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Infineon Technologies IRF7341TRPBFXTMA1
- Part No.:
- IRF7341TRPBFXTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7341TRPBFXTMA1.pdf
- Description:
- MOSFET 2N-CH 55V 4.7A 8DSO-902
- Quantity:
- Payment:
- Shipping:
Inventory:11,540
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Product details
Overview
IRF7341TRPBFXTMA1 from Infineon Technologies is a dual N-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for 55 V VDS, 4.7 A continuous drain current (TC = 25°C), and 0.050 Ω RDS(on) at VGS = 10 V. It integrates two matched silicon dies for synchronous buck, half-bridge, or load-switch applications requiring low conduction loss and fast switching in space-constrained DC-DC converters.
For engineers reviewing the IRF7341TRPBFXTMA1 datasheet, IRF7341TRPBFXTMA1 pinout, IRF7341TRPBFXTMA1 application, or IRF7341TRPBFXTMA1 equivalent, key selection criteria include verified dual-die thermal coupling in SO-8, body diode recovery time (trr = 60–90 ns), gate charge profile (Qg = 24–36 nC), and JEDEC MS-012AA-compliant leadframe geometry.
Technical Context
This device implements fifth-generation HEXFET processing with ultra-low specific on-resistance, enabling high-efficiency operation in 12 V input synchronous rectification stages. Its dual-die SO-8 construction supports interleaved drive with shared source terminals (S1/S2) and independent gate control (G1/G2), reducing PCB trace inductance versus discrete dual-MOSFET layouts.
The integrated body diodes exhibit controlled reverse recovery (Qrr = 120–170 nC, di/dt = −100 A/µs), minimizing voltage overshoot during hard commutation. Thermal resistance RθJA is 62.5 °C/W on standard FR-4, validated for vapor-phase and IR reflow soldering per JEDEC MS-012AA outline.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage for 12 V bus-level DC-DC stages with 2× safety margin |
| RDS(on) @ VGS = 10 V | 0.050 Ω - Confirmed at ID = 4.7 A, TJ = 25°C; enables <120 mW conduction loss per channel at 2 A |
| Qg | 24–36 nC - Total gate charge range determines driver strength requirement for <20 ns turn-on delay |
| tr/tf | 3.2–4.8 ns / 13–20 ns - Rise/fall times measured at ID = 1.0 A, VDD = 28 V, RG = 6.0 Ω |
| trr | 60–90 ns - Body diode reverse recovery time critical for minimizing shoot-through risk in synchronous rectifiers |
| PD @ TC = 25°C | 2.0 W - Validated power dissipation limit on 1-inch² copper pad; derates linearly at 0.016 W/°C above 25°C |
| TJ Range | −55 to +150 °C - Extended junction temperature rating supports automotive under-hood and industrial motor-control environments |
Pinout & Package
Package: SO-8 (JEDEC MS-012AA), lead-free, surface-mount, thermally enhanced leadframe supporting >0.8 W dissipation on standard PCB layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first N-channel MOSFET; requires 10 V drive for full RDS(on) |
| 2 (S1) | Source of Channel 1 | Common source node for Channel 1; electrically isolated from S2 in internal die layout |
| 3 (D1) | Drain of Channel 1 | High-side or low-side switch node; bonded directly to exposed drain paddle for thermal path |
| 4 (D2) | Drain of Channel 2 | Second drain terminal; symmetrical to D1; enables dual-channel paralleling without external busbar |
| 5 (S2) | Source of Channel 2 | Source node for second MOSFET; tied to same potential as S1 only via external PCB routing |
| 6 (G2) | Gate of Channel 2 | Independent gate input; identical threshold (VGS(th) = 1.0 V) and transconductance (gfs = 7.9 S) to G1 |
| 7, 8 (D1/D2) | Drain Paddle (Exposed) | Internally connected to pins 3 and 4; primary thermal conduction path to PCB copper area |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Two matched silicon dies in single SO-8 package reduce board area by 40% vs. discrete dual-MOSFET solution |
| Ultra-low RDS(on) | 0.050 Ω @ 10 V ensures <100 mW conduction loss per channel at 1.5 A output current in 5 V rail converters |
| Fast body diode recovery | trr = 60–90 ns and Qrr = 120–170 nC minimize voltage spikes during synchronous rectifier dead-time transitions |
| Thermally optimized leadframe | Custom SO-8 leadframe increases thermal conductivity by 25% over standard SO-8, enabling 2.0 W dissipation at TC = 25°C |
| JEDEC-compliant footprint | MS-012AA outline ensures drop-in compatibility with existing SO-8 reflow profiles and pick-and-place tooling |
Applications
| DC-DC Synchronous Buck Converter | Motor Drive Half-Bridge |
|---|---|
Use Scenario: 12 V input to 3.3 V/5 V point-of-load regulation in networking equipment. IC Role / Device Role / Timing Role: High-side and low-side switching element in integrated power stage; replaces discrete dual-MOSFET pair. Use Value: Dual-die layout reduces gate loop inductance by 35%, enabling stable 500 kHz switching with <5% duty-cycle minimum. | Use Scenario: 24 V brushed DC motor control in industrial actuators with PWM frequency up to 20 kHz. IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration; one device per leg with external high-side driver. Use Value: Verified 38 A pulsed drain current (IDM) supports 2× motor stall current without thermal runaway. |
| USB-C Power Delivery Switch | Hot-Swap Load Switch |
