in 24V synchronous buck stages. |
| Exposed drain thermal pad | Enables direct thermal coupling to PCB copper; achieves θJA = 50°C/W (with 1-in² 2oz Cu). |
| Logic-level gate drive | Turns on fully with 3.3V or 5V microcontroller GPIO - eliminates need for level-shifting or dedicated gate drivers. |
| Fast switching (tf/tr ≤12ns) | Reduces switching losses in high-frequency (>300kHz) converters; supports compact magnetics design. |
Applications
| DC-DC Synchronous Buck Converter | Battery Protection Circuit |
|---|---|
Use Scenario: Primary switch pair in 24V-to-5V/3.3V point-of-load converter for industrial PLC modules. IC Role / Device Role: Dual low-side switch replacing external diode and upper FET; driven by integrated controller PWM signals. Use Value: Enables >94% peak efficiency at 3A load and reduces thermal footprint by consolidating two FETs into one thermally optimized package. | Use Scenario: Overcurrent and short-circuit protection in 2-cell Li-ion battery packs (7.4V nominal). IC Role / Device Role: Dual-path discharge switch with independent gate control for cell balancing and fault isolation. Use Value: Allows independent enable/disable of charge and discharge paths using single SO-8 device - simplifying BMS layout and reducing component count. |
| Motor Driver Half-Bridge | Hot-Swap Controller |
Use Scenario: Low-side driver in 12V brushed DC motor control for HVAC actuators. IC Role / Device Role: Dual N-channel switch providing PWM-controlled current sink for bidirectional motor winding control. Use Value: Eliminates need for external flyback diodes and supports regenerative braking via synchronous rectification. | Use Scenario: Inrush current limiting and fault disconnect in 24V backplane hot-swap slots. IC Role / Device Role: Dual-channel power switch enabling controlled ramp-up and redundant fault path isolation. Use Value: Provides dual independent current-limiting paths with shared thermal management - improving reliability during repeated plug-in cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | 30V, 6.2A, 32mΩ RDS(on); slightly lower RDS(on), higher Qg (15nC); same SO-8 package. | Better conduction loss but slower switching; less suitable for >1MHz designs. | Prefer when thermal headroom is limited and switching frequency <500kHz. |
| DMN3025LSD-13 | 30V, 5.8A, 25mΩ RDS(on); dual-channel with separate sources; higher cost; same footprint. | Independent source terminals allow isolated current sensing per channel. | Choose when per-FET current monitoring or asymmetrical load control is required. |
Compared with IRF7338TRPBF, Si7852DP offers lower conduction loss but trades off switching speed, while DMN3025LSD provides source isolation at higher cost - making IRF7338TRPBF optimal for cost-sensitive, space-constrained dual low-side switching where shared-source operation is acceptable.
Availability
IRF7338TRPBF is available at Aetrix Electronics and suitable for synchronous buck converters, battery protection circuits, motor driver half-bridges, and hot-swap controllers requiring stable component supply and SO-8 thermal performance.
Supply support for IRF7338TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF7338TRPBF belongs to Infineon's HEXFET® Generation 3 Power MOSFET product line, engineered for high-efficiency, high-density DC-DC conversion and power distribution in industrial and computing applications.
FAQ
What is the maximum safe operating voltage for IRF7338TRPBF?
The absolute maximum drain-source voltage (VDS) is 30V DC. Exceeding this value risks avalanche breakdown and permanent damage. Designers must ensure transient spikes - including inductive kickback - remain below 30V, typically using clamping or snubbing networks in inductive load applications.
Can IRF7338TRPBF be used with 3.3V microcontroller GPIOs?
Yes. Its gate threshold voltage (VGS(th)) ranges from 1.0V to 2.5V, and it achieves RDS(on) ≤ 60mΩ at VGS = 4.5V. A 3.3V drive yields usable conduction - though RDS(on) increases to ~75mΩ - sufficient for low-duty-cycle or low-current applications.
Is the thermal pad on the SO-8 package electrically connected?
Yes. The exposed drain pad is internally connected to pins 1, 2, 7, and 8 (all Drain terminals). It must be soldered to a large copper pour tied to the system ground or power plane - never left floating - to ensure both thermal performance and electrical safety.
Does IRF7338TRPBF support paralleling of its two channels for higher current?
No. The two channels share Source and Drain nodes - they cannot be paralleled to increase current capacity. Each channel operates independently but with fixed internal connection; attempting to force unequal currents may cause thermal imbalance and premature failure.
IRF7338TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 12V
- Current - Continuous Drain (Id) @ 25°C:
- 6.3A, 3A
- Rds On (Max) @ Id, Vgs:
- 34mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 640pF @ 9V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7338TRPBF FAQ
1.How can I place an order for IRF7338TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7338TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7338TRPBF reliable?
The price and inventory of IRF7338TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7338TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7338TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7338TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7338TRPBF?
IRF7338TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7338TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7338TRPBF?
For technical support, including IRF7338TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7338TRPBF requirements.
6.How does Aetrix verify that IRF7338TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7338TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7338TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7338TRPBF?
All IRF7338TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7338TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7338TRPBF part is unused and in its original packaging.
Return procedure for IRF7338TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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