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Infineon Technologies IRF7341GTRPBF
- Part No.:
- IRF7341GTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7341GTRPBF.pdf
- Description:
- MOSFET 2N-CH 55V 5.1A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:9,716
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Product details
Overview
IRF7341GTRPBF from Infineon Technologies is a dual N-channel enhancement-mode HEXFET® Power MOSFET in SO-8 surface-mount package, rated for 55 V VDS, 0.050 Ω RDS(on) at VGS = 10 V, and 5.1 A continuous drain current at 25°C. It features 175°C maximum junction temperature, repetitive avalanche capability, and ultra-low on-resistance per silicon area-enabling high-efficiency synchronous rectification and load switching in DC-DC converters and motor drivers.
For engineers reviewing the IRF7341GTRPBF datasheet, IRF7341GTRPBF pinout, IRF7341GTRPBF application, or IRF7341GTRPBF equivalent, key selection criteria include its dual-die SO-8 layout, gate charge (29–44 nC), body diode reverse recovery (51–77 ns), thermal resistance (62.5°C/W), and lead-free compliance for industrial power management designs.
Technical Context
This dual MOSFET integrates two matched N-channel devices sharing a common source configuration (S1/G1/D1 and S2/G2/D2), enabling half-bridge or complementary switching topologies without external interconnects. Its advanced trench process delivers low RDS(on) with tight parametric matching between channels and robust 140 mJ single-pulse avalanche energy rating.
The device supports fast switching (tr = 7.7 ns, tf = 12.5 ns) under 10 V gate drive and maintains stable on-resistance up to 175°C junction temperature. Its SO-8 footprint allows board-space reduction versus discrete dual-MOSFET solutions while retaining FR-4-compatible thermal performance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum drain-source blocking voltage for 24 V/48 V bus applications |
| RDS(on) @ VGS = 10 V | 0.050 Ω - Enables ≤0.26 W conduction loss at 5.1 A, critical for thermally constrained PCBs |
| RDS(on) @ VGS = 4.5 V | 0.065 Ω - Supports logic-level gate drive from 3.3 V/5 V microcontrollers |
| ID (continuous, 25°C) | 5.1 A - Sustains full-load current in compact DC-DC modules without forced air |
| TJ(max) | 175°C - Extends safe operating area in high-ambient environments (e.g., automotive under-hood) |
| EAS | 140 mJ - Allows reliable operation during inductive turn-off transients without snubbers |
| Qg | 29–44 nC - Determines gate driver sizing and switching loss in 100–500 kHz SMPS designs |
Pinout & Package
Package: SO-8 (JEDEC MS-012AA), surface-mount, lead-free, dual-die configuration with isolated gate terminals and shared source connections per channel.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain of Channel 1 | High-side switch node for half-bridge or load-switch output path |
| 2 (G1) | Gate of Channel 1 | Control input requiring 10 V drive for full RDS(on) specification |
| 3 (S2) | Source of Channel 2 | Common source node for Channel 2; electrically tied to Pin 5 (S1) internally |
| 4 (D2) | Drain of Channel 2 | Low-side switch node; complements Channel 1 in synchronous buck topology |
| 5 (S1) | Source of Channel 1 | Common source node for Channel 1; bonded to Pin 3 (S2) in package |
| 6 (G2) | Gate of Channel 2 | Independent control input enabling phase-shifted or complementary PWM |
| 7 (S2) | Source of Channel 2 | Redundant source pad for enhanced thermal and current-carrying capacity |
| 8 (D1) | Drain of Channel 1 | Redundant drain pad improving thermal dissipation and reducing parasitic inductance |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel die in single SO-8 | Eliminates interconnect inductance and layout mismatch between high/low-side switches |
| 175°C junction rating | Supports operation in sealed enclosures or high-ambient industrial environments without derating |
| Repetitive avalanche rated | Enables robustness against inductive kickback in relay/motor drive without external clamping |
| Ultra-low RDS(on) at 4.5 V | Permits direct interface with 3.3 V logic controllers, reducing BOM count vs level-shifter solutions |
| Lead-free and RoHS-compliant | Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) for standard reflow processes |
Applications
| DC-DC Synchronous Buck Converter | BLDC Motor Phase Driver |
|---|---|
Use Scenario: High-efficiency 12 V → 3.3 V point-of-load converter in network infrastructure equipment. IC Role / Device Role: Dual-channel power switch implementing high-side and low-side FETs in single-phase buck regulator. Use Value: 0.050 Ω RDS(on) reduces conduction loss by >35% vs comparable discrete MOSFET pairs, improving thermal margin at 5 A load. | Use Scenario: 24 V three-phase BLDC driver for HVAC fan module with space-constrained PCB. IC Role / Device Role: Half-bridge leg per phase (using one IRF7341GTRPBF per leg) with integrated source tie. Use Value: Matched RDS(on) and gate charge between channels ensures balanced shoot-through immunity and reduced EMI during commutation. |
| Hot-Swap Load Switch | Industrial Solenoid Driver |