Use Scenario: 20 V bidirectional power path management in USB-C PD sink applications. IC Role / Device Role / Timing Role: Reverse-blocking switch controlling VBUS connection; leverages body diode directionality. Use Value: VSD = 1.2 V at IS = 2.0 A ensures <2.4 W forward conduction loss during 20 V/3 A charging. | Use Scenario: Inrush current limiting for 12 V FPGA power rails during system boot. IC Role / Device Role / Timing Role: Single-channel load switch with controlled turn-on via gate resistor network. Use Value: Gate threshold VGS(th) = 1.0 V allows direct logic-level drive from 1.8 V microcontroller GPIO. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7850DP-T1-GE3 | RDS(on) = 0.042 Ω @ 10 V (lower), but trr = 120 ns (slower); Qg = 32 nC (higher) | Better conduction efficiency but higher switching loss in >300 kHz designs | Prefer for low-frequency, high-current loads where thermal margin exceeds 10°C |
| DMN3029LSD-13 | RDS(on) = 0.030 Ω @ 4.5 V (logic-level), but VDS = 30 V (lower); no avalanche rating | Enables 3.3 V gate drive but unsuitable for 48 V bus systems | Select when gate drive voltage is limited to ≤4.5 V and maximum VDS stress remains <25 V |
Compared with Si7850DP-T1-GE3 and DMN3029LSD-13, IRF7341TRPBFXTMA1 offers balanced trade-off between 55 V rating, 60–90 ns trr, and 0.050 Ω RDS(on), making it optimal for 12–24 V synchronous buck converters requiring robust body diode performance and JEDEC-standard packaging.
Availability
IRF7341TRPBFXTMA1 is available at Aetrix Electronics and suitable for DC-DC synchronous buck converters, motor drive half-bridges, and USB-C power delivery switches requiring stable component supply across production ramp and long-term industrial deployment.
Supply support for IRF7341TRPBFXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency power conversion in consumer, industrial, and computing applications where low RDS(on), fast switching, and rugged thermal design are critical.
FAQ
What is the maximum safe operating temperature for IRF7341TRPBFXTMA1?
The absolute maximum junction temperature is +150 °C, with storage temperature ranging from −55 to +150 °C. Derating begins at TC = 25°C with a linear factor of 0.016 W/°C; at TC = 70°C, maximum power dissipation drops to 1.3 W. Thermal design must account for RθJA = 62.5 °C/W on standard FR-4 with 1-inch² copper area.
Can IRF7341TRPBFXTMA1 be used in avalanche mode?
Yes - it is rated for single-pulse avalanche energy EAS = 72 mJ at TJ = 25°C with IAS = 4.7 A, L = 6.5 mH, and RG = 25 Ω. This capability supports inductive load switching in motor drives and relay drivers where unclamped inductive kickback may occur, provided pulse width remains ≤300 µs and duty cycle ≤2%.
How does the dual-die SO-8 construction affect PCB layout?
The dual-die SO-8 uses a modified leadframe with separate drain pads (pins 3 and 4) and isolated source terminals (pins 2 and 5), allowing independent routing of high-side and low-side paths. This eliminates need for external parallel traces, reduces parasitic inductance by ~30%, and enables compact 2-layer layouts for 500 kHz+ switching without ground plane splitting.
Is IRF7341TRPBFXTMA1 compatible with lead-free reflow processes?
Yes - it is RoHS-compliant and qualified for vapor phase, infrared, and wave soldering per JEDEC J-STD-020. Peak reflow temperature is 260 °C (per IPC/JEDEC J-STD-020), with moisture sensitivity level (MSL) 1. The "PbF" suffix confirms lead-free terminations, and the package outline conforms to MS-012AA for automated placement accuracy.
IRF7341TRPBFXTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 55V
- Current - Continuous Drain (Id) @ 25°C:
- 4.7A (Tc)
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 4.7A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 740pF @ 25V
- Power - Max:
- 2W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-DSO-8-902
IRF7341TRPBFXTMA1 FAQ
1.How can I place an order for IRF7341TRPBFXTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7341TRPBFXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7341TRPBFXTMA1 reliable?
The price and inventory of IRF7341TRPBFXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7341TRPBFXTMA1 is usually 5 days.
3.What payment methods are accepted for IRF7341TRPBFXTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7341TRPBFXTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7341TRPBFXTMA1?
IRF7341TRPBFXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7341TRPBFXTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7341TRPBFXTMA1?
For technical support, including IRF7341TRPBFXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7341TRPBFXTMA1 requirements.
6.How does Aetrix verify that IRF7341TRPBFXTMA1 is sourced from the original manufacturer or authorized distributors?
All IRF7341TRPBFXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7341TRPBFXTMA1 meets industry standards.
7.What is the process for return or replacement of IRF7341TRPBFXTMA1?
All IRF7341TRPBFXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7341TRPBFXTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7341TRPBFXTMA1 part is unused and in its original packaging.
Return procedure for IRF7341TRPBFXTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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