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Infineon Technologies IRF7341PBF
- Part No.:
- IRF7341PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7341PBF.pdf
- Description:
- MOSFET 2N-CH 55V 4.7A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,373
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Product details
Overview
IRF7341PBF from Infineon Technologies is a dual N-channel enhancement-mode Power MOSFET in SO-8 package, optimized for high-efficiency DC-DC conversion and load switching. It features 55 V VDSS, 0.043 Ω RDS(on) @ VGS = 10 V, 4.7 A continuous drain current at TC = 25°C, and fast switching with 8.3 ns turn-on delay and 13 ns fall time - deployed in synchronous buck converters and motor drive half-bridges.
For engineers reviewing the IRF7341PBF datasheet, IRF7341PBF pinout, IRF7341PBF application, or IRF7341PBF equivalent, key selection criteria include verified RDS(on) vs. temperature behavior, gate charge (Qg = 24–36 nC), body diode recovery (trr = 60–90 ns), thermal resistance (RθJA = 62.5°C/W), and SO-8 leadframe-enhanced thermal performance for PCB-mounted power stages.
Technical Context
This dual MOSFET integrates two matched N-channel silicon die in a single SO-8 package with shared source terminals (S1/S2) and independent gates (G1/G2) and drains (D1/D2), enabling complementary half-bridge or dual low-side switching without external paralleling. Its 5.0 V/ns dv/dt rating and 72 mJ single-pulse avalanche energy support robust operation under inductive switching stress.
The device uses Infineon's Generation V HEXFET process, delivering ultra-low on-resistance per unit area and stable threshold voltage (VGS(th) = 1.0–2.0 V) across -55°C to +150°C junction temperature range - critical for automotive and industrial power supplies where thermal derating and gate drive margin must be precisely modeled.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - maximum blocking voltage before avalanche; sets upper limit for input rail in 48 V systems and synchronous rectifiers |
| RDS(on) @ VGS = 10 V | 0.043 Ω (typ), 0.050 Ω (max) - determines conduction loss in 4.7 A continuous load; impacts thermal design at >1 W dissipation |
| Qg | 24–36 nC - defines gate drive power requirement and switching speed trade-off in PWM frequencies up to 1 MHz |
| trr / Qrr | 60–90 ns / 120–170 nC - quantifies body diode reverse recovery burden in hard-switched topologies; affects EMI and cross-conduction risk |
| RθJA | 62.5°C/W - thermal resistance from junction to ambient on standard 1-inch² copper pad; enables ~1.3 W max continuous power at 70°C case temp |
| ID @ TC = 70°C | 3.8 A - derated continuous current reflecting real-world board-level thermal limits, not ideal heatsink conditions |
| EAS | 72 mJ - single-pulse avalanche energy rating; validates safe operation during inductive turn-off transients without snubbers |
Pinout & Package
SO-8 package (JEDEC MS-012AA compliant) with enhanced thermal leadframe and vapor-phase/wave-solder compatible construction. Dimensions: 4.9 × 6.0 × 1.75 mm (L × W × H); 1.27 mm pitch; 8-pin surface-mount outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first MOSFET; requires dedicated gate resistor and driver path to avoid shoot-through |
| 2 (D1) | Drain of Channel 1 | High-side or low-side power node connection; electrically isolated from D2 but shares thermal mass in package |
| 3 (S2) | Source of Channel 2 | Common source terminal for both channels; forms internal Kelvin sense path for accurate current monitoring in some layouts |
| 4 (S1) | Source of Channel 1 | Shared with S2 - confirms dual low-side configuration; ties to ground or common return plane |
| 5 (G2) | Gate of Channel 2 | Second independent gate; timing skew between G1/G2 must be minimized in synchronous applications |
| 6 (D2) | Drain of Channel 2 | Second power switch node; enables dual output or phase interleaving without discrete paralleling |
| 7, 8 (Exposed Pad) | Thermal Pad / Drain Tie | Internally connected to D1/D2; must be soldered to large copper pour for effective heat extraction and RθJA reduction |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Two matched silicon dies in one SO-8 footprint - eliminates layout mismatch and reduces PCB area by >40% vs. discrete pairs |
| Enhanced SO-8 thermal leadframe | Customized copper leadframe lowers thermal resistance and supports >0.8 W dissipation on standard FR4 - no heatsink required for <3 A loads |
| Fast body diode recovery | trr = 60–90 ns with soft recovery waveform - reduces voltage overshoot and EMI in buck converter freewheeling phase |
| Generation V HEXFET process | 0.043 Ω RDS(on) @ 10 V with <2.0 V VGS(th) - ensures full enhancement at 4.5 V logic-level drive and stable operation over temperature |
| Lead-free and RoHS-compliant | Pb-free plating and halogen-free molding compound - meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) for unlimited floor life |
Applications
| DC-DC Synchronous Buck Converter | Brushed DC Motor Half-Bridge |
|---|---|
Use Scenario: 12 V input to 3.3 V/5 V point-of-load regulation in networking equipment and embedded controllers. IC Role / Device Role: Dual low-side switch replacing external Schottky diode and single MOSFET; D1/G1/S1 and D2/G2/S2 operate in complementary PWM mode. Use Value: Eliminates diode conduction loss (≈0.4 W saved), reduces thermal footprint, and enables >92% efficiency at 2 A load with 500 kHz switching. | Use Scenario: Bidirectional 24 V brushed motor control in industrial actuators and robotic joints. IC Role / Device Role: Low-side driver pair controlling motor direction via H-bridge topology with external high-side switches or bootstrap drivers. Use Value: Matched RDS(on) ensures balanced current sharing; fast trr prevents shoot-through during direction reversal at 10 kHz PWM. |