Use Scenario: Inrush-limited 48 V power distribution for modular PLC I/O cards. IC Role / Device Role: Dual N-MOSFET configured as back-to-back switch for bidirectional current blocking and soft-start control. Use Value: 175°C TJ(max) enables sustained 4.2 A current at 70°C ambient without thermal shutdown, supporting Class I overcurrent protection. | Use Scenario: 24 V solenoid actuator control in factory automation safety interlocks. IC Role / Device Role: Low-side switch with integrated body diode handling inductive flyback energy. Use Value: 140 mJ EAS rating absorbs repetitive solenoid turn-off spikes without external TVS, simplifying layout and reducing component count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7850DP-T1-GE3 | 60 V VDS, 0.045 Ω RDS(on) @ 10 V, but only 3.8 A ID at 25°C and no specified repetitive avalanche rating | Better voltage margin but lower current capability; unsuitable for 5 A continuous loads | Select when higher VDS margin is prioritized over current rating and avalanche robustness |
| DMN3028LSD-13 | 30 V VDS, 0.028 Ω RDS(on) @ 10 V, 6.5 A ID, but max TJ = 150°C and no avalanche energy spec | Optimized for low-voltage, high-current apps (e.g., USB PD); not viable for 48 V systems | Choose for 5–12 V rail applications where thermal headroom exceeds 175°C requirement |
Compared with Si7850DP-T1-GE3 and DMN3028LSD-13, IRF7341GTRPBF uniquely balances 55 V rating, 5.1 A current, 175°C operation, and documented repetitive avalanche capability-making it the only option among the three qualified for industrial 24–48 V motor and power conversion designs requiring long-term reliability under transient stress.
Availability
IRF7341GTRPBF is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, hot-swap controllers, and industrial solenoid drivers requiring stable component supply across multi-year production cycles.
Supply support for IRF7341GTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power switching in industrial, computing, and automotive subsystems where thermal resilience and avalanche ruggedness are design-critical.
FAQ
What is the maximum continuous drain current for IRF7341GTRPBF at 70°C ambient?
The maximum continuous drain current is 4.2 A at TA = 70°C with VGS = 10 V, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating due to reduced heat dissipation at elevated ambient temperatures and assumes standard FR-4 PCB mounting with defined copper area.
Does IRF7341GTRPBF support logic-level gate drive?
Yes-its RDS(on) is characterized at VGS = 4.5 V (0.065 Ω), confirming compatibility with 3.3 V and 5 V logic outputs. Gate threshold voltage (VGS(th)) ranges from 1.0 V to 2.0 V, ensuring reliable turn-on with standard microcontroller GPIOs without external level shifting.
How is the SO-8 pinout configured for dual-channel operation?
Pins 1 and 8 are D1 (Channel 1 drain), Pins 2 and 6 are G1 and G2 (independent gates), and Pins 3 and 5 are S2 and S1 (common source nodes tied internally). This layout enables independent gate control while minimizing source loop inductance-critical for high-frequency switching stability.
Is IRF7341GTRPBF suitable for avalanche-prone circuits like relay drivers?
Yes-it is explicitly rated for repetitive avalanche up to TJ(max) = 175°C, with 140 mJ single-pulse energy and documented curves for avalanche current vs. pulse width. This makes it appropriate for inductive load switching where flyback energy must be absorbed internally without external clamping components.
IRF7341GTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 55V
- Current - Continuous Drain (Id) @ 25°C:
- 5.1A
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 5.1A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 780pF @ 25V
- Power - Max:
- 2.4W
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7341GTRPBF FAQ
1.How can I place an order for IRF7341GTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7341GTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7341GTRPBF reliable?
The price and inventory of IRF7341GTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7341GTRPBF is usually 5 days.
3.What payment methods are accepted for IRF7341GTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7341GTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7341GTRPBF?
IRF7341GTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7341GTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7341GTRPBF?
For technical support, including IRF7341GTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7341GTRPBF requirements.
6.How does Aetrix verify that IRF7341GTRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7341GTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7341GTRPBF meets industry standards.
7.What is the process for return or replacement of IRF7341GTRPBF?
All IRF7341GTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7341GTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7341GTRPBF part is unused and in its original packaging.
Return procedure for IRF7341GTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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