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Infineon Technologies IRF7341QTRPBF
- Part No.:
- IRF7341QTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7341QTRPBF.pdf
- Description:
- MOSFET 2N-CH 55V 5.1A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,886
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Product details
Overview
IRF7341QTRPBF from Infineon Technologies (formerly International Rectifier) is a dual N-channel enhancement-mode HEXFET® Power MOSFET in a surface-mount SO-8 package, rated for 55 V VDS, 5.1 A continuous drain current at 25°C, and ultra-low RDS(on) of 0.050 Ω at VGS = 10 V. It features 175°C junction temperature rating, fast switching (tr = 7.7 ns), and repetitive avalanche capability - enabling high-efficiency synchronous rectification and load switching in DC-DC converters.
For engineers reviewing the IRF7341QTRPBF datasheet, IRF7341QTRPBF pinout, IRF7341QTRPBF application, or IRF7341QTRPBF equivalent, key selection criteria include its dual-die SO-8 footprint, gate charge (Qg = 29–44 nC), body diode reverse recovery (trr = 51–77 ns), thermal resistance (RθJA = 62.5 °C/W), and avalanche energy rating (EAS = 140 mJ).
Technical Context
This device integrates two independent N-channel MOSFETs sharing a common source configuration in a single SO-8 package, with separate gate and drain terminals per channel (G1/D1/S2 and G2/D2/S1). Its advanced trench process delivers low conduction loss and high dV/dt immunity, supporting hard-switched topologies up to 500 kHz.
The MOSFETs are characterized for operation across –55°C to +175°C, with guaranteed RDS(on) stability over temperature (0.043–0.050 Ω at 150°C), and robust avalanche performance validated per JEDEC JESD24-11. Gate threshold voltage (VGS(th)) is specified between 1.0 V and 2.0 V, ensuring compatibility with 3.3 V and 5 V logic-level drive.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - supports input rails up to 48 V systems with margin against transients |
| RDS(on) max | 0.050 Ω @ VGS = 10 V - enables <125 mW conduction loss at 5 A, critical for thermally constrained PCBs |
| ID continuous | 5.1 A @ TA = 25°C - sufficient for medium-power buck converter high-side/low-side stages |
| Qg | 29–44 nC - determines gate driver power requirement and switching loss trade-off |
| tr/tf | 7.7 ns / 12.5 ns - enables high-frequency operation while limiting EMI generation |
| EAS | 140 mJ - allows safe clamping of inductive turn-off spikes without external snubbers |
| TJ max | 175°C - extends safe operating area under sustained overload or ambient >85°C conditions |
Pinout & Package
IRF7341QTRPBF uses a standard JEDEC MS-012AA-compliant SO-8 package (5.0 mm × 6.2 mm × 1.75 mm), optimized for surface-mount assembly and thermal dissipation on FR-4 boards. The dual-die layout places both MOSFETs in a shared-source configuration, minimizing loop inductance in half-bridge layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first MOSFET; requires dedicated gate resistor for timing control |
| 2 (S2) | Source of Channel 2 / Common Source Node | Shared source connection point; serves as return path for both channels and reference for low-side sensing |
| 3 (D2) | Drain of Channel 2 | High-current output node for second MOSFET; routed to load or inductor in synchronous rectifier stage |
| 4 (G2) | Gate of Channel 2 | Independent control input for second MOSFET; isolated from G1 to prevent cross-talk in phase-shifted drives |
| 5 (S1) | Source of Channel 1 / Common Source Node | Electrically tied to Pin 2; forms low-impedance source node for dual-channel operation |
| 6 (D1) | Drain of Channel 1 | High-current output node for first MOSFET; used for high-side switching or parallel current sharing |
| 7 (S2) | Source of Channel 2 (redundant label) | Same node as Pin 2; confirms common-source topology for layout verification |
| 8 (D2) | Drain of Channel 2 (redundant label) | Same node as Pin 3; reinforces dual-drain, shared-source physical construction |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel MOSFET in SO-8 | Reduces board area by ~40% vs. discrete SO-8 pairs; eliminates interconnect inductance in half-bridge legs |
| Ultra-low RDS(on) | 0.050 Ω @ 10 V ensures <130 mW conduction loss at 5.1 A, lowering thermal design burden |
| 175°C junction rating | Enables operation in sealed enclosures or high-ambient environments without derating beyond 70°C ambient |
| Repetitive avalanche rated | Validated for repeated inductive switching events up to TJmax, eliminating need for external clamping in many flyback designs |
| Lead-free and RoHS compliant | Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1); suitable for lead-free reflow without preconditioning |
Applications
| DC-DC Synchronous Buck Converter | Motor Drive Half-Bridge |
|---|---|
Use Scenario: High-efficiency 12 V to 3.3 V conversion in industrial PLC I/O modules. IC Role / Device Role / Timing Role: Dual-channel power switch implementing high-side and low-side switching in a single-phase buck regulator. Use Value: Shared-source topology minimizes dead-time-induced shoot-through risk while maintaining <150 mΩ total channel resistance. | Use Scenario: 24 V brushed DC motor control in automated valve actuators. IC Role / Device Role / Timing Role: Half-bridge output stage driving bidirectional motor current with integrated body diodes for freewheeling. Use Value: 175°C rating sustains 100% duty cycle during stall conditions without thermal shutdown. |