| LED Driver Current Sink | Hot-Swap Load Switch |
Use Scenario: Constant-current LED string driver in architectural lighting with analog dimming and thermal foldback. IC Role / Device Role: Dual parallel channel used as precision current sink with external sense resistor; G1/G2 driven in parallel for 9.4 A combined capability. Use Value: 0.043 Ω RDS(on) yields <0.2 V dropout at 4.7 A per channel - minimizes power loss and enables compact thermal design. | Use Scenario: Inrush-limited 5 V/12 V supply enable for FPGA or ASIC power rails in telecom line cards. IC Role / Device Role: Single channel configured as low-side load switch with gate-controlled slew rate; second channel unused or paralleled for higher current. Use Value: Gate threshold (1.0–2.0 V) allows direct microcontroller GPIO drive; integrated body diode blocks backfeed during hot-plug events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 0.035 Ω @ 10 V, Qg = 29 nC, SO-8, same pinout | Lower RDS(on) improves conduction loss but increases gate drive demand; slightly lower VDSS (40 V) | Select when operating below 40 V and prioritizing efficiency over gate drive simplicity |
| DMN6016LSD-13 | RDS(on) = 0.048 Ω @ 10 V, Qg = 18 nC, SO-8, same pinout | Lower Qg enables faster switching and reduced driver loss; higher RDS(on) increases conduction loss | Select when optimizing for high-frequency (>1 MHz) operation and minimal gate drive power |
Compared with Si7852DP and DMN6016LSD, IRF7341PBF offers balanced RDS(on)/Qg trade-off and proven avalanche ruggedness (72 mJ), making it preferred for 48 V input converters and motor drives where transient robustness outweighs marginal efficiency gains.
Availability
IRF7341PBF is available at Aetrix Electronics and suitable for DC-DC power supplies, brushed motor drives, LED current sinks, and hot-swap load switches requiring stable component supply and long-term industrial availability.
Supply support for IRF7341PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The IRF7341PBF belongs to Infineon's HEXFET Power MOSFET product line, engineered for high-efficiency, thermally constrained power conversion in consumer, industrial, and computing applications - emphasizing low RDS(on), fast switching, and rugged reliability.
FAQ
What is the maximum continuous drain current for IRF7341PBF at 70°C case temperature?
The maximum continuous drain current is 3.8 A at TC = 70°C with VGS = 10 V, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating on a standard PCB mount with 1 inch² copper; actual current capability depends on board layout, airflow, and copper area.
Can IRF7341PBF be used in a synchronous rectifier configuration?
Yes - its low RDS(on) (0.043 Ω typ), fast body diode (trr = 60–90 ns), and matched dual structure make it suitable for synchronous rectification in flyback and forward converters up to 100 kHz. Gate timing must ensure dead-time control to prevent shoot-through.
Is the exposed pad on the SO-8 package electrically connected?
Yes - the exposed thermal pad (pins 7 and 8) is internally connected to both drain terminals (D1 and D2). It must be soldered to a large PCB copper pour for thermal performance and electrical grounding; floating the pad degrades RθJA by >30% and risks thermal runaway.
Does IRF7341PBF support 3.3 V logic-level gate drive?
No - its gate threshold voltage (VGS(th)) ranges from 1.0 V to 2.0 V, but full enhancement requires ≥4.5 V for RDS(on) ≤ 0.056 Ω. At 3.3 V, RDS(on) rises significantly (>0.1 Ω), increasing conduction loss; a level-shifting gate driver is recommended for 3.3 V MCU interfaces.
IRF7341PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 55V
- Current - Continuous Drain (Id) @ 25°C:
- 4.7A
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 4.7A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 740pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7341PBF FAQ
1.How can I place an order for IRF7341PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7341PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7341PBF reliable?
The price and inventory of IRF7341PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7341PBF is usually 5 days.
3.What payment methods are accepted for IRF7341PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7341PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7341PBF?
IRF7341PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7341PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7341PBF?
For technical support, including IRF7341PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7341PBF requirements.
6.How does Aetrix verify that IRF7341PBF is sourced from the original manufacturer or authorized distributors?
All IRF7341PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7341PBF meets industry standards.
7.What is the process for return or replacement of IRF7341PBF?
All IRF7341PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7341PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7341PBF part is unused and in its original packaging.
Return procedure for IRF7341PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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