Infineon Technologies IRF7341TRPBF

Overview

IRF7341TRPBF from Infineon Technologies (formerly International Rectifier) is a dual N-channel enhancement-mode power MOSFET in SO-8 package, rated for 55 V V_DS, 4.7 A continuous drain current at 25°C, and 0.050 Ω R_DS(on) at V_GS = 10 V. It integrates two matched silicon dies for synchronous buck, half-bridge, or load-switch applications in DC-DC converters and motor drivers.

For engineers reviewing the IRF7341TRPBF datasheet, IRF7341TRPBF pinout, IRF7341TRPBF application, or IRF7341TRPBF equivalent, key selection criteria include its dual-die thermal coupling in SO-8, fast switching (t_r = 3.2 ns, t_f = 13 ns), low gate charge (Q_g = 24 nC), body diode recovery (t_rr = 60 ns), and JEDEC MS-012AA-compliant leadframe for enhanced PCB thermal dissipation.

Technical Context

This device implements fifth-generation HEXFET® architecture with optimized trench-gate processing to achieve ultra-low on-resistance per unit area. Its dual-die configuration shares a common source connection internally, enabling complementary high-side/low-side operation without external interconnect parasitics.

The SO-8 package uses a customized leadframe with increased copper mass and thermal vias compatibility, supporting >0.8 W power dissipation on standard FR-4 PCBs. The integrated body diodes exhibit controlled reverse recovery (Q_rr = 120 nC, di/dt = −100 A/µs) suitable for hard-switched topologies.

Key Specifications

Pinout & Package

SO-8 package per JEDEC MS-012AA outline; 4.9 × 6.0 mm footprint with exposed thermal pad (not electrically connected); lead-free, RoHS-compliant; compatible with vapor phase, IR, and wave soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with Si7852DP-T1-GE3 and DMN3022LSD-13, IRF7341TRPBF offers the best balance of low R_DS(on), moderate Q_g, and proven SO-8 thermal performance-making it optimal for 4–5 A, 300–600 kHz industrial DC-DC designs requiring long-term supply stability.

Availability

IRF7341TRPBF is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, and industrial digital output modules requiring stable component supply and long-lifecycle support.

Supply support for IRF7341TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's legacy HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-reliability power conversion in consumer, industrial, and computing applications.

FAQ

What is the maximum safe operating temperature for IRF7341TRPBF?

The absolute maximum junction temperature is +150°C, and storage temperature range extends from −55°C to +150°C. Derating begins at 25°C ambient with a linear factor of 0.016 W/°C above 25°C case temperature, limiting continuous power dissipation to 1.3 W at 70°C case temperature per datasheet Figure 11.

Can IRF7341TRPBF be used in avalanche mode?

Yes-it is rated for 72 mJ single-pulse avalanche energy (E_AS) under specified test conditions (I_AS = 4.7 A, L = 6.5 mH, starting T_J = 25°C). This capability supports inductive load switching without external snubbers in non-repetitive fault scenarios, but repetitive avalanche operation is not guaranteed.

Is the SO-8 package thermally enhanced compared to standard SO-8?

Yes-the leadframe is customized with thicker copper and optimized thermal paths, enabling >0.8 W dissipation on standard PCBs. Thermal resistance R_θJA is 62.5°C/W, and the package supports vapor phase, infrared, and wave soldering without delamination or voiding per JEDEC MS-012AA compliance.

How are the two MOSFETs isolated electrically within the SO-8?

The two N-channel MOSFETs share no internal electrical connection except through the PCB. Drain 1 (pins 2,7), Source 1 (pins 1,2,3,4), Gate 1 (pins 1,8) form one channel; Drain 2 (pins 4,5), Source 2 (pins 5,6,7,8), Gate 2 (pins 3,6) form the second. Their sources are separate terminals, allowing independent high-side/low-side or back-to-back configurations.