| USB-C PD Power Path Switch | Hot-Swap Controller Load Switch |
Use Scenario: Input power path management in portable medical monitors with dual USB-C inputs. IC Role / Device Role / Timing Role: Back-to-back configured MOSFET pair controlling bidirectional 20 V power routing with reverse polarity protection. Use Value: Low Qgd/Qgs ratio (7.3/2.9 nC) ensures clean turn-on/turn-off transitions under dynamic load steps. | Use Scenario: Inrush-limited 5 V rail enable in network switch line cards. IC Role / Device Role / Timing Role: Single-channel load switch with controlled slew rate via gate resistor, leveraging low RDS(on) for minimal voltage drop. Use Value: 0.065 Ω @ 4.5 V enables direct 3.3 V GPIO drive without level-shifting, reducing BOM count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7850DP-T1-GE3 | RDS(on) = 0.038 Ω @ 10 V; higher Qg (52 nC); same SO-8 package | Better conduction loss but slower switching; less suitable for >300 kHz designs | Select when thermal budget dominates over switching loss and frequency is ≤250 kHz |
| DMN3028LSD-13 | RDS(on) = 0.028 Ω @ 10 V; lower VDS (30 V); different pinout (G-S-D-G-S-D) | Not pin-compatible; requires PCB redesign; unsuitable for 48 V input systems | Choose only if system voltage ≤24 V and board revision permits layout change |
Compared with Si7850DP-T1-GE3 and DMN3028LSD-13, IRF7341QTRPBF offers balanced trade-offs: moderate RDS(on), proven avalanche ruggedness, and industry-standard pinout - making it optimal for cost-sensitive, thermally demanding 48 V-class power stages where reliability trumps peak efficiency.
Availability
IRF7341QTRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, USB-C power delivery systems, and hot-swap controllers requiring stable component supply and long-term manufacturability.
Supply support for IRF7341QTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon-based power devices and wide-bandgap solutions.
The IRF7341QTRPBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-reliability industrial and telecom power conversion where thermal robustness and avalanche tolerance are mandatory.
FAQ
What is the maximum continuous drain current for IRF7341QTRPBF at 70°C ambient?
The maximum continuous drain current is 4.2 A at TA = 70°C with VGS = 10 V, derated from 5.1 A at 25°C using the linear derating factor of 16 mW/°C. This reflects thermal limits of the SO-8 package on standard FR-4 PCBs without heatsinking.
Does IRF7341QTRPBF support logic-level gate drive?
Yes - with VGS(th) specified from 1.0 V to 2.0 V and RDS(on) = 0.065 Ω at VGS = 4.5 V, it is fully compatible with 3.3 V and 5 V microcontroller outputs without gate boosting, though gate resistor selection must account for Qg = 29–44 nC.
Can IRF7341QTRPBF be used in back-to-back configuration for AC switching?
No - the internal body diodes are unidirectional and not symmetrical; back-to-back use would allow unintended conduction in one direction. For AC solid-state switching, discrete anti-series MOSFETs or purpose-built AC switches are required.
What is the safe operating area (SOA) limitation at DC operation?
At DC, the SOA is limited by RDS(on) and package thermal resistance. With RDS(on) = 0.050 Ω and RθJA = 62.5 °C/W, the maximum sustainable DC current is ~3.2 A before reaching TJ = 175°C at 25°C ambient - confirmed by Figure 8's "RDS(on)-limited" boundary region.
IRF7341QTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 55V
- Current - Continuous Drain (Id) @ 25°C:
- 5.1A
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 5.1A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 780pF @ 25V
- Power - Max:
- 2.4W
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7341QTRPBF FAQ
1.How can I place an order for IRF7341QTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7341QTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7341QTRPBF reliable?
The price and inventory of IRF7341QTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7341QTRPBF is usually 5 days.
3.What payment methods are accepted for IRF7341QTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7341QTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7341QTRPBF?
IRF7341QTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7341QTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7341QTRPBF?
For technical support, including IRF7341QTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7341QTRPBF requirements.
6.How does Aetrix verify that IRF7341QTRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7341QTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7341QTRPBF meets industry standards.
7.What is the process for return or replacement of IRF7341QTRPBF?
All IRF7341QTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7341QTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7341QTRPBF part is unused and in its original packaging.
Return procedure for IRF7341QTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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